Sheath and temperature control of a process kit in a substrate processing chamber
Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.
1. A substrate support for use in a substrate processing chamber, comprising: a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring, wherein the ceramic ring includes an upper inner notch, wherein the upper inner notch includes an o-ring to provide a seal between the ceramic ring and the ceramic plate, and wherein a second o-ring is disposed between the ceramic ring and a cooling plate at a location radially outward of the ceramic plate; and the cooling plate is coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.
2. The substrate support of claim 1 , further comprising an edge ring disposed on the ceramic ring, and wherein a radially innermost surface of the edge ring is disposed radially outward of the thermal break.
3. The substrate support of claim 1 , further comprising a first gas channel extending through the ceramic plate, and a second gas channel extending through the ceramic ring from the first side to the second side.
4. The substrate support of claim 1 , wherein the radially inner portion is raised with respect to the radially outer portion.
5. The substrate support of claim 1 , wherein the electrode is coupled to a negative pulsed DC power source.
6. The substrate support of claim 1 , wherein an outer diameter of the radially inner portion of the cooling plate is substantially equal to an outer diameter of the ceramic plate.
7. The substrate support of claim 1 , further comprising a bonding layer disposed between the ceramic ring and the cooling plate.
8. The substrate support of claim 1 , wherein a thickness of the ceramic ring from the first side to the second side is greater than a thickness of the ceramic plate from the first side to the second side.
9. The substrate support of claim 1 , wherein the thermal break comprises an annular channel that extends from an upper surface of the cooling plate towards a lower surface of the cooling plate.
10. A substrate support for use in a substrate processing chamber, comprising: a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode and a heating element embedded in the ceramic plate, and wherein the ceramic plate includes a first gas channel extending from the first side to the second side; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring, and wherein the ceramic ring includes a second gas channel extending through the ceramic ring and is spaced apart from the ceramic plate; an edge ring disposed on the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein an o-ring is disposed between the ceramic ring and the cooling plate at a location radially outward of the ceramic plate.
11. The substrate support of claim 10 , wherein the cooling plate includes a radially inner portion and a radially outer portion and a thermal break disposed therebetween.
12. The substrate support of claim 11 , wherein the cooling plate includes first coolant channels in the radially inner portion configured to circulate a coolant and second coolant channels in the radially outer portion configured to circulate a coolant, wherein the first coolant channels are fluidly independent from the second coolant channels.
13. The substrate support of claim 10 , further comprising a second ceramic ring disposed about both the ceramic ring and the edge ring.
14. The substrate support of claim 13 , further comprising a third ceramic ring to support the second ceramic ring, wherein the third ceramic ring is configured to raise the second ceramic ring and the edge ring when the third ceramic ring is raised.
15. A process chamber, comprising: a chamber body having the substrate support of claim 1 disposed within an inner volume of the chamber body.
16. The process chamber of claim 15 , wherein the chucking electrode embedded in the ceramic ring is coupled to a negative pulsed DC power source.
17. The process chamber of claim 16 , wherein the electrode of the ceramic plate is coupled to a negative pulsed DC power source.
18. The process chamber of claim 16 , wherein the electrode of the ceramic plate is coupled to an RF power source.
19. The process chamber of claim 16 , further comprising a match network coupled to the electrode of the ceramic plate and the chucking electrode of the ceramic ring.