IP Library › Granted Patent US 11,626,554
Granted Patent B2
US 11,626,554 · App. 17/895,067 · Granted Apr 11, 2023

Light emitting device having a stacked structure

Inventors: Jong Min Jang (Ansan-si, KR); Chang Yeon Kim (Ansan-si, KR)
Assignee: Seoul Viosys Co., Ltd.
H01L33/62H01L27/15H01L33/24H01L33/50
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Quick Facts
Patent No.
US 11,626,554
App. No.
17/895,067
Granted
Apr 11, 2023
Kind
B2
Abstract

A light emitting device including a first light emitting part, a second light emitting part, and a third light emitting part each including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer therebetween, a first contact member electrically contacting a first surface of the n-type semiconductor layer of the second light emitting part; and a second contact member electrically contacting the n-type semiconductor layer of the third light emitting part, in which the first contact member extends to the first light emitting part to electrically contact the n-type semiconductor layer of the first light emitting part, the first contact member and the second contact member overlap one another, and the second contact member has a width that gradually decreases in a downward direction.

Claims (61)

1. A light emitting device comprising:

a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer;

a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface;

a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer;

a first contact member electrically contacting the first surface of the second n-type semiconductor layer; and

a second contact member electrically contacting the third n-type semiconductor layer,

wherein:

the first contact member extends to the first light emitting part to electrically contact the first n-type semiconductor layer;

the first contact member and the second contact member overlap one another; and

the second contact member has a width that gradually decreases in a downward direction.

2. The light emitting device of claim 1 , wherein:

the first contact member includes a first contact structure and a second contact structure extending in opposite directions;

the second contact member includes a third contact structure; and

the first surface of the first light emitting part faces the downward direction.

3. The light emitting device of claim 2 , wherein the first contact structure extends into the first light emitting part, the second contact structure extends into the second light emitting part, and the third contact structure extends into the third light emitting part.

4. The light emitting device of claim 1 , wherein the first contact member has a greater thickness than the second contact member.

5. The light emitting device of claim 1 , wherein a total surface area of the first light emitting part is greater than those of the second and third light emitting parts, and a total surface area of the second light emitting part is greater than that of the third light emitting part.

6. The light emitting device of claim 1 , further comprising:

a common pad electrically coupled with the first, second, and third n-type semiconductor layers;

a first pad electrically coupled with the first p-type semiconductor layer;

a second pad electrically coupled with the second p-type semiconductor layer; and

a third pad electrically coupled with the third p-type semiconductor layer,

wherein the first, second, and third n-type semiconductor layers are electrically coupled with one another by the first and the second contact members.

7. The light emitting device of claim 6 , further comprising a first transparent electrode disposed on the first p-type semiconductor layer and electrically connected to the first pad, a second transparent electrode disposed on the second p-type semiconductor layer and electrically connected to the second pad, and a third transparent electrode disposed on the third p-type semiconductor layer and electrically connected to the third pad.

8. The light emitting device of claim 7 , wherein each of the first, second, and third transparent electrodes is disposed between a first plane on which the first contact member is formed and a second plane on which the second contact member is formed.

9. The light emitting device of claim 1 , wherein the first, second, and third light emitting parts are configured to emit light having different peak wavelengths from each other.

10. The light emitting device of claim 1 , further comprising a substrate disposed on a second surface of the first light emitting part opposing the first surface thereof.

11. A light emitting device comprising:

a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer;

a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface;

a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer;

a first contact member electrically connected to the first surface of the second n-type semiconductor layer; and

a second contact member electrically connected to the third n-type semiconductor layer,

wherein:

the first contact member extends to the first light emitting part to electrically contact the first n-type semiconductor layer;

the first light emitting part and the second light emitting part are bonded to each other by an adhesion layer; and

the second contact member has a width that gradually decreases in a downward direction.

12. The light emitting device of claim 11 , wherein:

the first contact member includes a first contact structure and a second contact structure extending in opposite directions;

the second contact member includes a third contact structure; and

the first surface of the first light emitting part faces the downward direction.

13. The light emitting device of claim 11 , wherein the first contact member has a greater thickness than the second contact member.

14. The light emitting device of claim 11 , wherein a total surface area of the first light emitting part is greater than those of the second and third light emitting parts, and a total surface area of the second light emitting part is greater than that of the third light emitting part.

15. The light emitting device of claim 11 , further comprising a first transparent electrode disposed on the first p-type semiconductor layer, a second transparent electrode disposed on the second p-type semiconductor layer, and a third transparent electrode disposed on the third p-type semiconductor layer,

wherein each of the first, second, and third transparent electrodes is disposed between a first plane on which the first contact member is formed and a second plane on which the second contact member is formed.

16. A light emitting device comprising:

a first light emitting part including a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer;

a second light emitting part disposed on a first surface of the first light emitting part, and including a second n-type semiconductor layer, a second active layer, and a second p-type semiconductor layer, the second n-type semiconductor layer having a first surface and a second surface opposing the first surface;

a third light emitting part disposed on a first surface of the second light emitting part, and including a third n-type semiconductor layer, a third active layer, and a third p-type semiconductor layer;

a first contact member electrically connected to the first surface of the second n-type semiconductor layer; and

a second contact member electrically connected to the third n-type semiconductor layer,

wherein:

the first contact member extends to the first light emitting part to electrically contact the first n-type semiconductor layer; and

the second contact member has a varying width.

17. The light emitting device of claim 16 , wherein:

the first contact member includes a first contact structure and a second contact structure extending in opposite directions;

the second contact member includes a third contact structure; and

the first surface of the first light emitting part faces the downward direction.

18. The light emitting device of claim 16 , wherein the first contact member has a greater thickness than the second contact member.

19. The light emitting device of claim 16 , wherein a total surface area of the first light emitting part is greater than those of the second and third light emitting parts, and a total surface area of the second light emitting part is greater than that of the third light emitting part.

20. The light emitting device of claim 16 , wherein the first, second, and third light emitting parts are configured to emit light having different peak wavelengths from each other.

Continuity (3)
Continuation 16561256 · Sep 5, 2019
Provisional Application 62731206 · Sep 14, 2018
Related Publication 20220406983A1 · Dec 22, 2022