IP Library › Granted Patent US 11,502,287
Granted Patent B2
US 11,502,287 · App. 16/131,884 · Granted Nov 15, 2022

Method of manufacturing an electrochemical cell

Inventors: Fang Dai (Troy, MI); Shuru Chen (Troy, MI); Meinan He (Sterling Heights, MI); Mei Cai (Bloomfield Hills, MI)
Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
H01M4/1395H01M4/0404H01M4/0419H01M4/0421H01M4/0452H01M4/0483H01M4/134H01M4/366H01M4/382H01M4/5815H01M4/661H01M4/667H01M4/742H01M4/747H01M4/80H01M10/052H01M10/0525H01M10/0585
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Quick Facts
Patent No.
US 11,502,287
App. No.
16/131,884
Granted
Nov 15, 2022
Kind
B2
Abstract

In a method of manufacturing an electrochemical cell, a porous or non-porous metal substrate may be provided. A precursor solution may be applied to a surface of the metal substrate. The precursor solution may comprise a chalcogen donor compound dissolved in a solvent. The precursor solution may be applied to the surface of the metal substrate such that the chalcogen donor compound reacts with the metal substrate and forms a conformal metal chalcogenide layer on the surface of the metal substrate. A conformal lithium metal layer may be formed on the surface of the metal substrate over the metal chalcogenide layer.

Claims (23)

1. A method of manufacturing an electrochemical cell, the method comprising:

providing a porous or non-porous metal substrate;

providing a precursor solution including a chalcogen donor compound dissolved in a solvent;

applying the precursor solution to a surface of the metal substrate such that the chalcogen donor compound reacts with the metal substrate and forms a conformal metal chalcogenide layer directly on the surface of the metal substrate; and

forming a conformal lithium metal layer directly on the metal chalcogenide layer over the surface of the metal substrate,

wherein the conformal metal chalcogenide layer is an intermediate layer that extends continuously between the surface of the metal substrate and the conformal lithium metal layer.

2. The method of claim 1 wherein the chalcogen donor compound comprises an oxygen donor compound, and wherein the conformal metal chalcogenide layer comprises a metal oxide.

3. The method of claim 2 wherein the oxygen donor compound comprises at least one of a metal oxo complex, a nitroxide, a phosphine oxide, a peroxide, a superoxide, or a metal salt including an oxyanion.

4. The method of claim 2 wherein the oxygen donor compound comprises at least one of sodium hypochlorite, (2,2,6,6-tetramethylpiperidin-1-yl)oxyl, triphenylphosphine oxide, benzoyl peroxide, or potassium dichromate.

5. The method of claim 1 wherein the chalcogen donor compound comprises a sulfur donor compound, and wherein the conformal metal chalcogenide layer comprises a metal sulfide.

6. The method of claim 5 wherein the sulfur donor compound comprises at least one of 2,2,6,6-tetramethylpiperidin-1-ylthiyl (TEMPS), an organic polysulfide, or an inorganic polysulfide.

7. The method of claim 1 wherein the chalcogen donor compound comprises a selenium donor compound, and wherein the conformal metal chalcogenide layer comprises a metal selenide.

8. The method of claim 7 wherein the selenium donor compound comprises at least one of an organic polyselenide or an inorganic polyselenide.

9. The method of claim 1 wherein the precursor solution is applied to the surface of the metal substrate by spraying or coating the precursor solution onto the surface of the metal substrate, or by at least partially immersing the metal substrate in the precursor solution.

10. The method of claim 1 wherein the metal chalcogenide layer is substantially uniform, and wherein the metal chalcogenide layer has a thickness in the range of one nanometer to 10 micrometers.

11. The method of claim 1 wherein the metal substrate comprises a non-porous metal foil, a perforated metal sheet, or a porous metal mesh.

12. The method of claim 11 wherein the metal substrate has a thickness in the range of 8 μm 20 μm.

13. The method of claim 1 wherein the metal substrate is porous and includes a first side, an opposite second side, and a plurality of pores defined by wall surfaces extending between the first and second sides of the metal substrate, and wherein the precursor solution is applied to the metal substrate such that the metal chalcogenide layer forms on the first and second sides of the metal substrate and on the wall surfaces extending between the first and second sides of the metal substrate, without blocking the pores of the metal substrate.

14. The method of claim 13 wherein the metal substrate has a thickness in the range of 50 μm to 150 μm.

15. The method of claim 1 wherein the metal substrate comprises copper, and wherein the metal chalcogenide layer comprises copper oxide, copper sulfide, copper selenide, or a combination thereof.

16. The method of claim 1 wherein the lithium metal layer is formed on the surface of the metal substrate over the metal chalcogenide layer by contacting the metal chalcogenide layer with a source of gaseous or molten lithium such that the lithium actively wets the metal chalcogenide layer and is uniformly and continuously distributed over the surface of the metal substrate.

17. The method of claim 1 wherein the lithium metal layer is formed on the surface of the metal substrate over the metal chalcogenide layer using an electrochemical deposition process, wherein the metal substrate is at least partially immersed in a nonaqueous liquid electrolyte solution including a lithium salt dissolved in a polar aprotic organic solvent, and then establishing an electrical potential between the metal substrate and a counter electrode immersed in the nonaqueous liquid electrolyte solution such that lithium ions in the electrolyte solution are reduced to metallic lithium and deposited on the surface of the metal substrate over the metal chalcogenide layer.

18. The method of claim 1 wherein the conformal lithium metal layer consists essentially of lithium and comprises, by weight, greater than 97% lithium.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2018
From: DAI, FANG; CHEN, SHURU; HE, MEINAN; CAI, MEI
To: GM GLOBAL TECHNOLOGY OPERATIONS LLC
Reel/Frame 046886/0111 →
Continuity (2)
Continuation In Part 15862187 · Jan 4, 2018
Related Publication 20190207208A1 · Jul 4, 2019
Cited By (1)
US 12,506,138