Metal heterojunction structure with capping metal layer
The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
1. A method, comprising:
forming a first metal structure within a first dielectric layer, an upper surface of the first metal structure being lower than an upper surface of the first dielectric layer that is adjacent to the upper surface of the first metal structure;
forming a second metal structure over the upper surface of the first metal structure; and
straining an upper portion of the first dielectric layer to have a tensile stress.
2. The method of claim 1 , wherein the straining including implanting ions of one or more of germanium, silicon, carbon, nitrogen, phosphorus or boron into the upper portion of the first dielectric layer.
3. The method of claim 1 , further comprising forming a third metal structure directly over the second metal structure, the third metal structure being surrounded by a second dielectric layer.
4. The method of claim 1 , wherein the forming the first metal structure within the first dielectric layer includes forming a recess portion between the first dielectric layer and the first metal structure by removing an upper portion of the first metal structure.
5. The method of claim 1 , wherein the straining an upper portion of the first dielectric layer increases a volume of the upper portion of the first dielectric layer.
6. A method, comprising:
receiving a wafer including a first metal structure and a second metal structure in a first dielectric layer, an upper surface of the first metal structure being lower than an upper surface of the first dielectric layer, the second metal structure over the upper surface of the first metal structure; and
straining an upper portion of the first dielectric layer by doping.
7. The method of claim 6 , wherein the doping includes doping the upper portion of the first dielectric layer with dopants of one or more of germanium, silicon, carbon, nitrogen, phosphorus or boron.
8. The method of claim 6 , wherein the first metal structure and the second metal structure include a same conductive material.
9. The method of claim 6 , wherein the first metal structure includes a different conductive material from the second metal structure.
10. The method of claim 9 , wherein a conductive material of the first metal structure is different from a conductive material of the second metal structure in reacting to at least one of an acidic solution or an alkaline solution.
11. The method of claim 9 , wherein one of the first metal structure or the second metal structure is tungsten and another one of the first metal structure or the second metal structure is one or more of cobalt or copper.
12. The method of claim 6 , wherein the second metal structure extends laterally beyond the first metal structure at least in one lateral direction.
13. The method of claim 6 , wherein the first metal structure includes a different diameter from that of the second metal structure.
14. The method of claim 6 , wherein the first metal structure misaligns with the second metal structure.
15. The method of claim 6 , comprising forming a third metal structure directly over the second interconnect structure and a fourth metal structure directly over the third metal structure.
16. A method, comprising:
receiving a wafer including a first metal structure and a second metal structure in a first dielectric layer, an upper surface of the first metal structure being lower than an upper surface of the first dielectric layer, the second metal structure over the upper surface of the first metal structure; and
doping an upper portion of the first dielectric layer, thereby the upper portion of the first dielectric layer having a doping configuration different from that of a lower portion of the first dielectric layer.
17. The method of claim 16 , wherein the doping the upper portion of the first dielectric layer includes doping the upper portion of the first dielectric layer with ions of one or more of germanium, silicon, carbon, nitrogen, phosphorus or boron.
18. The method of claim 16 , further comprising:
forming a second dielectric layer over the first dielectric layer;
forming an aperture in the second dielectric layer exposing the second metal structure; and
forming a third metal structure in the aperture and directly over the second metal structure.
19. The method of claim 16 , wherein the second metal structure includes a different conductive material from the first metal structure.
20. The method of claim 19 , wherein a conductive material of the second metal structure is different from a conductive material of the first metal structure in reacting to at least one of an acidic solution or an alkaline solution.