Method for preparing semiconductor device with gate spacer
The present application provides a method for preparing a semiconductor device with an air gate spacer for reducing parasitic capacitance. The method includes forming a stacking structure on a semiconductor substrate; forming a first sidewall spacer, a second sidewall spacer and a sacrificial sidewall spacer on a sidewall of the stacking structure; and removing the sacrificial sidewall spacer to form an air gap between the first and second sidewall spacers. The sacrificial sidewall spacer is located between the first and second sidewall spacers, and the first and second sidewall spacers have an etching selectivity with respect to the sacrificial sidewall spacer.
1. A method for preparing a semiconductor device, comprising:
forming a stacking structure on a semiconductor substrate;
forming a first sidewall spacer, a second sidewall spacer and a sacrificial sidewall spacer on a sidewall of the stacking structure, wherein the sacrificial sidewall spacer is located between the first and second sidewall spacers, and the first and second sidewall spacers have an etching selectivity with respect to the sacrificial sidewall spacer; and
removing the sacrificial sidewall spacer to form an air gap between the first and second sidewall spacers;
forming a first dielectric layer to cover the semiconductor substrate, the first and second sidewall spacers, the sacrificial sidewall spacer and the stacking structure before removal of the sacrificial sidewall spacer and after formation of the first and second sidewall spacers as well as the sacrificial sidewall spacer; and
thinning the first dielectric layer by removing a top portion of the first dielectric layer, so as to expose a top end of the sacrificial sidewall spacer before removal of the sacrificial sidewall spacer and after formation of the first dielectric layer; and
forming a second dielectric layer on the thinned first dielectric layer after removal of the sacrificial sidewall spacer, wherein the second dielectric layer seals a top end of the air gap.
2. The method for preparing a semiconductor device according to claim 1 , wherein the first and second sidewall spacers are respectively formed of a carbon-containing material, and the sacrificial sidewall spacer is formed of an oxide material.
3. The method for preparing a semiconductor device according to claim 1 , wherein the sacrificial sidewall spacer is removed by performing an isotropic etching process.