Magnetic device with a hybrid free layer stack
In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.
1. A magnetic device, comprising:
a seed layer;
a first free magnetic layer provided on the seed layer, wherein the seed layer is configured to provide Dzyaloshinskii-Moriya Interaction at an interface with the first free magnetic layer;
an interlayer provided on the first free magnetic layer;
a second free magnetic layer provided on the interlayer,
wherein the first free magnetic layer and the second free magnetic layer are ferromagnetically coupled across the interlayer through exchange interaction;
a tunnel barrier provided on the second free magnetic layer; and
a fixed magnetic layer.
2. The magnetic device according to claim 1 , wherein the interlayer comprises a heavy-metal layer or a heavy-metal-transition-metal alloy layer.
3. The magnetic device according to claim 1 , wherein the fixed magnetic layer comprises a synthetic antiferromagnetic-based layer.
4. The magnetic device according to claim 1 , wherein the second free magnetic layer comprises a CoFeB-based layer and/or a FeB-based layer.
5. The magnetic device according to claim 1 , wherein the tunnel barrier comprises a MgO-based layer.
6. The magnetic device according to claim 1 , wherein the first free magnetic layer comprises an intrinsic perpendicular magnetic anisotropy layer formed of at least one of: a FePt alloy, a Pt/Co alloy, a Co/Ni alloy, and a CoPd alloy.
7. The magnetic device according to claim 1 , wherein the first free magnetic layer comprises an intrinsic perpendicular magnetic anisotropy layer formed of synthetic antiferromagnetic Co/Ru/Co multilayers and/or Co/Ni/Ru/Co/Ni multilayers and/or ferrimagnetic materials comprising a GdCo alloy and/or a TbCo alloy.
8. The magnetic device according to claim 1 , wherein the seed layer comprises a heavy-metal layer formed of Pt, W, Hf, or Ta, and/or comprises a topological insulator layer formed of Bi 2 Se 3 , Bi 2 Te 3 , Sb 2 Te 3 , or BiSb.
9. The magnetic device according to claim 1 , wherein two or more exposed layer stacks are structured from one of:
the fixed magnetic layer;
the fixed magnetic layer and the tunnel barrier; and
the fixed magnetic layer, the tunnel barrier, and the second free magnetic layer.
10. The magnetic device according to claim 9 , wherein the interlayer, the first free magnetic layer, and the seed layer are continuous between the two or more exposed layer stacks.
11. The magnetic device according to claim 9 , comprising:
four or more terminals,
wherein two terminals are connected to the seed layer, and
wherein one terminal is connected to individual ones of the two or more exposed layer stacks.
12. The magnetic device according to claim 1 , wherein the magnetic device is a memory device.
13. The magnetic device according to claim 1 , wherein the magnetic device is a domain wall logic device.
14. A method of manufacturing a magnetic device, wherein the method comprises:
providing a seed layer;
providing a first free magnetic layer on the seed layer, wherein the seed layer is configured to provide Dzyaloshinskii-Moriya Interaction at an interface with the first free magnetic layer;
providing an interlayer on the first free magnetic layer;
providing a second free magnetic layer on the interlayer,
wherein the first free magnetic layer and the second free magnetic layer are ferromagnetically coupled across the interlayer through exchange interaction;
providing a tunnel barrier on the second free magnetic layer; and
providing a fixed magnetic layer.
15. The magnetic device according to claim 1 , wherein a thickness of the interlayer is in a range of 0.1-1 nm.
16. The magnetic device according to claim 12 , wherein the memory device is a magnetic domain wall racetrack memory device.
17. The magnetic device according to claim 13 , wherein the domain wall logic device is a spin torque majority gate device.
18. The method according to claim 14 , further comprising structuring two or more exposed layer stacks comprising one of:
the fixed magnetic layer;
the fixed magnetic layer and the tunnel barrier; and
the fixed magnetic layer, the tunnel barrier, and the second free magnetic layer.
19. The method according to claim 18 , wherein the interlayer, the first free magnetic layer, and the seed layer are continuous between the two or more exposed layer stacks.
20. The method according to claim 19 , further comprising:
providing four or more terminals,
wherein two terminals are connected to the seed layer, and
wherein one terminal is connected to individual ones of the two or more exposed layer stacks.
21. A magnetic device, comprising:
a seed layer;
a first free magnetic layer provided on the seed layer;
an interlayer provided on the first free magnetic layer, wherein the first free magnetic layer comprises an intrinsic perpendicular magnetic anisotropy layer formed of a FePt alloy, a Pt/Co alloy, a Co/Ni alloy, a CoPd alloy, Co/Ru/Co multilayers, Co/Ni/Ru/Co/Ni multilayers, a GdCo alloy, and/or a TbCo alloy;
a second free magnetic layer provided on the interlayer,
wherein the first free magnetic layer and the second free magnetic layer are ferromagnetically coupled across the interlayer through exchange interaction;
a tunnel barrier provided on the second free magnetic layer; and
a fixed magnetic layer.