IP Library › Granted Patent US 11,552,240
Granted Patent B2
US 11,552,240 · App. 16/571,794 · Granted Jan 10, 2023

Machines and processes for producing polymer films and films produced thereby

Inventors: Mukerrem Cakmak (West Lafayette, IN); Armen Yildirim (West Lafayette, IN); Rahim Rahimi (West Lafayette, IN); Saeed Mohammadi (Zionsville, IN); Ali Shakouri (West Lafayette, IN)
Assignee: Purdue Research Foundation
H01L41/193G01L1/18G01L9/06H01L41/0472H01L41/0805H01L41/0825H01L41/09H01L41/1132H01L41/1876
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Quick Facts
Patent No.
US 11,552,240
App. No.
16/571,794
Granted
Jan 10, 2023
Kind
B2
Abstract

A sensor is disclosed which includes a piezoelectric layer, a piezoresistive layer, one or more electrode layers coupled to the piezoelectric layer and to the piezoresistive layer, the piezoelectric layer configured to provide an electrical signal in response to application of a dynamic disturbance, and the piezoresistive layer configured to provide a change in resistivity in response to application of a static disturbance.

Claims (16)

1. A sensor, comprising:

a piezoelectric layer;

a piezoresistive layer;

one or more electrode layers coupled to the piezoelectric layer and to the piezoresistive layer;

the piezoelectric layer configured to provide an electrical signal in response to application of a dynamic disturbance; and

the piezoresistive layer configured to provide a change in resistivity in response to application of a static disturbance,

Wherein the piezoresistive layer comprises nickel particles aligned by a magnetic field in PDMS.

2. The sensor of claim 1 , wherein the resistivity of the piezoresistive layer change by more than about 105 ohm-cm when a static disturbance of between about 1 to about 3 MPa is applied.

3. The sensor of claim 1 , further comprising a thin film transistor (TFT) layer disposed in the sensor.

4. The sensor of claim 1 , wherein the TFT layer is coupled to the piezoelectric layer.

5. The sensor of claim 4 , the TFT layer includes an energy harvesting circuit configured to convert dynamic disturbance applied to the piezoelectric layer into charge held in a capacitor.

6. The sensor of claim 5 , the energy harvesting circuit includes a diode network disposed in a bridge configuration configured to rectify time varying signal from the piezoelectric layer into a rectified current.

7. The sensor of claim 1 , wherein the nickel particles are in form of powder.

8. The sensor of claim 1 , wherein the nickel particles are in form of flakes.

9. The sensor of claim 1 , the piezoelectric layer comprises vertically aligned lead zirconate titanate (PZT) particles and Graphene Nanoplatelets (GNPs) in a polymer matrix.

10. The sensor of claim 1 , the PZT is aligned via electric field assisted alignment.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2022
From: MOHAMMADI, SAEED; SHAKOURI, ALI; RAHIMI, RAHIM; CAKMAK, MUKERREM; YILDIRIM, ARMEN
To: PURDUE RESEARCH FOUNDATION
Reel/Frame 061281/0335 →
Continuity (3)
Continuation In Part 16167714 · Oct 23, 2018
Provisional Application 62576601 · Oct 24, 2017
Related Publication 20200013946A1 · Jan 9, 2020
Cited By (2)
US 12,310,163 US 12,534,043