Semiconductor devices with flexible reinforcement structure
Methods for manufacturing semiconductor devices having a flexible reinforcement structure, and associated systems and devices, are disclosed herein. In one embodiment, a method of manufacturing a semiconductor device includes electrically coupling at least one semiconductor die to a redistribution structure on a first carrier. The semiconductor die can include a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure. The method also includes reducing a thickness of the semiconductor die to no more than 10 μm. The method further includes coupling a flexible reinforcement structure to the second surface of the at least one semiconductor die.
1. A method of manufacturing a semiconductor device, the method comprising:
electrically coupling a semiconductor die to a redistribution structure on a first carrier, the semiconductor die including a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure;
reducing a thickness of the semiconductor die to no more than 10 μm;
coupling a flexible reinforcement structure to the second surface of the semiconductor die;
coupling the flexible reinforcement structure to a second carrier; and
separating the redistribution structure from the first carrier.
2. The method of claim 1 , further comprising:
separating the flexible reinforcement structure from the second carrier; and
electrically coupling the semiconductor die to a flexible circuit via an array of electrical connectors.
3. The method of claim 1 wherein the flexible reinforcement structure comprises a polymeric material, a resin, a laminate, or a film.
4. The method of claim 1 wherein the flexible reinforcement structure comprises a weave or a fiber, wherein the weave or the fiber are embedded in a matrix comprised of polymer or resin.
5. The method of claim 4 , wherein the weave or the fiber are comprised of carbon or glass.
6. The method of claim 1 , wherein the semiconductor die comprises a plurality of semiconductor dies, the method further comprising:
singulating the plurality of semiconductor dies into a plurality of individual semiconductor devices.
7. The method of claim 1 , wherein the first carrier and the redistribution structure are coupled by a release layer between the first carrier and the redistribution structure, the method further comprising:
separating the first carrier from the redistribution structure by dissolving the release layer or debonding the release layer from the redistribution structure.
8. The method of claim 1 , further comprising:
forming a mold material over the semiconductor die and the redistribution structure,
wherein reducing the thickness of the semiconductor die includes removing a portion of the mold material to expose the second surface of the semiconductor die.
9. A method of manufacturing a semiconductor device, the method comprising:
electrically coupling a first semiconductor die to a redistribution structure on a first carrier, the first semiconductor die including a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure;
reducing a thickness of the first semiconductor die to no more than 10 μm;
coupling a flexible reinforcement structure to the second surface of the first semiconductor die; and
coupling a second semiconductor die to the first surface of the first semiconductor die, wherein the second semiconductor die is positioned between the first semiconductor die and the redistribution structure.
10. The method of claim 9 , further comprising:
coupling the redistribution structure and the first semiconductor die to a flexible circuit.
11. The method of claim 9 wherein the flexible reinforcement structure comprises a weave or a fiber, wherein the weave or the fiber are embedded in a matrix comprised of polymer or resin.
12. The method of claim 9 , wherein the first semiconductor die comprises a plurality of semiconductor dies, the method further comprising:
singulating the plurality of semiconductor dies into a plurality of individual semiconductor devices.
13. The method of claim 9 , wherein the first carrier and the redistribution structure are coupled by a release layer between the first carrier and the redistribution structure, the method further comprising:
separating the first carrier from the redistribution structure by dissolving the release layer or debonding the release layer from the redistribution structure.
14. The method of claim 9 , further comprising:
forming a mold material over the first semiconductor die and the redistribution structure,
wherein reducing the thickness of the first semiconductor die includes removing a portion of the mold material to expose the second surface of the first semiconductor die.
15. A method of manufacturing a semiconductor device, the method comprising:
electrically coupling a semiconductor die to a redistribution structure on a first carrier, the semiconductor die including a first surface facing the redistribution structure and a second surface spaced apart from the redistribution structure;
reducing a thickness of the semiconductor die to no more than 10 μm;
coupling a first flexible reinforcement structure to the second surface of the semiconductor die; and
coupling a second flexible reinforcement structure to the first flexible reinforcement structure.
16. The method of claim 15 , wherein the first flexible reinforcement structure comprises a weave or a fiber, wherein the weave or the fiber are embedded in a matrix comprised of polymer or resin.
17. The method of claim 15 , wherein the semiconductor die comprises a plurality of semiconductor dies, the method further comprising:
singulating the plurality of semiconductor dies into a plurality of individual semiconductor devices.
18. The method of claim 15 , wherein the first carrier and the redistribution structure are coupled by a release layer between the first carrier and the redistribution structure, the method further comprising:
separating the first carrier from the redistribution structure by dissolving the release layer or debonding the release layer from the redistribution structure.
19. The method of claim 15 , further comprising:
forming a mold material over the semiconductor die and the redistribution structure,
wherein reducing the thickness of the semiconductor die includes removing a portion of the mold material to expose the second surface of the semiconductor die.
20. The method of claim 15 , wherein the first flexible reinforcement structure has a thickness of no more than 10 μm.