Composite bridge die-to-die interconnects for integrated-circuit packages
Disclosed embodiments include composite-bridge die-to-die interconnects that are on a die side of an integrated-circuit package substrate and that contacts two IC dice and a passive device that is in a molding material, where the molding material also contacts the two IC dice.
1. An integrated-circuit apparatus, comprising:
a first integrated-circuit (IC) die;
a subsequent IC die;
a composite-bridge die-to-die interconnect contacting composite-bridge bond pads on each of the first and subsequent IC dice, and wherein the composite-bridge die-to-die interconnect exposes package-connect bond pads on each of the first and subsequent IC dice;
a passive device located laterally between the first and subsequent IC dice, and contacting the composite-bridge die-to-die interconnect; and
a molding material that contacts the first and subsequent IC dice, the passive device and the composite-bridge die-to-die interconnect.
2. The integrated-circuit apparatus of claim 1 , further including:
a first lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the first IC die and to the passive device; and
a subsequent lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the subsequent IC die and to the passive device.
3. The integrated-circuit apparatus of claim 1 , further including a die-to-die trace in the composite-bridge die-to-die interconnect, that bypasses the passive device and couples the first and subsequent IC dice.
4. The integrated-circuit apparatus of claim 1 , further including a conductive shield in the composite-bridge die-to-die interconnect, wherein the conductive shield projects a footprint onto the composite-bridge bond pads, and onto the passive device.
5. The integrated-circuit apparatus of claim 1 , further including:
a first lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the first IC die and to the passive device;
a subsequent lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the subsequent IC die and to the passive device; and
a die-to-die trace in the composite-bridge die-to-die interconnect, that bypasses the passive device and couples the first and subsequent IC dice.
6. The integrated-circuit apparatus of claim 1 , further including:
a first lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the first IC die and to the passive device;
a subsequent lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the subsequent IC die and to the passive device; and
a conductive shield in the composite-bridge die-to-die interconnect, wherein the conductive shield projects a footprint onto the composite-bridge bond pads, and onto the passive device.
7. The integrated-circuit apparatus of claim 1 , further including:
a first lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the first IC die and to the passive device;
a subsequent lateral interconnect in the composite-bridge die-to-die interconnect, that couples to the subsequent IC die and to the passive device;
a die-to-die trace in the composite-bridge die-to-die interconnect, that bypasses the passive device and couples the first and subsequent IC dice; and
a conductive shield in the composite-bridge die-to-die interconnect, wherein the conductive shield projects a footprint onto the composite-bridge bond pads, and onto the passive device.
8. The integrated-circuit apparatus of claim 1 , further including:
an integrated-circuit package substrate; and
package-connect electrical bumps contacting the package-connect bond pads, wherein the electrical bumps are on the integrated-circuit package substrate at a die side.
9. The integrated-circuit apparatus of claim 1 , further including:
an integrated-circuit package substrate;
package-connect electrical bumps contacting the package-connect bond pads, wherein the electrical bumps are on the integrated-circuit package substrate at a die side; and
wherein the composite-bridge die-to-die interconnect is also on the die side.
10. The integrated-circuit apparatus of claim 1 , wherein the passive device is an embedded passive device, further including:
an integrated-circuit package substrate including a die side and a land side;
package-connect electrical bumps contacting the package-connect bond pads, wherein the electrical bumps are on the integrated-circuit package substrate at the die side; and
a bottom passive device on the land side, wherein the bottom passive device is coupled to at least one of the first and subsequent IC dice.
11. An integrated-circuit package apparatus, comprising:
an integrated-circuit package substrate including a die side and a land side;
a first integrated-circuit (IC) die on the die side;
a subsequent IC die on the die side;
a composite-bridge die-to-die interconnect contacting composite-bridge bond pads on each of the first and subsequent IC dice, and wherein the composite-bridge die-to-die interconnect exposes package-connect bond pads on each of the first and subsequent IC dice;
package-connect bond pads contacting the first and subsequent IC dice at the die side;
a passive device located laterally between the first and subsequent IC dice, and coupled to the composite-bridge die-to-die interconnect; and
a molding material that contacts the first and subsequent IC dice, the passive device and the composite-bridge die-to-die interconnect.
12. The integrated-circuit package apparatus of claim 11 , wherein the passive device contacts the composite-bridge die-to-die interconnect.
13. The integrated-circuit package apparatus of claim 11 , further including at least one chiplet on the first IC die, and coupled to the first IC die by a through-silicon via.
14. The integrated-circuit package apparatus of claim 11 , further including:
at least one chiplet on the first IC die, and coupled to the first IC die by a through-silicon via; and
at least one chiplet on the subsequent IC die, and coupled to the subsequent IC die by a through-silicon via.
15. The integrated-circuit package apparatus of claim 11 , wherein the passive device is a first passive device, further including a subsequent passive device between the first and subsequent IC dice and in the molding material, wherein the subsequent passive device contacts the composite-bridge die-to-die interconnect.
16. The integrated-circuit package apparatus of claim 11 , wherein the passive device is a first passive device, further including a first inner passive device below the first passive device and in the molding material, wherein the first inner passive device contacts the composite-bridge die-to-die interconnect.
17. The integrated-circuit package apparatus of claim 11 , wherein the passive device is a first passive device, further including:
a first inner passive device below the first passive device and in the molding material, wherein the first inner passive device contacts the composite-bridge die-to-die interconnect;
a subsequent passive device between the first and subsequent IC dice and in the molding material, wherein the subsequent passive device contacts the composite-bridge die-to-die interconnect; and
a subsequent inner passive device below the subsequent passive device and in the molding material, wherein the subsequent inner passive device contacts the composite-bridge die-to-die interconnect.
18. The integrated-circuit package apparatus of claim 11 , wherein the passive device is a first passive device, further including:
a subsequent passive device between the first and subsequent IC dice and in the molding material, wherein the subsequent passive device contacts the composite-bridge die-to-die interconnect;
a third IC die on the die side, adjacent each of the first and subsequent IC dice;
a fourth IC die on the die side, adjacent each of the first and subsequent IC dice; and
a third passive device between the first and fourth IC dice and in the molding material, wherein the third passive device contacts the composite-bridge die-to-die interconnect.
19. The integrated-circuit package apparatus of claim 11 , wherein the passive device is a first upper passive device, further including a first lower passive device below and contacting the first upper passive device and in the molding material, wherein the first lower passive device contacts the composite-bridge die-to-die interconnect.
20. The integrated-circuit package apparatus of claim 11 , further including:
a printed wiring board coupled to the land side; and
a chipset coupled to the printed wiring board.
21. The integrated-circuit package apparatus of claim 20 , wherein the printed wiring board includes an external shell that is a dielectric material, and wherein the external shell is at least part of the exterior of an apparatus selected from a mobile computing system and a drone.