IP Library › Granted Patent US 12,650,347
Granted Patent B2
US 12,650,347 · App. 17/719,387 · Granted Jun 9, 2026

Integration friendly thermal sensor

Inventors: Min-Hang Hsieh (Hsinchu City, TW); Jyun-Jia Huang (Hsinchu City, TW); Chien-Sheng Chao (Hsinchu City, TW); Ghien-An Shih (Hsinchu City, TW); Ching-Chung Ko (Hsinchu City, TW); Yu-Cheng Su (Hsinchu City, TW); Lin-Chien Chen (Hsinchu City, TW); Ai-Yun Liu (Hsinchu City, TW); Chia-Hsin Hu (Hsinchu City, TW)
Assignee: MEDIATEK INC.
G01K7/01H10D99/00
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Quick Facts
Patent No.
US 12,650,347
App. No.
17/719,387
Granted
Jun 9, 2026
Kind
B2
Abstract

The present invention provides a processing circuit including logic cells and a thermal sensor. The thermal sensor is positioned within the logic cells and surrounded by the logic cells, and the logic cells and the thermal sensor are all implemented by core devices.

Claims (22)

1 . A processing circuit, comprising:

logic cells; and

a thermal sensor, positioned within the logic cells and surrounded by the logic cells;

wherein the processing circuit and an another circuit is within a chip, and at least a portion of the another circuit is implemented by input/outout (I/O) devices;

wherein the logic cells and the thermal sensor are all implemented by core devices, and voltage endurance of the I/O devices is higher than that of the core devices.

2 . The processing circuit of claim 1 , wherein the thermal sensor is a bipolar junction transistor (BJT) thermal sensor.

3 . The processing circuit of claim 1 , wherein the thermal sensor is immediately adjacent to the surrounding logic cells, and there is no dummy region between the thermal sensor and the surrounding logic cells.

4 . The processing circuit of claim 3 , wherein there is no blank region and no dummy cell between the thermal sensor and the surrounding logic cells.

5 . The processing circuit of claim 3 , wherein the logic cells surrounding the thermal sensor have functions for a normal operation of the processing circuit.

6 . The processing circuit of claim 1 , wherein the another circuit is an interface circuit within the chip.

7 . A chip comprising:

at least one processing circuit; and

another circuit, wherein at least a portion of the another circuit is implemented by input/output (I/O) devices;

wherein the at least one processing circuit comprises:

logic cells; and

a thermal sensor, positioned within the logic cells and surrounded by the logic cells;

wherein the logic cells and the thermal sensor are all implemented by core devices, and voltage endurance of the I/O devices is higher than that of the core devices.

8 . The chip of claim 7 , wherein the thermal sensor is a bipolar junction transistor (BJT) thermal sensor.

9 . The chip of claim 7 , wherein the thermal sensor is immediately adjacent to the surrounding logic cells, and there is no dummy region between the thermal sensor and the surrounding logic cells.

10 . The chip of claim 9 , wherein there is no blank region and no dummy cell between the thermal sensor and the surrounding logic cells.

11 . The chip of claim 9 , wherein the logic cells surrounding the thermal sensor have functions for a normal operation of the processing circuit.

12 . The chip of claim 7 , wherein the another circuit is an interface circuit within the chip.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2022
From: HSIEH, MIN-HANG; HUANG, JYUN-JIA; CHAO, CHIEN-SHENG; SHIH, GHIEN-AN; KO, CHING-CHUNG; SU, YU-CHENG; CHEN, LIN-CHIEN; LIU, AI-YUN; HU, CHIA-HSIN
To: MEDIATEK INC.
Reel/Frame 059579/0444 →
Continuity (2)
Provisional Application 63184329 · May 5, 2021
Related Publication 20220357211A1 · Nov 10, 2022
References Cited (52)
US 6144085A · Barker · 2000 [cited by applicant]
US 7661878B1 · Lall · 2010 [cited by examiner]
US 7701038B2 · Chen et al. · 2010 [cited by applicant]
US 8035165B2 · Yeh et al. · 2011 [cited by applicant]
US 8115280B2 · Chen et al. · 2012 [cited by applicant]
US 8373229B2 · Chen et al. · 2013 [cited by applicant]
US 8405943B2 · Song et al. · 2013 [cited by applicant]
US 8415764B2 · Chung et al. · 2013 [cited by applicant]
US 8455952B2 · Lin et al. · 2013 [cited by applicant]
US 8525278B2 · Chu et al. · 2013 [cited by applicant]
US 8530326B2 · Lai et al. · 2013 [cited by applicant]
US 8574995B2 · Jeng · 2013 [cited by applicant]
US 8586436B2 · Ng et al. · 2013 [cited by applicant]
US 8610241B1 · Hu et al. · 2013 [cited by applicant]
US 8703571B2 · Ke et al. · 2014 [cited by applicant]
US 8881066B2 · Shieh et al. · 2014 [cited by applicant]
US 8889460B2 · Hsu et al. · 2014 [cited by applicant]
US 8901665B2 · Kelly et al. · 2014 [cited by applicant]
US 8921218B2 · Yang et al. · 2014 [cited by applicant]
US 9076889B2 · Lee et al. · 2015 [cited by applicant]
US 9093566B2 · Fan et al. · 2015 [cited by applicant]
US 9146469B2 · Liu et al. · 2015 [cited by applicant]
US 9177801B2 · Lee et al. · 2015 [cited by applicant]
US 9184265B2 · Lai et al. · 2015 [cited by applicant]
US 9202691B2 · Huang et al. · 2015 [cited by applicant]
US 9209156B2 · Len et al. · 2015 [cited by applicant]
US 9263342B2 · Lee et al. · 2016 [cited by applicant]
US 9337190B2 · Fung · 2016 [cited by applicant]
US 9397157B2 · Kuo et al. · 2016 [cited by applicant]
US 9461170B2 · Lin et al. · 2016 [cited by applicant]
US 9536964B2 · Shiao et al. · 2017 [cited by applicant]
US 9595475B2 · Liaw · 2017 [cited by applicant]
US 9780003B2 · Hu et al. · 2017 [cited by applicant]
US 9793385B2 · Huo et al. · 2017 [cited by applicant]
US 9912228B2 · Al-Shyoukh et al. · 2018 [cited by applicant]
US 10008531B2 · Chou et al. · 2018 [cited by applicant]
US 10049885B2 · Ng et al. · 2018 [cited by applicant]
US 10170332B2 · Huang · 2019 [cited by applicant]
US 10296032B2 · Horng et al. · 2019 [cited by applicant]
US 10361220B2 · Wang et al. · 2019 [cited by applicant]
US 11569220B2 · Wang · 2023 [cited by examiner]
US 20090285261A1 · Casey · 2009 [cited by applicant]
US 20130228830A1 · Lee et al. · 2013 [cited by applicant]
US 20130237026A1 · Lee et al. · 2013 [cited by applicant]
US 20130320451A1 · Liu et al. · 2013 [cited by applicant]
US 20160124300A1 · Ho et al. · 2016 [cited by applicant]
US 20200105901A1 · Cheng et al. · 2020 [cited by applicant]
US 20200357787A1 · Sheu et al. · 2020 [cited by applicant]
US 20210050341A1 · Wang · 2021 [cited by applicant]
JP 2002296121A · 2002 [cited by applicant]
TW 202119002A · 2021 [cited by applicant]
TW 202206973A · 2022 [cited by applicant]