Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
1. An imaging device, comprising:
a first substrate including a plurality of pixels and a first wiring layer, the first wiring layer including a first electrode, a first interlayer insulating film, and a first protective layer; and
a second substrate including a second wiring layer, the second wiring layer including a second electrode, a second interlayer insulating film, and a second protective layer,
wherein the first substrate and the second substrate are bonded to each other such that the first wiring layer and the second wiring layer are facing each other,
wherein the first protective layer surrounds the first electrode in a plan view,
wherein the first interlayer insulating film is disposed between the first protective layer and the first electrode in the plan view,
wherein the second protective layer surrounds the second electrode in the plan view, and
wherein the second interlayer insulating film is disposed between the second protective layer and the second electrode in the plan view.
2. The imaging device of claim 1 , wherein the first protective layer contacts the second protective layer.
3. The imaging device of claim 1 , wherein a width of the first protective layer is different from a width of the second protective layer in a cross-sectional view.
4. The imaging device of claim 1 , wherein the first protective layer and the second protective layer include one of Ti, Ta, Ru or any nitrides of Ti, Ta, or Ru.
5. The imaging device of claim 1 , wherein the first protective layer includes a first region and a second region in a cross-sectional view, and wherein the first electrode is disposed between the first region and the second region in the cross-sectional view.
6. The imaging device of claim 1 , wherein the second protective layer includes a third region and a fourth region in a cross-sectional view, and wherein the second electrode is disposed between the third region and the fourth region.
7. The imaging device of claim 1 , wherein the plan view is a bonded surface of the first wiring layer and the second wiring layer.
8. The imaging device of claim 1 , wherein the first protective layer is in a shape of a circle in the plan view.
9. The imaging device of claim 1 , wherein the second protective layer is in a shape of a circle in the plan view.
10. The imaging device of claim 1 , wherein the first protective layer and the second protective layer are configured to protect the first electrode and the second electrode from water.
11. The imaging device of claim 1 , further comprising:
a barrier metal disposed between the first electrode and the first interlayer insulating film.
12. The imaging device of claim 11 , wherein the barrier metal includes one of Ti, Ta, Ru, or any nitrides of Ti, Ta, or Ru.
13. The imaging device of claim 1 , wherein the first wiring layer includes a third electrode,
wherein the third electrode contacts the first electrode.
14. The imaging device of claim 1 , wherein the second wiring layer includes a fourth electrode,
wherein the fourth electrode contacts the second electrode.
15. The imaging device of claim 1 , wherein the first electrode and the second electrode are different sizes.
16. An electronic device, comprising:
an imaging device, including:
a first substrate including a plurality of pixels and a first wiring layer, the first wiring layer including a first electrode, a first interlayer insulating film, and a first protective layer; and
a second substrate including a second wiring layer, the second wiring layer including a second electrode, a second interlayer insulating film, and a second protective layer,
wherein the first substrate and the second substrate are bonded to each other such that the first wiring layer and the second wiring layer are facing each other,
wherein the first protective layer surrounds the first electrode in a plan view,
wherein the first interlayer insulating film is disposed between the first protective layer and the first electrode in the plan view,
wherein the second protective layer surrounds the second electrode in the plan view, and wherein the second interlayer insulating film is disposed between the second protective layer and the second electrode in the plan view; and
a signal processing circuit configured to process an output signal of said imaging device.
17. A method for providing a semiconductor device, comprising:
producing a first substrate including a plurality of pixels and a first wiring layer, the first wiring layer including a first electrode, a first interlayer insulating film, and a first protective layer;
producing a second substrate including a second wiring layer, the second wiring layer including a second electrode, a second interlayer insulating film, and a second protective layer; and
bonding the first substrate and the second substrate to each other such that the first wiring layer and the second wiring layer are facing each other,
wherein the first protective layer surrounds the first electrode in a plan view,
wherein the first interlayer insulating film is disposed between the first protective layer and the first electrode in the plan view,
wherein the second protective layer surrounds the second electrode in the plan view, and
wherein the second interlayer insulating film is disposed between the second protective layer and the second electrode in the plan view.