Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.
1. A cyclic deposition process for depositing an intermetallic compound, the cyclic deposition method comprising the steps of:
providing a first gas-phase reactant comprising a first metal from a first gas-phase reactant source vessel to a reaction chamber to react with a surface of a substrate to form a first metal species; and
providing a second gas-phase reactant comprising a second metal to the reaction chamber to react with the first metal species to thereby form the intermetallic compound,
wherein the first gas-phase reactant comprises a transition metal and bidentate nitrogen containing adduct forming ligand, and
wherein the second gas-phase reactant comprises a metal-containing organic compound.
2. The cyclic deposition process of claim 1 , wherein the transition metal comprises a group 8-11 metal.
3. The cyclic deposition process of claim 1 , wherein the second gas-phase reactant is selected from the group consisting of compounds having formula of R-M-H wherein R is an organic group and M is a metal.
4. The cyclic deposition process of claim 3 , wherein the group consisting of compounds having formula of R-M-H have formula of R (X-n) -M X -H n , wherein X is the formal oxidation state of the metal and n is 1 to 5.
5. The cyclic deposition process of claim 3 , wherein R is independently selected from the group consisting of C1-C5 alkyl groups.
6. The cyclic deposition process of claim 3 , wherein R is cyclopentadienyl, amido, alkoxy, amidinato, guanidinato, imido, carboxylato, β-diketonato, β-ketoiminato, malonato, β-diketiminato group with or without additional donor functionalities.
7. The cyclic deposition process of claim 1 , wherein the second metal is selected from the group consisting of Sn, In, Al, Ga, Ge, As, Sb, Pb and Bi.
8. The cyclic deposition process of claim 1 , wherein the second gas-phase reactant comprises a metallic reducing agent.
9. The cyclic deposition process of claim 1 , wherein the first gas-phase reactant comprises a diamine adduct of a corresponding metal chloride.
10. The cyclic deposition process of claim 1 , wherein the first gas-phase reactant comprises a metal halide compound comprising the bidentate nitrogen containing adduct ligand.
11. The cyclic deposition process of claim 1 , wherein the first gas-phase reactant comprises at least one of cobalt chloride (TMEDA) and nickel chloride (TMPDA).
12. The cyclic deposition process of claim 1 , wherein the second gas-phase reactant comprises TBTH.
13. A cyclic deposition process for forming a metal-containing material, the cyclic deposition process comprising:
providing a first gas-phase precursor comprising a first metal to a reaction chamber from a first gas-phase reactant source vessel to form a first metal species; and
providing a second gas-phase reactant comprising a compound having a general formula of R-M-H, wherein R is an organic group and M is a metal to react with the first metal species to thereby form the metal-containing material,
wherein a temperature within the reaction chamber is greater than 0° C. and less than 600° C.,
wherein the first gas-phase precursor comprises a metal halide compound comprising a bidentate nitrogen containing adduct ligand, and
wherein the first metal comprises a transition metal.
14. The cyclic deposition process of claim 13 , wherein the metal-containing material comprises elemental metal.
15. The cyclic deposition process of claim 13 , wherein the second metal is selected from the group consisting of Sn, In, Ga, Al, Ge, As, Sb, Pb and Bi.
16. The cyclic deposition process of claim 13 , wherein the compound having a general formula of R-M-H has formula of R (X-n) -M X -H n , wherein X is the formal oxidation state of the metal and n is 1 to 5.
17. The cyclic deposition process of claim 13 , wherein the first gas-phase reactant comprises a diamine adduct of a corresponding metal chloride.
18. The cyclic deposition process of claim 13 , wherein the first gas-phase reactant comprises at least one of cobalt chloride (TMEDA) and nickel chloride (TMPDA).
19. The cyclic deposition process of claim 13 , wherein the second gas-phase reactant comprises TBTH.