Layer deposition with post-deposition agglomeration mitigation
A method can comprise providing a zinc precursor to a reaction chamber comprising a substrate disposed therein; providing an oxygen species to the reaction chamber; forming a zinc oxide layer on the substrate in response to providing the zinc precursor and providing the oxygen species; and/or mitigating agglomeration of the zinc oxide layer. Mitigating agglomeration of the zinc oxide layer can comprise forming a capping layer on an outer surface of the zinc oxide layer such that the outer surface of the zinc oxide layer is not exposed to ambient oxygen, doping the zinc oxide layer with another material, and/or applying a post-deposition treatment to the zinc oxide layer.
1 . A method, comprising:
providing a zinc precursor to a reaction chamber comprising a substrate disposed therein;
providing an oxygen species to the reaction chamber;
forming a zinc oxide layer on the substrate in response to the providing the zinc precursor and the providing the oxygen species; and
mitigating agglomeration of the zinc oxide layer comprising forming a capping layer directly on an outer surface of the zinc oxide layer such that the outer surface of the zinc oxide layer is not exposed to ambient oxygen.
2 . The method of claim 1 , wherein the zinc precursor comprises diethylzinc.
3 . The method of claim 2 , wherein the oxygen species comprises at least one of water or ozone.
4 . The method of claim 1 , further comprising providing a first purge gas to the reaction chamber after the providing the zinc precursor and before the providing the oxygen species to the reaction chamber.
5 . The method of claim 4 , further comprising providing a second purge gas to the reaction chamber after the providing the oxygen species.
6 . The method of claim 1 , wherein the forming the capping layer comprises:
providing an aluminum precursor to the reaction chamber;
providing a second oxygen species to the reaction chamber; and
forming an aluminum oxide layer directly on the outer surface of the zinc oxide layer, wherein the aluminum oxide layer is the capping layer.
7 . The method of claim 6 , wherein the aluminum precursor comprises trimethylaluminum, and wherein the second oxygen species comprises at least one of water or ozone.
8 . The method of claim 6 , wherein a deposition cycle comprises the providing the zinc precursor, the providing the oxygen species, the forming the zinc oxide layer, and the forming the capping layer, wherein the deposition cycle is performed a number of times, forming a zinc oxide structure.
9 . The method of claim 8 , wherein the zinc oxide structure comprises between 10% and 40% by weight aluminum oxide.
10 . The method of claim 1 , wherein the forming the capping layer comprises:
providing a gallium precursor to the reaction chamber;
providing a second oxygen species to the reaction chamber; and
forming a gallium oxide layer directly on the outer surface of the zinc oxide layer, wherein the gallium oxide layer is the capping layer.
11 . The method of claim 1 , wherein the forming the capping layer comprises:
providing a niobium precursor to the reaction chamber;
providing a second oxygen species to the reaction chamber; and
forming a niobium oxide layer directly on the outer surface of the zinc oxide layer, wherein the niobium oxide layer is the capping layer.
12 . A method, comprising:
providing a substrate into a reaction chamber;
providing a zinc precursor to the reaction chamber;
providing an oxygen species to the reaction chamber;
forming a zinc oxide layer on the substrate in response to the providing the zinc precursor and the providing the oxygen species; and
forming a capping layer on the zinc oxide layer such that the zinc oxide layer is sealed from exposure to ambient oxygen.
13 . The method of claim 12 , wherein the zinc precursor comprises diethylzinc, and wherein the oxygen species comprises at least one of water or ozone.
14 . The method of claim 12 , further comprising providing a first purge gas to the reaction chamber after the providing the zinc precursor and before the providing the oxygen species to the reaction chamber.
15 . The method of claim 12 , wherein the capping layer encapsulates an outer surface and side surfaces of the zinc oxide layer such that the zinc oxide layer is sealed from exposure to ambient oxygen.
16 . The method of claim 12 , wherein the forming the capping layer comprises:
providing an aluminum precursor to the reaction chamber;
providing a second oxygen species to the reaction chamber; and
forming an aluminum oxide layer on the zinc oxide layer, wherein the aluminum oxide layer is the capping layer.
17 . The method of claim 12 , wherein the forming the capping layer comprises:
providing a titanium precursor to the reaction chamber;
providing a nitrogen species to the reaction chamber; and
forming a titanium nitride layer on the zinc oxide layer, wherein the titanium nitride layer is the capping layer.
18 . A method, comprising:
providing a substrate into a first reaction chamber;
providing a zinc precursor to the first reaction chamber;
providing an oxygen species to the first reaction chamber;
forming a zinc oxide layer on the substrate in response to the providing the zinc precursor and the providing the oxygen species;
transferring the substrate to a second reaction chamber; and
forming a capping layer on the zinc oxide layer in the second reaction chamber, such that the zinc oxide layer is sealed from exposure to ambient oxygen.
19 . The method of claim 18 , wherein the forming the capping layer comprises:
providing a titanium precursor to the reaction chamber;
providing a nitrogen species to the reaction chamber; and
forming a titanium nitride layer on the zinc oxide layer, wherein the titanium nitride layer is the capping layer.
20 . The method of claim 19 , wherein the titanium precursor comprises titanium carbonate, and wherein the nitrogen species comprises ammonia.