IP Library › Granted Patent US 11,569,220
Granted Patent B2
US 11,569,220 · App. 16/726,829 · Granted Jan 31, 2023

Electrostatic discharge protection device and method

Inventor: Wen-Tai Wang (Hsinchu, TW)
Assignees: GLOBAL UNICHIP CORPORATION; TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H01L27/0248H01L29/861H02H9/044H02H9/046
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Quick Facts
Patent No.
US 11,569,220
App. No.
16/726,829
Granted
Jan 31, 2023
Kind
B2
Abstract

An electrostatic discharge (ESD) protection device includes a first clamping circuit, a second clamping circuit, and a diode circuit. The first clamping circuit is coupled between a first power rail and a second power rail. The second clamping circuit is coupled between a third power rail and the second power rail. The diode circuit is configured to steer an ESD current from an input/output pad to at least one of the first clamping circuit or the third power rail. The first power rail receives a first voltage, the second power rail receives a second voltage, the third power rail receives a third voltage, the third voltage is higher than the first voltage, and the first voltage is higher than the second voltage.

Claims (40)

1. An electrostatic discharge (ESD) protection device, comprising:

a first clamping circuit coupled between a first power rail and a second power rail;

a second clamping circuit coupled between a third power rail and the second power rail, wherein the first clamping circuit and the second clamping circuit provide different discharge paths for an input/output pad, and the first clamping circuit is turned on faster than the second clamping circuit to discharge an electrostatic discharge current from the input/output pad; and

a diode circuit configured to steer the electrostatic discharge current from the input/output pad to at least one of the first clamping circuit or the second clamping circuit, wherein the diode circuit comprises a first diode, wherein an anode of the first diode is coupled to the input/output pad, and a cathode of the first diode is coupled to the first power rail, wherein the ESD current is steered to the first clamping circuit via the first diode;

wherein the first power rail receives a first voltage, the second power rail receives a second voltage, the third power rail receives a third voltage, the third voltage is higher than the first voltage, and the first voltage is higher than the second voltage.

2. The ESD protection device of claim 1 , wherein the first clamping circuit is implemented by a plurality of core transistors, and the second clamping circuit is implemented by a plurality of input/output transistors or a plurality of stacked core transistors.

3. The ESD protection device of claim 1 , wherein the first voltage is ⅔ to ¾ of the third voltage.

4. The ESD protection device of claim 1 , wherein a discharge capability of the first clamping circuit is higher than a discharge capability of the second clamping circuit.

5. The ESD protection device of claim 1 , wherein an internal resistance of the first clamping circuit is lower than an internal resistance of the second clamping circuit.

6. The ESD protection device of claim 1 , wherein the diode circuit further comprises:

a second diode, wherein an anode of the second diode is coupled to the first power rail, and a cathode of the second diode is coupled to the third power rail; and

a third diode, wherein an anode of the third diode is coupled to the second power rail, and a cathode of the third diode is coupled to the input/output pad.

7. The ESD protection device of claim 6 , wherein the ESD current is steered to the third power rail via the first diode and the second diode in sequence.

8. The ESD protection device of claim 1 , wherein the diode circuit further comprises:

a second diode, wherein an anode of the second diode is coupled to the input/output pad, and a cathode of the second diode is coupled to the third power rail; and

a third diode, wherein an anode of the third diode is coupled to the second power rail, and a cathode of the third diode is coupled to the input/output pad.

9. The ESD protection device of claim 8 , wherein the ESD current is steered to third power rail via the second diode.

10. The ESD protection device of claim 1 , wherein the diode circuit further comprises:

a second diode, wherein an anode of the second diode is coupled to the second power rail, and a cathode of the second diode is coupled to the third power rail; and

a third diode, wherein an anode of the third diode is coupled to the second power rail, and a cathode of the third diode is coupled to the input/output pad.

11. The ESD protection device of claim 10 , wherein the ESD current is steered to the third power rail via the first diode, the first clamping circuit, and the second diode in sequence.

12. A method for electrostatic discharge (ESD) protection, comprising:

via a diode circuit, steering an ESD current from an input/output pad to at least one of a first clamping circuit or a second clamping circuit; and

discharging the ESD current via the first clamping circuit,

wherein the first clamping circuit is coupled between a second power rail and a third power rail, the second clamping circuit is coupled between a first power rail and the second power rail, the first power rail receiving a first voltage, the second power rail receiving a second voltage, the third power rail receiving a third voltage, the first voltage higher than the third voltage, the third voltage higher than the second voltage,

wherein the first clamping circuit and the second clamping circuit provide different discharge paths for the ESD current from the input/output pad, and the first clamping circuit is turned on faster than the second clamping circuit to discharge the ESD current from the input/output pad,

wherein the diode circuit comprises a first diode, wherein an anode of the first diode is coupled to the input/output pad, and a cathode of the first diode is coupled to the third power rail, wherein the ESD current is steered to the first clamping circuit via the first diode.

13. The method for ESD protection of claim 12 , wherein the first clamping circuit is implemented by a plurality of core transistors, and the second clamping circuit is implemented by a plurality of input/output transistors or a plurality of stacked core transistors.

14. The method for ESD protection of claim 12 , wherein the third voltage is ⅔ to ¾ of the first voltage.

15. The method for ESD protection of claim 12 , wherein a discharge capability of the first clamping circuit is higher than a discharge capability of the second clamping circuit.

16. The method for ESD protection of claim 12 , wherein an internal resistance of the first clamping circuit is lower than an internal resistance of the second clamping circuit.

17. The method for ESD protection of claim 12 , wherein the diode circuit further comprises a second diode, and the steering the ESD current via the diode circuit comprises:

steering the ESD current to the first power rail via the first diode and the second diode in sequence,

wherein an anode of the second diode is coupled to the third power rail, and a cathode of the second diode is coupled to the first power rail.

18. The method for ESD protection of claim 12 , wherein the diode circuit further comprises a second diode, and the steering the ESD current via the diode circuit comprises:

steering the ESD current to the first power rail via the second diode,

wherein an anode of the second diode is coupled to the input/output pad, and a cathode of the second diode is coupled to the first power rail.

19. The method for ESD protection of claim 12 , wherein the diode circuit further comprises a second diode, and the steering the ESD current via the diode circuit comprises:

steering the ESD current to the first power rail via the first diode, the first clamping circuit and the second diode in sequence,

wherein an anode of the second diode is coupled to the second power rail, and a cathode of the second diode is coupled to the first power rail.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 30, 2019
From: WANG, WEN-TAI
To: GLOBAL UNICHIP CORPORATION; TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 051383/0042 →
Priority Claims (1)
TW 108128626 · Aug 12, 2019 · national
Continuity (1)
Related Publication 20210050341A1 · Feb 18, 2021
Cited By (1)
US 12,650,347