Semiconductor device with capacitor element
A semiconductor device includes a substrate and at least one capacitor element. The capacitor element is on the substrate. The capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.
1. A semiconductor device, comprising:
a substrate;
at least one capacitor element on the substrate, wherein the at least one capacitor element comprises:
a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate; and
a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer; and
a connection feature penetrating through the interlayer dielectric layer and the substrate, wherein the connection feature extends to reach a bottom surface of the substrate, and the first pad of one of the at least one capacitor element is connected to the connection feature.
2. The semiconductor device as claimed in claim 1 , further comprising a dielectric layer between the substrate and the at least one capacitor element.
3. The semiconductor device as claimed in claim 1 , wherein the at least one capacitor element comprises a plurality of capacitor elements successively and vertically stacked on the substrate, and each of the plurality of capacitor elements comprises the first electrode with the first pad and the first terminals and the second electrode with the second pad and the second terminals.
4. The semiconductor device as claimed in claim 3 , wherein the first pad of a lower one of the capacitor elements is connected to the second pad of an upper one of the capacitor elements.
5. The semiconductor device as claimed in claim 4 , wherein the second pad of the lower one of the capacitor elements is connected to the first pad of the upper one of the capacitor elements.
6. The semiconductor device as claimed in claim 5 , further comprising a dielectric layer between the lower one of the capacitor elements and the upper one of the capacitor elements, and a conductive layer in the dielectric layer.
7. The semiconductor device as claimed in claim 1 , further comprising a first IC element on the substrate, wherein the first IC element is substantially on a same level as the at least one capacitor element, and the first IC element is connected to the connection feature.
8. The semiconductor device as claimed in claim 7 , wherein the first IC element comprises memory, a graphics processing unit (GPU), a central processing unit (CPU), or a combination thereof.
9. The semiconductor device as claimed in claim 8 , further comprising a second IC element over and connected to the first IC element, and a third IC element over the at least one capacitor element.
10. The semiconductor device as claimed in claim 9 , wherein the second IC element and the third IC element each comprises memory, a graphics processing unit (GPU), a central processing unit (CPU), or a combination thereof.