Semiconductor package structure with antenna
A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.
1. A semiconductor package structure, comprising:
a semiconductor die;
a first redistribution layer (RDL) structure formed on a non-active surface of the semiconductor die;
a ground layer formed in the first RDL structure;
a second RDL structure formed on the first RDL structure;
a first molding compound layer formed on the second RDL structure; and
a first antenna, comprising:
a first antenna element formed in the second RDL structure; and
a second antenna element formed on the first molding compound layer,
wherein each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.
2. The semiconductor package structure as claimed in claim 1 , wherein the first molding compound layer includes a curable polymer.
3. The semiconductor package structure as claimed in claim 1 , further comprising:
a third RDL structure formed on and electrically coupled to an active surface of the semiconductor die;
a second molding compound layer surrounding the semiconductor die; and
a second antenna formed in the second molding compound layer and electrically coupled to the second RDL structure.
4. The semiconductor package structure as claimed in claim 3 , further comprising:
a first through via structure formed in the second molding compound layer and electrically coupled between the ground layer and the third RDL structure;
a second through via structure formed in the second molding compound layer and electrically coupled to the third RDL structure; and
a third through via structure formed in the second RDL structure and electrically coupled between the first antenna element and the second through via structure.
5. The semiconductor package structure as claimed in claim 3 , wherein the first antenna is a patch antenna and the second antenna is a dipole antenna.
6. The semiconductor package structure as claimed in claim 3 , further comprising a plurality of conductive structures electrically coupled to the semiconductor die via the third RDL structure.
7. The semiconductor package structure as claimed in claim 3 , wherein the first antenna element has a second portion adjoining the first portion, and wherein the ground layer has a plurality of through-openings respectively overlapping the second portion of the first antenna element as viewed from a top-view perspective.
8. The semiconductor package structure as claimed in claim 1 , wherein the second RDL structure comprises an inter-metal dielectric (IMD) layer and conductive traces formed in the IMD layer.
9. The semiconductor package structure as claimed in claim 8 , wherein the IMD layer is a single layer or a multi-layer structure.
10. The semiconductor package structure as claimed in claim 9 , wherein the IMD layer includes one or more through via structures.
11. The semiconductor package structure as claimed in claim 10 , wherein a first through via structure of the one or more through via structures electrically couples the first antenna element and the first RDL structure.
12. The semiconductor package structure as claimed in claim 1 , further comprising a dielectric layer or adhesion layer between the first molding compound layer and the second RDL structure.
13. The semiconductor package structure as claimed in claim 12 , comprising the dielectric layer between the first molding compound layer and the second RDL structure, wherein the dielectric layer includes polyimide, silicon nitride or silicon oxynitride.