Method of forming structures including a vanadium or indium layer
Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.
1. A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor; and
using a cyclical deposition process, depositing a layer comprising one or more of vanadium and indium onto a surface of the substrate,
wherein the cyclical deposition process:
comprises:
continually flowing one or more of a vanadium precursor and an indium precursor to the reaction chamber; and
while continually flowing the one or more of the vanadium precursor and the indium precursor, periodically pulsing one or more of an oxygen reactant, a nitrogen reactant, a sulfur reactant, and a carbon reactant to the reaction chamber.
2. The method of claim 1 , wherein the vanadium precursor comprises one or more of a vanadium halide and a vanadium oxyhalide.
3. The method of claim 1 , wherein the indium precursor comprises one or more of an indium alkyl compound, an indium cyclopentadienyl compound, and an indium beta-diketonate compound.
4. The method of claim 1 , wherein the structure comprises a threshold voltage tuning layer comprising the layer comprising one or more of vanadium and indium.
5. The method of claim 1 , wherein the structure comprises a p-dipole shifter layer comprising the layer comprising one or more of vanadium and indium.
6. The method of claim 1 , wherein the structure comprises a gate all around structure.
7. The method of claim 6 , wherein the gate all around structure includes a high-k dielectric layer.
8. The method of claim 1 , wherein the cyclical deposition process comprises a cyclical chemical vapor deposition process.
9. The method of claim 1 , wherein the cyclical deposition process comprises a thermal process.
10. The method of claim 1 , wherein a thickness of the layer comprising the one or more of the vanadium and the indium is between about 0.1 nm and about 5 nm.
11. The method of claim 1 , wherein:
the one or more of the vanadium precursor and the indium precursor comprises a halide; and
the step of periodically pulsing one or more of the oxygen reactant, the nitrogen reactant, the sulfur reactant, and the carbon reactant to the reaction chamber comprises periodically pulsing the oxygen reactant.
12. The method of claim 1 , wherein the vanadium precursor comprises a beta-diketonate compound.
13. The method of claim 1 , wherein the reactant comprises the oxygen reactant.
14. The method of claim 1 , wherein the structure comprises a barrier layer comprising the layer comprising the one or more of the vanadium and the indium.
15. The method of claim 1 , wherein the structure comprises an etch stop layer comprising the layer comprising the one or more of the vanadium and the indium.