Integrated epitaxial metal electrodes
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.
1. A layered structure, comprising:
a monolithic crystalline substrate having a continuous portion and a porous portion;
a first epitaxial metal layer over the monolithic crystalline substrate; and
a first semiconductor layer over the first epitaxial metal layer,
wherein the monolithic crystalline substrate includes one or more materials from a group of silicon (Si), germanium (Ge), silicon on insulator (SOI), silicon carbide (SiC), and SiGe, and
wherein the first epitaxial metal layer is an elemental metal from a group of ruthenium (Ru), molybdenum (Mo), platinum (Pt), copper (Cu), aluminum (Al), neodymium (Nd), gadolinium (Gd), erbium (Er), ytterbium (Yb), and scandium (Sc).
2. The layered structure of claim 1 , wherein the monolithic crystalline substrate comprises a transition layer composed of continuous material between the porous portion and a first layer that is directly over the monolithic crystalline substrate.
3. The layered structure of claim 1 , wherein the porous portion borders a layer that is directly over the monolithic crystalline substrate without any transition layer in between.
4. The layered structure of claim 1 , wherein the first epitaxial metal layer is directly over the monolithic crystalline substrate, and wherein the first epitaxial metal layer is in direct contact with the porous portion of the monolithic crystalline substrate.
5. The layered structure of claim 1 , wherein the porous portion has at least a first region and a second region that are distributed at different locations horizontally or vertically, and wherein the first region and the second region have different porosities.
6. The layered structure of claim 1 , further comprising:
a first rare earth oxide layer between the monolithic crystalline substrate and the first metal layer.
7. The layered structure of claim 6 , wherein the first metal layer covers a portion of an upper surface of the first rare earth oxide layer, and wherein the first metal layer aligns with the porous portion of the monolithic crystalline substrate with the first rare earth oxide layer in between.
8. The layered structure of claim 1 , further comprising:
a second semiconductor layer over the first semiconductor layer; and
a second metal layer over the second semiconductor layer.
9. The layered structure of claim 1 , further comprising:
a non-continuous rare earth oxide layer over the monolithic crystalline substrate, wherein the non-continuous rare earth oxide layer has regions filled with a rare earth oxide and at least one other region among other portions of the non-continuous rare earth oxide layer.
10. The layered structure of claim 9 , wherein the first epitaxial metal layer is filled within the at least one other region.
11. The layered structure of claim 10 , wherein the first semiconductor layer is over the at least one other region filled with the first epitaxial metal layer and the other portions of the non-continuous rare earth oxide layer, and the layered structure further comprises a second semiconductor layer over the first semiconductor layer.
12. The layered structured of claim 9 , wherein the first semiconductor layer is located within the at least one other region and over the first metal epitaxial layer, and the layered structure further comprises a second semiconductor layer over the at least one other region filled with the first semiconductor layer on top of the first epitaxial metal layer, and the other portions of the non-continuous rare earth oxide layer.
13. The layered structure of claim 10 , wherein the porous portion of the monolithic crystalline substrate aligns with the first metal layer.
14. The layered structure of claim 1 , further comprising:
a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer over the second semiconductor layer.
15. The layered structure of claim 14 , wherein an interface between the first semiconductor and the second semiconductor, or between the second semiconductor layer and third semiconductor layer, includes a first rare earth oxide sublayer.
16. The layered structure of claim 15 , wherein the interface further includes an epitaxial metal layer over the first rare earth oxide layer.
17. The layered structure of claim 16 , wherein the interface further includes a second rare earth oxide layer over the epitaxial metal layer.
18. The layered structure of claim 14 , wherein an interface between the first semiconductor and the second semiconductor, or between the second semiconductor layer and third semiconductor layer includes an epitaxial metal layer.
19. The layered structure of claim 14 , wherein the first semiconductor layer and the second semiconductor layer jointly form a first device layer, and wherein the second semiconductor layer and the third semiconductor layer jointly form a second device layer.
20. The layered structure of claim 9 , wherein the at least one other region is empty.