Memory device with multi-layer liner structure
A memory cell design is disclosed. The memory cell structure includes phase change and selector layers stacked between top and bottom electrodes. An ohmic contact may be included between the phase change and selector layers. A multi-layer liner structure is provided on sidewalls of the phase change layer. In some such cases, the liner structure is above and not on sidewalls of the selector layer. The liner structure includes a first dielectric layer, and a second dielectric layer on the first dielectric layer. The liner structure includes a third dielectric layer on the second dielectric layer and that is sacrificial in nature, and may not be present in the final structure. The second dielectric layer comprises a high-k dielectric material or a metal silicate material. The second dielectric layer protects the phase change layer from lateral erosion and physical vertical etch and provides etch selectivity during the fabrication process.
1. A memory device comprising:
a first memory cell in an array and including a first layer of phase change material, the first layer including a first sidewall;
a second memory cell in the array and laterally adjacent but spaced from the first memory cell, the second memory cell including a second layer of the phase change material, the second layer including a second sidewall that faces the first sidewall;
a first dielectric structure including first and second dielectric layers, the first dielectric layer on the first sidewall, and the second dielectric layer on the first dielectric layer and comprising a high-k dielectric or a metal silicate; and
a second dielectric structure on the second sidewall, wherein the first memory cell further includes a first selector layer, and the first dielectric structure is not on the first selector layer, and wherein the second memory cell further includes a second selector layer, and the second dielectric structure is not on the second selector layer.
2. The memory device of claim 1 , wherein:
the first memory cell further includes a first conductive structure between the first selector layer and the first layer of the phase change material; and
the second memory cell further includes a second conductive structure between the second selector layer and the second layer of the phase change material.
3. The memory device of claim 2 , wherein:
the first dielectric structure is on at least one surface of the first conductive structure; and
the second dielectric structure is on at least one surface of the second conductive structure.
4. The memory device of claim 1 , wherein:
the first memory cell further includes a first upper contact structure and a first lower contact structure, the first layer of the phase change material and the first selector layer being between the first upper contact structure and the first lower contact structure; and
the second memory cell further includes a second upper contact structure and a second lower contact structure, the second layer of the phase change material and the second selector layer being between the second upper contact structure and the second lower contact structure.
5. The memory device of claim 1 , wherein the first dielectric layer comprises a nitride and the high-k dielectric comprises oxygen and one of hafnium, zirconium, or aluminum.
6. The memory device of claim 1 , wherein the high-k dielectric comprises oxygen and one or more of Li, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Ir, Pt, Pb, and Bi.
7. The memory device of claim 1 , wherein the metal silicate comprises silicon, oxygen, and one or more of Li, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Ir, Pt, Pb, and Bi.
8. The memory device of claim 1 , wherein the phase change material comprises chalcogenide.
9. An integrated circuit comprising the memory device of claim 1 .
10. A memory device, comprising:
an array of memory cells, each memory cell comprising
a first stack of layers including at least one conductive layer and at least one selector layer;
a phase change layer over the first stack of layers;
one or more conductive layers over the phase change layer;
a first dielectric layer on one or more sidewalls of at least the phase change layer; and
a second dielectric layer on the first dielectric layer and over the one or more sidewalls of at least the phase change layer, wherein the second dielectric layer comprises a high-k material or a metal silicate, and wherein the first dielectric layer and the second dielectric layer are not on the at least one selector layer included in the first stack of layers.
11. The memory device of claim 10 , wherein the high-k material comprises oxygen and one of hafnium, zirconium, or aluminum.
12. The memory device of claim 10 , wherein the high-k material comprises oxygen and one or more of Li, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Ir, Pt, Pb, and Bi.
13. The memory device of claim 10 , wherein the metal silicate comprises silicon, oxygen, and one or more of Li, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Ir, Pt, Pb, and Bi.
14. The memory device of claim 10 , wherein the phase change layer comprises chalcogenide.
15. An integrated circuit comprising the memory device of claim 10 .
16. An electronic device, comprising:
a chip package comprising one or more dies, at least one of the one or more dies comprising
a first stack of layers including at least one conductive layer and at least one selector layer;
a phase change layer over the first stack of layers;
one or more conductive layers over the phase change layer;
a first dielectric layer on one or more sidewalls of at least the phase change layer; and
a second dielectric layer on the first dielectric layer and over the one or more sidewalls of at least the phase change layer, wherein the second dielectric layer comprises a high-k material or a metal silicate, and wherein the first dielectric layer and the second dielectric layer are not on the at least one selector layer included in the first stack of layers.
17. The electronic device of claim 16 , wherein the first dielectric layer comprises a nitride and the high-k material comprises hafnium oxide, zirconium oxide, or aluminum oxide.
18. The electronic device of claim 16 , wherein the high-k material comprises oxygen and one or more of Li, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Ir, Pt, Pb, and Bi.
19. The electronic device of claim 16 , wherein the metal silicate comprises silicon, oxygen, and one or more of Li, B, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Sr, Y, Zr, Nb, Mo, Ru, Rh, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Ir, Pt, Pb, and Bi.