Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.
1. A method of depositing a transition metal aluminum carbide film on a substrate within a reaction chamber by a cyclical deposition process, the method comprising;
contacting the substrate with a first vapor phase reactant;
purging the reaction chamber with a first main purge;
contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises:
contacting the substrate with a micro pulse of a second vapor phase reactant; and
purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a concentration of the second vapor phase reactant into the reaction chamber; and
purging the reaction chamber with a second main purge,
wherein the two or more micro pulsing processes provide a uniform dose of the second vapor phase reactant to a reaction chamber, and
wherein the transition metal aluminum carbide film comprises greater than 50 atomic % aluminum.
2. The method of claim 1 , wherein the cyclical deposition process comprises an atomic layer deposition process.
3. The method of claim 1 , wherein the cyclical deposition process comprises a cyclical chemical vapor deposition process.
4. The method of claim 1 , wherein the first vapor phase reactant comprises one or more metal vapor phase reactants.
5. The method of claim 4 , wherein the one or more metal vapor phase reactants comprises at least one transition metal selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), and tungsten (W).
6. The method of claim 4 , wherein the one or metal vapor phase reactants comprises at least one of a transition metal chloride, a transition metal bromide, a transition metal iodide, or a transition metal fluoride.
7. The method of claim 1 , wherein the second vapor phase reactant comprises a metalorganic precursor.
8. The method of claim 7 , wherein the metalorganic precursor comprises at least one of trimethylaluminum (TMA), triethylaluminum (TEA), dimethylaluminumhydride (DMAH), or tritertbutylaluminum (TTBA).
9. The method of claim 1 , wherein each micro pulse of the second vapor phase reactant has a pulse time period of less than 2 seconds.
10. The method of claim 1 , wherein each micro purge has a purge time period of between 0.1 seconds and 10 seconds.
11. The method of claim 1 , wherein a thickness of the transition metal aluminum carbide is less than 20 nm.
12. The method of claim 11 , wherein the first vapor phase reactant comprises a transition metal reactant and the second vapor phase reactant comprises a metalorganic reactant.
13. The method of claim 12 , wherein a transition metal in the transition metal aluminum carbide film is selected from the group consisting of zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), and tungsten (W).
14. The method of claim 12 , wherein a step coverage of the transition metal aluminum carbide film is greater than 90%.
15. The method of claim 1 , wherein the transition metal aluminum carbide film forms a work function film of a gate electrode of a transistor gate structure.
16. The method of claim 1 , further comprising replenishing the concentration of the second vapor source at the source vessel to a concentration during each micro purge.
17. A device structure including a work function film deposited by the method of claim 1 .
18. A reaction system configured to perform the method of claim 1 .