Memory device and programming method thereof

1. A method for programming a memory device comprising a first plane and a second plane, the method comprising:

simultaneously initiating programming of the first plane and the second plane by setting a main signal shared by the first plane and the second plane to a logic high; and

in response to the first plane being successfully programmed and the second plane not being successfully programmed, suspending the programming of the first plane, and keeping the programming of the second plane by setting a suspension signal of the first plane to a logical low while maintaining the main signal at the logic high.

2. The method of claim 1 , wherein suspending the programming of the first plane comprises at least one of:

blocking a plane selection signal;

blocking a block selection signal;

deselecting all word lines of the first plane; or

deselecting all bit lines of the first plane.

3. The method of claim 1 , further comprising:

simultaneously initiating programming of one or more first memory cells of the first plane and one or more second memory cells of the second plane; and

in response to less than a preset number of the first memory cells not being programmed successfully, and more than the preset number of the second memory cells not being programmed successfully, suspending the programming of the first memory cells, and keeping programming of the second memory cells.

4. The method of claim 3 , wherein a first programming process for the first memory cells and a second programming process for the second memory cells are initiated simultaneously but end non-simultaneously.

5. The method of claim 4 , further comprising:

simultaneously initiating programming of one or more third memory cells of the first plane and one or more fourth memory cells of the second plane after the first programming process and the second programming process are finished,

wherein the first memory cells are followed by third memory cells, and the second memory cells are followed by the fourth memory cells.

6. The method of claim 3 , wherein

the first memory cells correspond to a first programming pulse count;

the second memory cells correspond to a second programming pulse count; and

the first programming pulse count is less than the second programming pulse count.

7. The method of claim 6 , further comprising:

reporting a programming failure for the second plane in response to the second programming pulse count is larger than a predetermined programming pulse count.

8. The method of claim 3 , further comprising:

verifying whether the first memory cells and the second memory cells are programmed successfully, wherein a first number of times for the first memory cells to be verified is less than a second number of times for the second memory cells to be verified.

9. A memory device, comprising:

a first plane;

a second plane; and

a control circuit coupled to the first plane and the second plane, and configured to:

simultaneously initiate programming of the first plane and the second plane by setting a main signal shared by the first plane and the second plane to a logic high; and

in response to the first plane being successfully programmed and the second plane not being successfully programmed, suspend the programming of the first plane, and keep the programming of the second plane by setting a suspension signal of the first plane to a logical low while maintaining the main signal at the logic high.

10. The memory device of claim 9 , wherein to suspend the programming of the first plane, the control circuit is further configured to perform at least one of:

blocking a plane selection signal;

blocking a block selection signal;

deselecting all word lines of the first plane; or

deselecting all bit lines of the first plane.

11. The memory device of claim 9 , wherein the control circuit is further configured to:

simultaneously initiate programming of one or more first memory cells of the first plane and one or more second memory cells of the second plane; and

in response to less than a preset number of the first memory cells not being programmed successfully, and more than the preset number of the second memory cells not being programmed successfully, suspend the programming of the first memory cells, and keep programming of the second memory cells.

12. The memory device of claim 11 , wherein a first programming process for the first memory cells and a second programming process for the second memory cells are initiated simultaneously but end non-simultaneously.

13. The memory device of claim 12 , wherein the control circuit is further configured to:

simultaneously initiate programming of one or more third memory cells of the first plane and one or more fourth memory cells of the second plane after the first programming process and the second programming process are finished,

wherein the first memory cells are followed by third memory cells, and the second memory cells are followed by the fourth memory cells.

14. The memory device of claim 11 , wherein

the first memory cells correspond to a first programming pulse count;

the second memory cells correspond to a second programming pulse count; and

the first programming pulse count is less than the second programming pulse count.

15. The memory device of claim 14 , wherein the control circuit is further configured to:

report a programming failure for the second plane in response to the second programming pulse count is larger than a predetermined programming pulse count.

16. The memory device of claim 11 , wherein the control circuit is further configured to:

verify whether the first memory cells and the second memory cells are programmed successfully, wherein a first number of times for the first memory cells to be verified is less than a second number of times for the second memory cells to be verified.