Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
1. A microelectromechanical (“MEMS”) force sensor, comprising:
a sensor die configured to receive an applied force;
a piezoresistive sensing element on the sensor die, wherein the piezoresistive sensing element is configured to convert a strain to a first analog electrical signal that is proportional to the strain;
a piezoelectric sensing element on the sensor die at least partially overlapping a solder bump, wherein the piezoelectric sensing element is configured to convert a change in strain to a second analog electrical signal that is proportional to the change in strain; and
circuitry arranged in the sensor die, wherein the circuitry is configured to convert the first analog electrical signal and the second analog electrical signal to respective digital electrical output signals.
2. The MEMS force sensor of claim 1 , wherein:
the sensor die comprises a plurality of substrates bonded together;
the piezoresistive sensing element is on a first substrate of the sensor die; and
the piezoelectric sensing element is on the first substrate of the sensor die and at least partially overlaps the solder bump.
3. The MEMS force sensor of claim 1 , wherein:
the sensor die comprises a plurality of substrates bonded together;
the piezoresistive sensing element is on a first substrate of the sensor die; and
the piezoelectric sensing element is on a second substrate of the sensor die and at least partially overlaps the solder bump.
4. The MEMS force sensor of claim 1 , wherein the piezoresistive sensing element at least partially overlaps a solder ball.
5. The MEMS force sensor of claim 1 , wherein the piezoresistive sensing element comprises one of:
a p-type piezoresistive sensing element formed on an n-type substrate;
a p-type piezoresistive sensing element formed in an n-type well on a p-type substrate
an n-type piezoresistive sensing element formed on a p-type substrate; or
an n-type piezoresistive sensing element formed in a p-type well on an n-type substrate.
6. The MEMS force sensor of claim 1 , wherein the piezoelectric sensing element comprises a piezoelectric layer between opposing electrodes.
7. The MEMS force sensor of claim 6 , wherein the piezoelectric layer comprises at least one of aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), barium titanate (BaTiO3), sodium potassium niobate (KNN), or polyvinylidene fluoride (PVDF).
8. A method for manufacturing a microelectromechanical (“MEMS”) force sensor, comprising:
forming a piezoresistive sensing element and a piezoelectric sensing element on a first substrate;
forming circuitry on a second substrate;
bonding the first substrate and the second substrate to form a sensor die;
forming a through hole in the first substrate and in at least a portion of the second substrate; and
creating an electrical connection between at least one of the piezoresistive sensing element or the piezoelectric sensing element formed on the first substrate and the circuitry formed on the second substrate via the through hole.
9. The method of claim 8 , further comprising:
prior to bonding the first substrate to the second substrate, bonding a carrier substrate to the first substrate; and
removing the carrier substrate after the sensor die is formed.
10. The method of claim 8 , wherein creating the electrical connection between at least one of the piezoresistive sensing element or the piezoelectric sensing element formed on the first substrate and the circuitry formed on the second substrate via the through hole comprises:
forming an isolation layer or a barrier layer on at least a portion of a surface of the sensor die; and
forming a metal layer on at least a portion of a surface of the isolation layer or the barrier layer.
11. The method of claim 10 , further comprising:
forming a polymer layer on the sensor die, wherein the polymer layer covers the isolation/barrier layer and the metal layer;
etching the polymer layer to form an under bump metallization (UBM) layer;
forming a second metal layer on the UBM layer; and
forming a solder ball on the second metal layer.
12. The method of claim 8 , further comprising at least one of:
forming a solder ball over the sensor die such that the solder ball at least partially overlaps the piezoelectric sensing element; or
forming a solder ball over the sensor die such that the solder ball at least partially overlaps the piezoresistive sensing element.
13. The method of claim 8 , wherein:
the piezoresistive sensing element comprises a lightly doped region formed between at least two heavily doped regions; and
the piezoresistive sensing element is formed by diffusion or implantation.
14. A method for manufacturing a microelectromechanical (“MEMS”) force sensor, comprising:
forming a piezoelectric sensing element on a first substrate;
forming a piezoresistive sensing element and circuitry on a second substrate;
bonding the first substrate and the second substrate to form a sensor die;
forming a through hole in the first substrate and at least a portion of the second substrate; and
creating an electrical connection between the piezoelectric sensing element formed on the first substrate and the circuitry formed on the second substrate via the through hole.
15. The method of claim 14 , wherein bonding the first substrate and the second substrate to form the sensor die comprises bonding, using a lower temperature fusion bonding process, the first substrate, and the second substrate to form the sensor die.
16. The method of claim 14 , wherein creating the electrical connection between the piezoelectric sensing element formed on the first substrate and the circuitry formed on the second substrate via the through hole comprises:
forming an isolation/barrier layer on at least a portion of a surface of the sensor die; and
forming a metal layer on at least a portion of a surface of the isolation/barrier layer.
17. The method of claim 16 , further comprising:
forming a polymer layer on the sensor die, wherein the polymer layer covers the isolation/barrier layer and the metal layer;
etching the polymer layer to form an under bump metallization (UBM) layer;
forming a second metal layer on the UBM layer; and
forming a solder ball on the second metal layer.
18. The method of claim 14 , further comprising at least one of:
forming a solder ball over the sensor die such that the solder ball at least partially overlaps the piezoelectric sensing element; or
forming a solder ball over the sensor die such that the solder ball at least partially overlaps the piezoresistive sensing element.
19. The method of claim 14 , further comprising:
prior to bonding the first substrate to the second substrate, bonding a carrier substrate to the second substrate; and
removing the carrier substrate after the first substrate is bonded to the second substrate.
20. The method of claim 14 , wherein forming the piezoresistive sensing element on the surface of the second substrate comprises forming a lightly doped region between at least two heavily doped regions in the second substrate.