Semiconductor devices with flexible reinforcement structure
Methods for manufacturing semiconductor devices having a flexible reinforcement structure, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a semiconductor device includes electrically coupling at least one semiconductor die to a redistribution structure on a first carrier. The semiconductor die can include a first surface connected to the redistribution structure and a second surface spaced apart from the redistribution structure. The method also includes reducing a thickness of the semiconductor die to no more than 10 μm. The method further includes coupling a flexible reinforcement structure to the second surface of the at least one semiconductor die.
1. A method of manufacturing a semiconductor device, the method comprising:
electrically coupling at least one semiconductor die to a redistribution structure on a first carrier, the semiconductor die including a first surface spaced apart from the redistribution structure and a second surface;
reducing a thickness of the semiconductor die to no more than 10 μm;
directly coupling a flexible reinforcement structure to the first surface of the semiconductor die; and
performing at least one of:
(1) mounting the redistribution structure and the semiconductor die to a flexible circuit, or
(2) positioning a second semiconductor die between the semiconductor die and the redistribution structure, the second semiconductor die having a thickness less than or equal to 10 μm.
2. The method of claim 1 wherein the flexible reinforcement structure comprises a polymeric material, a resin, a laminate, a film, or a combination thereof.
3. The method of claim 1 wherein the flexible reinforcement structure comprises at least one structural element embedded in a matrix material.
4. The method of claim 3 wherein the at least one structural element comprises a weave or a fiber.
5. The method of claim 1 wherein the flexible reinforcement structure has a thickness of no more than 10 μm.
6. The method of claim 1 wherein the flexible reinforcement structure is configured to protect the semiconductor die from one or more of chipping, cracking, or thermomechanical stress.
7. The method of claim 1 wherein coupling the flexible reinforcement structure to the second surface comprises laminating, coating, or molding the flexible reinforcement structure onto the second surface.
8. The method of claim 1 , further comprising:
coupling the flexible reinforcement structure to a second carrier;
separating the redistribution structure from the first carrier; and
electrically coupling the redistribution structure to an array of electrical connectors.
9. The method of claim 8 , further comprising:
separating the flexible reinforcement structure from the second carrier; and
electrically coupling the semiconductor die to a flexible circuit via the array of electrical connectors.
10. The method of claim 1 wherein the at least one semiconductor die comprises a plurality of semiconductor dies.
11. The method of claim 10 , further comprising singulating the plurality of semiconductor dies into a plurality of individual semiconductor devices.
12. A semiconductor device, comprising:
a semiconductor die having a first surface and a second surface, wherein the semiconductor die has a thickness less than or equal to 10 μm;
a flexible reinforcement structure directly fixed to the first surface of the semiconductor die;
a redistribution structure electrically coupled to the second surface of the semiconductor die; and
at least one of:
(1) a flexible circuit, wherein the redistribution structure and the semiconductor die are mounted on the flexible circuit, or
(2) a second semiconductor die between the semiconductor die and the redistribution structure, the second semiconductor die having a thickness less than or equal to 10 μm.
13. The semiconductor device of claim 12 , further comprising an array of electrical connectors electrically coupling the semiconductor die and the redistribution structure to the flexible circuit.
14. The semiconductor device of claim 12 wherein the thickness of the semiconductor die is less than or equal to 5 μm.
15. The semiconductor device of claim 12 wherein the flexible reinforcement structure comprises a polymeric material, a resin, a laminate, or a combination thereof.
16. The semiconductor device of claim 12 wherein the flexible reinforcement structure comprises at least one structural element embedded in a matrix material.
17. The semiconductor device of claim 16 wherein the at least one structural element comprises a weave or a fiber.
18. The semiconductor device of claim 16 wherein the at least one structural element is made of carbon or glass, and wherein the matrix material is a polymer or a resin.
19. The semiconductor device of claim 12 , further comprising a mold material around at least a portion of the semiconductor die, wherein at least a portion of the flexible reinforcement structure is attached to the mold material.
20. The semiconductor device of claim 12 , wherein the flexible reinforcement structure is molded or cured to the first surface of the semiconductor die.