Method for etching or deposition

1. A method comprising exposing a substrate to WOCl 4 and a reducing gas in a reaction zone under:

(a) a first set of process conditions to controllably etch a substrate, wherein the substrate comprises an Al 2 O 3 film;

(b) a second set of process conditions to controllably deposit tungsten onto a surface of the substrate, wherein the substrate comprises a film chosen from Al 2 O 3 , HfO 2 , ZrO 2 , W, Mo, Co, Ru, Ir, Cu, SiN, TiN, and SiO 2 films; or

(c) a third set of process conditions to selectively deposit tungsten onto metal conducting W, Mo, Co, Ru, Ir, or Cu substrates, but not onto a neighboring nitride or dielectric oxide film, wherein the neighboring nitride or dielectric oxide film is adjacent to a metal conducting substrate of the metal conducting substrates.

2. The method of claim 1 , wherein the first set of process conditions comprise a substrate temperature range of about 200° C. to about 1000° C., a WOCl 4 concentration of about 1200 ppm to about 20,000 ppm, and pressure of about 0.5 to about 500 Torr.

3. The method of claim 1 , wherein the second set of process conditions comprise a substrate temperature range of about 200° C. to about 1000° C., a WOCl 4 concentration of about 5 ppm to about 1200 ppm, and pressure of about 0.5 to about 500 Torr.

4. The method of claim 1 , wherein the third set of process conditions comprise a substrate temperature range of about 200° C. to about 1000° C., a WOCl 4 concentration of about 5 ppm to about 1200 ppm, a pressure of about 0.5 to about 500 Torr and a multitude of substrates including a conductive film substrate and a neighboring nitride or dielectric oxide film substrate, whereby tungsten metal is only deposited on the conducting metal film substrate, but not onto h neighboring nitride or dielectric oxide film substrate.

5. The method of claim 1 , wherein the reducing gas is chosen from hydrogen, hydrazine, or an alkylated hydrazine.

6. The method of claim 2 wherein the reducing gas is hydrogen, and the hydrogen is fed into the reaction zone at a rate of about 0.1 to about 10 liters per minute.

7. A method comprising exposing a substrate comprising a film chosen from Al 2 O 3 and SiO 2 films, to (i) WOCl 4 along with a carrier gas delivered from a precursor ampoule, and (ii) a reducing gas, in a reaction zone, wherein the pressure in the reaction zone is about 0.5 to 500 Torr; the substrate temperature is about 200° C. to 1000° C., the reducing gas flow rate is about 0.1 to 10 liters per minute, the carrier gas flow is from about 0.001 to 1 liters per minute, the concentration of WOCl 4 in the reaction zone is greater than 1000 ppm, and the precursor ampoule temperature is about 10° C. to about 180° C., whereby the substrate comprising a film chosen from Al 2 O 3 and SiO 2 films is etched.

8. The method of claim 7 , wherein the concentration of WOCl 4 in the reaction zone is about 1000 ppm to about 10,000 ppm.

9. The method of claim 7 , wherein said substrate is sequentially

(i) exposed to WOCl 4 precursor, followed by

(ii) purging by vacuum or an inert gas, followed by

(iii) exposure to a reducing gas, followed by

(iv) purging by vacuum or an inert gas and repeating the sequence of (i) through (iv), until a desired amount of etching on the substrate has occurred.

10. The method of claim 7 , wherein said substrate is exposed to a continuous flow of WOCl 4 precursor and reducing gas.

11. The method of claim 7 , wherein said substrate is exposed to a continuous flow of reducing gas, while WOCl 4 precursor is pulsed into the reaction zone for predetermined periods of time.

12. The method of claim 7 , wherein the concentration of WOCl 4 precursor in the reaction zone is about 2000 ppm to about 5000 ppm.

13. The method of claim 7 , wherein the substrate temperature is about 300° C. to about 450° C.

14. A method comprising exposing a substrate comprising a film chosen from Al 2 O 3 and SiO 2 films, to

(i) WOCl 4 along with a carrier gas delivered from a precursor ampoule, and

(ii) a reducing gas, in a reaction zone,

wherein the pressure in the reaction zone is about 0.5 Torr to 500 Torr; the substrate temperature is about 200° C. to 1000° C., the reducing gas flow rate is about 0.1 to 10 liters per minute, the carrier gas flow is from about 0.001 to 1 liters per minute, the concentration of WOCl 4 is less than 1000 ppm, and the precursor ampoule temperature is about 10° C. to about 180° C.,

whereby tungsten is deposited onto the surface of the substrate comprising a film chosen from Al 2 O 3 and SiO 2 films.

15. The method of claim 14 , wherein the concentration of WOCl 4 in the reaction zone is about 75 ppm to about 1000 ppm.

16. The method of claim 14 , wherein the WOCl 4 precursor is pulsed into the reaction zone for a period of 0.05 to about 20 seconds, followed by an off period of 0.05 to about 120 seconds, and repeated for a desired number of pulses until a desired amount of deposition has occurred on the substrate.

17. The method of claim 16 , wherein the WOCl 4 precursor is pulsed into the reaction zone for a period of 0.1 to about 10 seconds, followed by an off period of 1 to about 60 seconds.

18. The method of claim 14 , wherein, said substrate is sequentially

(i) exposed to WOCl 4 precursor, followed by

(ii) purging by vacuum or an inert gas, followed by

(iii) exposure to a reducing gas, followed by

(iv) purging by vacuum or an inert gas, and repeating the sequence of (i) through (iv), until a desired amount of deposition of Tungsten on the substrate has occurred.

19. The method of claim 14 , wherein said exposure is, wherein said substrate is exposed to a continuous flow of WOCl 4 precursor and reducing gas.