Cut-mask patterning process for FIN-like field effect transistor (FINFET) device

1. A mask for use in a lithography system having a defined resolution, the mask comprising:

first and second patterns that are greater than the defined resolution; and

a sub-resolution feature that is less than the defined resolution,

wherein portions of the first and second patterns are positioned close to each other and separated by the sub-resolution feature in an intersection area; and

wherein a size and shape of the sub-resolution feature are such that when the mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the interconnection area.

2. The mask of claim 1 , wherein the first and second patterns are generally rectangular and the resulting pattern is non-rectangular.

3. The mask of claim 2 , wherein the sub-resolution feature is generally rectangular.

4. The mask of claim 3 , wherein the first pattern, the second pattern, and the sub-resolution feature are oriented lengthwise along the same direction.

5. The mask of claim 1 , wherein the portions of the first and second patterns in the interconnection area are wider than remaining portions of the first and second patterns, respectively.

6. The mask of claim 1 , wherein the first and second patterns and the sub-resolution feature are of opposite tones.

7. The mask of claim 6 , wherein the first and second patterns are of a clear tone and the sub-resolution feature is of a dark tone.

8. A mask set for use in a lithography system having a defined resolution, the mask set comprising first and second masks, the first mask including:

first and second patterns that are greater than the defined resolution, wherein portions of the first and second patterns are positioned proximate to each other and separated by an intersection area; and

a sub-resolution feature between the first and second patterns and in the intersection area,

wherein a size and shape of the sub-resolution feature and a size of the intersection area are such that when the first mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the intersection area.

9. The mask set of claim 8 , wherein each of the first and second patterns is generally rectangular.

10. The mask set of claim 9 , wherein the first and second patterns are oriented lengthwise in the same direction.

11. The mask set of claim 9 , wherein the resulting pattern is non-rectangular.

12. The mask set of claim 8 , wherein the first and second patterns interconnected with each other through the intersection area are sized to pattern a configuration of fins.

13. The mask set of claim 8 , wherein the second mask includes:

a third pattern that is similar in shape to the combination of the first and second patterns and the intersection area.

14. The mask set of claim 13 , wherein the second mask is used for line cutting of a plurality of fins, and the first mask is used for end cutting of the plurality of fins.

15. A mask set for use in a lithography system having a defined resolution, the mask set comprising first and second masks, the first mask including a non-rectangular pattern, the second mask including first and second patterns that are generally rectangular, wherein the non-rectangular pattern and the first and second patterns have overlapping portions.

16. The mask set of claim 15 , wherein the non-rectangular pattern is used for cutting a plurality of fins in a first lithography process, thereby producing a plurality of fin ends; and wherein the first and second patterns are used for cutting the plurality of fin ends in a second lithography process.

17. The mask set of claim 16 , wherein the non-rectangular pattern and the first and second patterns collectively produce a non-rectangular area through the first and second lithography processes.

18. The mask set of claim 15 , wherein the first and second patterns are greater than the defined resolution and are separated by a sub-resolution feature in an interconnection area; and wherein a size and shape of the sub-resolution feature and a size of the intersection area are such that when the second mask is used in the lithography system, a resulting pattern includes the first and second patterns interconnected with each other through the intersection area.

19. The mask set of claim 18 , wherein the resulting pattern is non-rectangular.

20. The mask set of claim 18 , wherein the first and second patterns and the sub-resolution feature are of opposite types of tones.