Substrate temperature non-uniformity reduction over target life using spacing compensation

1. A method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber, comprising:

performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each independently controlled as a function of the life of the sputtering target, wherein a change of the substrate-to-target distance is less than a change of the support-to-target distance over the life of the sputtering target.

2. The method of claim 1 , wherein at least one of:

a first substrate-to-target distance at a first point in the life of the sputtering target is about 600 mm to about 610 mm, or

a first support-to-target distance at a first point in the life of the sputtering target is about 660 mm to about 680 mm.

3. The method of claim 1 , wherein the corresponding series of substrates are elevated with respect to a substrate support when performing the series of reflow processes.

4. The method of claim 1 , wherein each substrate of the series of substrates is positioned at a substrate-to-target distance that is constant during a given reflow process, and wherein a substrate support is positioned at a support-to-target distance that is constant during the given reflow process.

5. The method of claim 1 , wherein each substrate of the series of substrates is positioned at a substrate-to-target distance that varies during a given reflow process, and wherein a substrate support is positioned at a support-to-target distance that varies during the given reflow process.

6. The method of claim 1 , wherein the life of the sputtering target is about 2000 to about 3000 kilowatt-hours (kWhr).

7. The method of claim 1 , wherein at least one of:

the substrate-to-target distance is controlled to change about 0.002 mm to about 0.004 mm per every kilowatt-hour (kWhr) of the life of the sputtering target, or

the support-to-target distance is controlled to change about 0.002 mm to about 0.006 mm per every kilowatt-hour (kWhr) of the life of the sputtering target.

8. The method of claim 1 , wherein the substrate-to-target distance and the support-to-target distance are controlled to change at a linear rate over the life of the sputtering target.

9. The method of claim 1 , wherein the substrate-to-target distance and the support-to-target distance are controlled to change at a non-linear rate over the life of the sputtering target.

10. A non-transitory computer readable medium having instructions stored thereon that, when executed by a processor, perform the method of claim 1 .

11. The computer readable medium of claim 10 , wherein at least one of:

a first substrate-to-target distance at a first point in the life of the sputtering target is about 600 mm to about 610 mm, or

a first support-to-target distance at a first point in the life of the sputtering target is about 660 mm to about 680 mm.

12. The computer readable medium of claim 10 , wherein each substrate of the series of substrates is positioned at a substrate-to-target distance that is constant during a given reflow process, and wherein a substrate support is positioned at a support-to-target distance that is constant during the given reflow process.

13. The computer readable medium of claim 10 , wherein each substrate of the series of substrates is positioned at a substrate-to-target distance that varies during a given reflow process, and wherein a substrate support is positioned at a support-to-target distance that varies during the given reflow process.

14. A method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber, comprising:

while a sputtering target in the PVD chamber is at a first point in a life of the sputtering target, performing a reflow process on a first substrate disposed on a substrate support while the substrate is positioned at a first substrate-to-target distance in the PVD chamber and while the substrate support is at a first support-to-target distance; and

while the sputtering target in the PVD chamber is at a subsequent second point in the life of the sputtering target, performing a reflow process on a second substrate while the substrate is positioned at a second substrate-to-target distance in the PVD chamber, different than the first substrate-to-target distance, and while the substrate support supporting the second substrate is at a second support-to-target distance, different than the first support-to-target distance, wherein a change between the first substrate-to-target distance and the second substrate-to-target distance and a change between the first support-to-target distance and the second support-to-target distance are both independently controlled as a function of the life of the sputtering target, and wherein a change of the substrate-to-target distance is less than a change of the support-to-target distance over the life of the sputtering target.

15. The method of claim 14 , wherein the reflow process on the first substrate and the reflow process on the second substrate are performed using one or more lamps disposed below the first substrate and the second substrate.

16. The method of claim 14 , wherein the first substrate and the second substrate are elevated via lift pins over the substrate support when performing the reflow process on the first substrate and the second substrate.

17. The method of claim 14 , wherein the reflow process on the first substrate and the reflow process on the second substrate comprise reflow processes of cobalt (Co), copper (Cu), or aluminum (Al), alloys thereof, or combinations thereof.

18. The method of claim 14 , wherein the second substrate-to-target distance is less than the first substrate-to-target distance, and the second support-to-target distance is less than the first support-to-target distance.