Substrate processing apparatus, non-transitory computer-readable recording medium, method of manufacturing semiconductor device, and a substrate processing method
Described herein is a technique capable of capable of uniformly processing a surface of a substrate even when an inductive coupling type substrate processing apparatus is used. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supply part configured to supply a gas into the process chamber; a high frequency power supply part configured to supply a high frequency power; a plasma generator including a resonance coil wound on a side of the process chamber, the plasma generator configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil; and a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil.
1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a gas supply part configured to supply a gas into the process chamber;
a high frequency power supply part configured to supply a high frequency power of a predetermined frequency;
a plasma generator comprising:
a resonance coil comprising a first resonance coil and a second resonance coil that are wound on a side of the process chamber; and
a movable tap provided at least one end of the first resonance coil and the second resonance coil,
wherein the plasma generator is configured to generate a plasma in the process chamber when the high frequency power is supplied to the resonance coil;
a plasma generation space provided adjacent to the resonance coil; and
a substrate support on which the substrate is placed such that a horizontal center position of the substrate in the process chamber does not overlap with a horizontal center position of the resonance coil,
wherein, while the plasma generator generates the plasma, the substrate rotates or revolves at a location below the plasma generation space and a relative position of the movable tap with respect to a specific point on an outer peripheral portion of the substrate is changed.
2. The substrate processing apparatus of claim 1 , the first resonance coil and the second resonance coil are provided such that a horizontal center position of the first resonance coil does not overlap with a horizontal center position of the second resonance coil.
3. The substrate processing apparatus of claim 1 , wherein the plasma generation space is formed in the process chamber, and
the substrate support is provided in a substrate processing space below the plasma generation space.
4. The substrate processing apparatus of claim 1 , wherein a winding pitch of the first resonance coil is at equal intervals.
5. The substrate processing apparatus of claim 1 , wherein a diameter of the first resonance coil is set to be greater than a diameter of the substrate.
6. The substrate processing apparatus of claim 1 , wherein a winding pitch of the second resonance coil is at equal intervals.
7. The substrate processing apparatus of claim 1 , wherein a diameter of the second resonance coil is set to be greater than a diameter of the substrate.
8. A non-transitory computer-readable recording medium storing a program that causes, by a computer, the substrate processing apparatus of claim 1 to process the substrate.
9. A method of manufacturing a semiconductor device using the substrate processing apparatus of claim 1 , the method comprising: processing the substrate.
10. A substrate processing method using the substrate processing apparatus of claim 1 , the method comprising: processing the substrate.