Organometallic cluster photoresists for EUV lithography
The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.
1. A method for forming a patterned structure, comprising:
depositing a photoresist layer over a material layer, wherein the photoresist layer comprises a hexameric cluster having the following structure:
wherein:
R 1 is alkyl or optionally substituted aryl,
Y is carbonyl or optionally substituted alkylene, and
R 2 is substituted aryl or optionally substituted heteroaryl;
exposing the photoresist layer to a predetermined pattern to create a plurality of exposed regions and unexposed regions; and
developing the photoresist layer to form a patterned photoresist layer.
2. The method of claim 1 , wherein depositing the photoresist layer comprises applying a photoresist composition over the material layer, wherein the photoresist composition comprises the hexameric cluster and a solvent.
3. The method of claim 1 , wherein:
R 1 is butyl;
Y is carbonyl or methylene; and
R 2 has one of the following structures:
4. The method of claim 1 , wherein exposing the photoresist layer to the predetermined pattern comprises exposing the photoresist layer to a radiation beam.
5. The method of claim 1 , wherein exposing the photoresist layer to the predetermined pattern comprises exposing the photoresist layer to an extreme ultraviolet radiation beam.
6. The method of claim 1 , wherein developing the photoresist layer comprises applying a developer comprising methanol, xylene, 4-methyl-2-pentanol, or 2-heptanone.
7. The method of claim 1 , further comprising etching the material layer using the patterned photoresist layer as an etch mask.
8. The method of claim 1 , further comprising removing the patterned photoresist layer by a dry etch using a Cl 2 gas.
9. A method for lithograph patterning, comprising:
applying a photoresist composition over the material layer disposed on a substrate to form a photoresist layer, wherein the photoresist composition comprises a solvent and a hexameric cluster having the following structure:
wherein:
R 1 is alkyl or optionally substituted aryl,
Y is carbonyl or optionally substituted alkylene, and
R 2 is substituted aryl or optionally substituted heteroaryl;
patterning the photoresist layer to form a patterned photoresist layer; and
etching the material layer using the patterned photoresist layer as a mask.
10. The method of claim 9 , wherein:
R 1 is butyl;
Y is carbonyl or methylene; and
R 2 has one of the following structures:
11. The method of claim 9 , wherein the solvent comprises methanol, 4-methyl-2-pentano, toluene, xylene, or combinations thereof.
12. The method of claim 9 , wherein an amount of the compound in the photoresist composition is from 0.5 wt. % to about 10 wt. %.
13. The method of claim 9 , wherein patterning the photoresist layer comprising:
exposing the photoresist layer to a radiation beam through a photomask having a predefined pattern; and
applying a developer to a surface of the photoresist layer.
14. The method of claim 13 , wherein exposing the photoresist layer to a radiation beam comprises exposing the photoresist layer to an extreme ultraviolet beam.
15. The method of claim 9 , wherein etching the material layer comprises performing an etching process using a fluorine-containing gas, a bromine-containing gas, an oxygen-containing gas, an iodine-containing gas or combinations thereof.
16. The method of claim 9 , further comprising performing a bake process to remove the solvent from the photoresist layer.
17. A method for lithography patterning, comprising:
depositing a material layer on a substrate;
depositing a photoresist layer on the material layer, wherein the photoresist layer comprises a hexameric cluster having the following structure:
wherein:
R 1 is alkyl or optionally substituted aryl,
Y is carbonyl or optionally substituted alkylene, and
R 2 is substituted aryl or optionally substituted heteroaryl;
exposing the photoresist layer to an extreme ultraviolet radiation beam to create a plurality of exposed regions and unexposed regions;
developing the photoresist layer to form a patterned photoresist layer; and
removing portions of the material layer not covered by the patterned photoresist layer.
18. The method of claim 17 , wherein:
R 1 is butyl;
Y is carbonyl or methylene; and
R 2 has one of the following structures:
19. The method of claim 17 , wherein exposing the photoresist layer to the extreme ultraviolet radiation beam forms tin oxide in the exposed regions.
20. The method of claim 17 , wherein the material layer comprises silicon dioxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon boronitride, silicon borocarbide, a spin-on-carbon (SOC), or combinations thereof.