Reactor design for large-area VHF plasma processing with improved uniformity
An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.
1. A plasma processing chamber, comprising:
a chamber body;
a lid coupled to the chamber body defining a processing volume;
a substrate support disposed within the processing volume;
a faceplate coupled to the lid having a plurality of apertures formed therethrough; and
a backing plate disposed between the faceplate and the lid, the backing plate comprising:
a rectangular shaped body having a pair of long sides and a pair of short sides;
a plurality of ferrite blocks disposed within a plurality of recesses formed within the backing plate on each long side of the rectangular shaped body, the plurality of recesses each having a cover disposed within the recess, wherein a dielectric spacer is disposed between each ferrite block and each cover, the dielectric spacer disposed above the ferrite block, each dielectric spacer surrounding the respective cover and located between the respective cover and the backing plate; and
wherein each ferrite block may be formed from as a single billet of material or of multiple pieces.
2. The plasma processing chamber of claim 1 , wherein the plurality of ferrite blocks comprises intermittently spaced ferrite blocks defining a space between adjacent blocks.
3. The processing chamber of claim 1 , wherein the recesses having the ferrite blocks therein are disposed in at least a single row along the long side of the rectangular shaped body.
4. The plasma processing chamber of claim 1 , further comprising:
a VHF power generator;
one or more VHF feeds coupled to the power generator and the backing plate; and
an impedance matching circuit coupled to the VHF power generator.
5. The plasma processing chamber of claim 1 , further comprising a gas feed assembly in fluid communication with the processing volume, the gas feed assembly comprising:
a gas source;
a remote plasma source; and
a zero field feed through.
6. The plasma processing chamber of claim 1 , further comprising a shadow frame, wherein the shadow frame is electrically coupled to the chamber body by a plurality of grounding straps formed from a first portion, a second portion, and a third portion configured in an overlapping serpentine configuration.
7. The plasma processing chamber of claim 1 , wherein the substrate support is coupled to the chamber body by a plurality of grounding straps.
8. The plasma processing chamber of claim 1 , wherein the faceplate has either a curved first surface, a curved second surface, or both a curved first surface and a curved second surface.
9. A plasma processing chamber, comprising:
a chamber body;
a lid coupled to the chamber body defining a processing volume;
a substrate support disposed within the processing volume;
a faceplate coupled to the lid having a plurality of apertures formed therethrough; and
a backing plate disposed between the faceplate and the lid, the backing plate comprising a plurality of ferrite blocks disposed within the backing plate, wherein each ferrite block of the plurality of ferrite blocks is disposed beneath a respective cover, and a dielectric spacer is disposed between each ferrite block and the respective cover, each dielectric spacer surrounding the respective cover and located between the respective cover and the backing plate, wherein each respective cover is disposed within a recess within the backing plate.
10. The plasma processing chamber of claim 9 , further comprising:
a VHF power generator;
one or more VHF feeds coupled to the power generator and the backing plate; and
an impedance matching circuit coupled to the VHF power generator.
11. The plasma processing chamber of claim 9 , further comprising a gas feed assembly in fluid communication with the processing volume, the gas feed assembly comprising:
a gas source;
a remote plasma source; and
a zero field feed through.
12. The plasma processing chamber of claim 9 , further comprising a shadow frame, wherein the shadow frame is electrically coupled to the chamber body by a plurality of grounding straps formed from a first portion, a second portion, and a third portion configured in an overlapping serpentine configuration.
13. The plasma processing chamber of claim 9 , wherein the substrate support is coupled to the chamber body by a plurality of grounding straps.
14. The plasma processing chamber of claim 9 , wherein the faceplate has either a curved first surface, a curved second surface, or both a curved first surface and a curved second surface.
15. A lid assembly, comprising:
a lid configured to couple to a chamber body;
a backing plate having a support frame coupled to the lid;
a faceplate disposed proximate to the backing plate defining a gas volume therebetween;
a plurality of gas flow apertures formed through the faceplate;
a plurality of ferrite blocks coupled to the backing plate, wherein each ferrite block of the plurality of ferrite blocks is disposed within a respective recess of a plurality of recesses within the backing plate, wherein the respective recess has a respective cover of a plurality of covers disposed within the respective recess, and wherein a dielectric spacer is disposed between each ferrite block and the respective cover, the dielectric spacer disposed above the ferrite block, each dielectric spacer surrounding the respective cover and located between the respective cover and the backing plate; and
wherein each ferrite block may be formed from as a single billet or of multiple pieces.
16. The lid assembly of claim 15 , wherein the plurality of ferrite blocks comprises intermittently spaced ferrite blocks defining a space between adjacent blocks.
17. The lid assembly of claim 15 , wherein the recesses having the plurality of ferrite blocks disposed therein are disposed in at least a single row along the long side of the rectangular shaped body.
18. The processing chamber of claim 1 , wherein the spacers and the ferrite blocks are separated by a gap.
19. The processing chamber of claim 18 , wherein the gap is between about 1 mm and 3 mm.
20. The processing chamber of claim 1 , wherein each dielectric spacer surrounds the sides and bottom of the cover.
21. The processing chamber of claim 1 , wherein the backing plate includes a first surface facing away from the faceplate, and second surface facing toward the faceplate; and
the plurality of recesses are formed within the backing plate and extend inwardly of the first surface of the backing plate.
22. The processing chamber of claim 9 , wherein the backing plate includes a first surface facing away from the faceplate, and second surface facing toward the faceplate; and
the plurality of recesses are formed within the backing plate and extend inwardly of the first surface of the backing plate.
23. The lid assembly of claim 15 , wherein the backing plate includes a first surface facing away from the faceplate, and second surface facing toward the faceplate; and
the plurality of recesses are formed within the backing plate and extend inwardly of the first surface of the backing plate.