Resistive random-access memory

1. A method, comprising:

forming a memory component on a substrate, wherein a first shape comprises one or more pointed edges formed on a first surface of the memory component, wherein the one or more-pointed edges of the first shape are formed employing an oxide material; and

forming a transistor on the substrate and electrically coupled to the memory component to share operating voltage, wherein the operating voltage applied to the transistor flows to the memory component.

2. The method of claim 1 , further comprising:

covering the memory component and the transistor with a dielectric layer.

3. The method of claim 1 , further comprising:

covering the memory component and the transistor with a dielectric layer and

covering the dielectric layer with a metal gate.

4. The method of claim 1 , further comprising:

forming a dielectric layer that covers the memory component;

forming a metal gate that covers the dielectric layer; and

forming a top spacer layer that covers the metal gate.

5. The method of claim 1 , further comprising:

forming a source region at a second portion of the memory component and the transistor, wherein the source region comprises a first material that electrically couples the memory component to the transistor.

6. The method of claim 5 , wherein the first material comprises a semiconductor material selected from a group consisting of a silicon, an alloy, a germanium, a III-V compound semiconductor, and a II-IV semiconductor.

7. The method of claim 1 , wherein the memory component is a resistive random-access memory component.

8. The method of claim 1 , wherein the transistor is a vertical field-effect transistor.

9. A method, comprising:

forming a transistor and a memory component on a substrate;

forming a source region at a second portion of the memory component and the transistor, wherein the source region comprises a first material that electrically couples the memory component and the transistor, and wherein operating voltage applied to the transistor flows to the memory component; and

forming a dielectric layer that covers the memory component and the transistor.

10. The method of claim 9 , further comprising:

forming one or more-pointed edges on a first surface of memory component employing an oxide material.

11. The method of claim 9 , further comprising:

forming a metal gate that covers the dielectric layer.

12. The method of claim 11 , further comprising:

forming a top spacer layer that covers the metal gate.

13. The method of claim 9 , wherein the memory component is a resistive random-access memory component.

14. The method of claim 9 , wherein the transistor is a vertical field-effect transistor.

15. The method of claim 9 , wherein the first material comprises a semiconductor material selected from a group consisting of a silicon, an alloy, a germanium, a III-V compound semiconductor, and a II-IV semiconductor.

16. A device, comprising:

a memory component formed on a substrate, wherein a first shape comprising one or more pointed edges is formed on a first top surface of the memory component, wherein the one or more-pointed edges of the first shape are formed comprising an oxide material; and

a transistor formed on the substrate and electrically coupled to the memory component to share operating voltage, wherein the operating voltage applied to the transistor flows to the memory component.

17. The device of claim 16 , further comprising:

a dielectric layer that covers the memory component and the transistor.

18. The device of claim 16 , further comprising:

a dielectric layer that covers the memory component and the transistor; and

a metal gate that covers the dielectric layer.

19. The device of claim 16 , wherein the memory component is a resistive random-access memory component.

20. The device of claim 16 , wherein the transistor is a vertical field-effect transistor.