Semiconductor device comprising electronic components electrically joined to each other via metal nanoparticle sintered layer and method of manufacturing the same

1. A semiconductor device, comprising electronic components electrically joined to each other via a metal nanoparticle sintered layer,

wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and

wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer,

wherein the metal nanoparticle sintered layer is only composed of a layer formed by applying a paste containing organic material-coated Ag nanoparticles to form a Ag nanoparticle layer, and sintering the Ag nanoparticle layer, and

wherein the metallization layer includes Au, Cu, Ni, or Ti as a main component.

2. The semiconductor device according to claim 1 , wherein the metal diffusion region has a thickness of 1 nm or more and less than 100 nm.

3. The semiconductor device according to claim 1 , wherein a surface of the metallization layer includes a pattern of irregularities each having a size of 1 or less.

4. The semiconductor device according to claim 1 , wherein the metallization layer consists of Au, Cu, Ni, or Ti.