Interconnect structure, semiconductor structure including interconnect structure and method for forming the same

1. An interconnect structure comprising:

a plurality of first pads, wherein the first pads are arranged along a direction to form a row, and the first pads are grouped into a first group, a second group and an n th group, and n is an integer equal to or greater than 2;

a plurality of second pads, wherein the second pads are arranged along the direction to form a row parallel to the row formed by the first pads, and the second pads are grouped into a first group, a second group and an n th group;

a plurality of first conductive lines disposed in a first layer, a plurality of second conductive lines disposed in a second layer and a plurality of n th conductive lines disposed in an n th layer, wherein the first layer, the second layer and the n th layer are stacked to form a multi-layered structure; and

a pair of first conductive pillars, a pair of second conductive pillars and a pair of n th conductive pillars disposed in the first layer, the second layer and the n th layer, wherein the pair of first conductive pillars is in direct contact with the first pad of the first group and the second pad of the first group, the pair of second conductive pillars is in direct contact with the first pad in the second group and the second pad in the second group, and the pair of n th conductive pillars is in direct contact with the first pad in the n th group and the second pad in the n th group, and each of the pair of first conductive pillars, the pair of second conductive pillars and the n th conductive pillars has a same height,

wherein the first pads and the second pads are disposed over the first layer, the second layer and the n th layer, each of the first pads in the first group is electrically connected to one of the second pads in the first group by one of the first conductive lines in the first layer and electrically isolated from the second pads in the second group and the n th group, each of the first pads in the second group is electrically connected to one of the second pads in the second group by one of the second conductive lines in the second layer and electrically isolated from the second pads in the first group and the n th group, and each of the first pads in the n th group is electrically connected to one of the second pads in the n th group by one of the n th conductive lines in the n th layer and electrically isolated from the second pads in the first group and the second group.

2. The interconnect structure of claim 1 , wherein the first pads are separated from each other by a first distance, the second pads are separated from each other by a second distance, at least one of the first pads is adjacent to one of the second pads, and the at least one of the first pads is separated from the adjacent second pad by a third distance greater than the first distance and the second distance.

3. The interconnect structure of claim 2 , wherein a sum of widths of the first conductive lines in the first layer is less than the third distance, a sum of widths of the second conductive lines in the second layer is less than the third distance, and a sum of widths of the n th conductive lines in the n th layer is less than the third distance.

4. The interconnect structure of claim 1 , wherein the second layer is disposed over the first layer, and the n th layer is disposed over an (n−1) th layer.

5. The interconnect structure of claim 1 , wherein the second layer is disposed under the first layer, and the n th layer is disposed under an (n−1) th layer.

6. The interconnect structure of claim 1 ,

wherein the pair of first conductive pillars include a first functional portion, the pair of second conductive pillars include a second functional portion, the pair of n th conductive pillars include an n th functional portion, a height of the first functional portion, a height of the second functional portion and a height of the n th functional portion are different from each other.

7. The interconnect structure of claim 1 , wherein at least one of the first pads comprises a subsidiary line extending along a second direction, and the second direction is different from the first direction.

8. The interconnect structure of claim 1 , wherein the first pads in each group include a first subordinate pad, a second subordinate pad and an n th subordinate pad sequentially arranged along the direction, the second pads in each group include a first subordinate pad, a second subordinate pad and an n th subordinate pad sequentially arranged along the direction, and the first subordinate pad of the first pads in each group is electrically connected to the first subordinate pad of the second pads in each group, the second subordinate pad of the first pads in each group is electrically connected to the second subordinate pad of the second pads in each group, and the n th subordinate pad of the first pads in each group is electrically connected to the n th subordinate pad of the second pads in each group.

9. An interconnect structure comprising:

a plurality of first pads, wherein the first pads are arranged along a direction to form a row, and the first pads are grouped into a first group, a second group and an n th group, and n is an integer equal to or greater than 2;

a plurality of second pads, wherein the second pads are arranged along the direction to form a row parallel to the row formed by the first pads, and the second pads are grouped into a first group, a second group and an n th group;

a multi-layered structure comprising a first layer, a second layer over the first layer, and an n th layer over an n−1 th layer;

a plurality of first conductive lines disposed in the first layer;

a plurality of second conductive lines disposed in the second layer over the first layer;

a plurality of n th conductive lines disposed in the n th layer over the n−1 th layer; and

a pair of first conductive pillars, a pair of second conductive pillars and a pair of n th conductive pillars disposed in the multi-layered structure, wherein the pair of first conductive pillars is in direct contact with the first pad of the first group and the second pad of the first group, the pair of second conductive pillars is in direct contact with the first pad in the second group and the second pad in the second group, and the pair of n th conductive pillars is in direct contact with the first pad in the n th group and the second pad in the n th group, and each of the pair of first conductive pillars, the pair of second conductive pillars and the n th conductive pillars has a same height,

wherein the first pads and the second pads are disposed over multi-layered structure, each of the first pads in the first group is electrically connected to one of the second pads in the first group by one of the first conductive lines in the first layer and electrically isolated from the second pads in the second group and the n th group, each of the first pads in the second group is electrically connected to one of the second pads in the second group by one of the second conductive lines in the second layer and electrically isolated from the second pads in the first group and the n th group, and each of the first pads in the n th group is electrically connected to one of the second pads in the n th group by one of the n th conductive lines in the n th layer and electrically isolated from the second pads in the first group and the second group.

10. The interconnect structure of claim 9 , wherein the first pads are separated from each other by a first distance, the second pads are separated from each other by a second distance, at least one of the first pads is adjacent to one of the second pads, and the at least one of the first pads is separated from the adjacent second pad by a third distance greater than the first distance and the second distance.

11. The interconnect structure of claim 10 , wherein a sum of widths of the first conductive lines in the first layer is less than the third distance, a sum of widths of the second conductive lines in the second layer is less than the third distance, and a sum of widths of the n th conductive lines in the n th layer is less than the third distance.

12. The interconnect structure of claim 9 ,

wherein the pair of first conductive pillars include a first functional portion, the pair of second conductive pillars include a second functional portion, the pair of n th conductive pillars include an n th functional portion, a height of the first functional portion, a height of the second functional portion and a height of the n th functional portion are different from each other.

13. The interconnect structure of claim 12 , wherein the pair of first conductive pillars include a first dummy portion, the pair of second conductive pillars include a second dummy portion, the pair of n th conductive pillars include an n th dummy portion, a height of the first dummy portion, a height of the second dummy portion and a height of the n th dummy portion are different from each other.

14. The interconnect structure of claim 13 , wherein a sum of the heights of the first functional portion and the first dummy portion of the pair of first conductive pillar, a sum of the heights of the second functional portion and the second dummy portion of the pair of second conductive pillar, and a sum of the heights of the n th pair of functional portion and the nth dummy portion of the n th conductive pillar are the same.

15. The interconnect structure of claim 9 , wherein at least one of the first pads comprises a subsidiary line extending along a second direction, and the second direction is different from the first direction.

16. The interconnect structure of claim 15 , wherein the first pads in each group include a first subordinate pad, a second subordinate pad and an n th subordinate pad sequentially arranged along the direction, the second pads in each group include a first subordinate pad, a second subordinate pad and an n th subordinate pad sequentially arranged along the direction, and the first subordinate pad of the first pads in each group is electrically connected to the first subordinate pad of the second pads in each group, the second subordinate pad of the first pads in each group is electrically connected to the second subordinate pad of the second pads in each group, and the n th subordinate pad of the first pads in each group is electrically connected to the n th subordinate pad of the second pads in each group.

17. An interconnect structure comprising:

a plurality of first pads, wherein the first pads are arranged along a direction to form a row, and the first pads are grouped into a first group, a second group and an n th group, and n is an integer equal to or greater than 2;

a plurality of second pads, wherein the second pads are arranged along the direction to form a row parallel to the row formed by the first pads, and the second pads are grouped into a first group, a second group and an n th group;

a multi-layered structure comprising a first layer, a second layer over the first layer, and an n th layer over an n−1 th layer;

a plurality of first conductive lines disposed in the first layer;

a plurality of second conductive lines disposed in the second layer over the first layer;

a plurality of n th conductive lines disposed in the n th layer over the n−1 th layer;

a plurality of first conductive pillars electrically connecting and in direct contact with one of the first pads in the first group to one of the first conductive lines, and electrically connecting one of the second pads in the first group to the one of the first conductive lines;

a plurality of second conductive pillars electrically connecting and in direct contact with one of the first pads in the second group to one of the second conductive lines, and electrically connecting one of the second pads in the second group to the one of the second conductive lines; and

a plurality of n th conductive pillars electrically connecting and in direct contact with one of the first pads in the n th group to one of the n th conductive lines, and electrically connecting one of the second pads in the n th group to the one of the n th conductive lines,

wherein each of the plurality of first conductive pillars, the plurality of second conductive pillars and the plurality of n th conductive pillars has a same height,

wherein each of the first pads in the first group is electrically connected to one of the second pads in the first group by one of the first conductive lines in the first layer and electrically isolated from the second pads in the second group and the n th group, each of the first pads in the second group is electrically connected to one of the second pads in the second group by one of the second conductive lines in the second layer and electrically isolated from the second pads in the first group and the n th group, and each of the first pads in the n th group is electrically connected to one of the second pads in the n th group by one of the n th conductive lines in the n th layer and electrically isolated from the second pads in the first group and the second group.

18. The interconnect structure of claim 17 , wherein the first conductive pillars include a first functional portion, the second conductive pillars include a second functional portion, the n th conductive pillars include an n th functional portion, a height of the first functional portion, a height of the second functional portion, and a height of the n th functional portion are different from each other.

19. The interconnect structure of claim 18 , wherein the first conductive pillars include a first dummy portion, the second conductive pillars include a second dummy portion, the n th conductive pillars include an n th dummy portion, a height of the first dummy portion, a height of the second dummy portion, and a height of the n th dummy portion are different from each other.

20. The interconnect structure of claim 19 , wherein a sum of the heights of the first functional portion and the first dummy portion of the first conductive pillar, a sum of the heights of the second functional portion and the second dummy portion of the second conductive pillar, and a sum of the heights of the n th functional portion and the n th dummy portion of the n th conductive pillar are the same.