Adapter board and method for forming same, packaging method, and package structure
Provided are an adapter board and a method for forming the same, a packaging method, and a package structure. One form of a method for forming an adapter board includes: providing a base, including an interconnect region and a capacitor region, the base including a front surface and a rear surface that are opposite each other; etching the front surface of the base, to form a first trench in the base of the interconnect region and form a second trench in the base of the capacitor region; forming a capacitor in the second trench; etching a partial thickness of the base under the first trench, to form a conductive via; forming a via interconnect structure in the conductive via; and thinning the rear surface of the base, to expose the via interconnect structure. In the embodiments and implementations of the present disclosure, the capacitor is further formed in the adapter board, so that a process of forming the capacitor and a process of forming the adapter board are integrated, and an additional step of forming the capacitor is omitted, which is beneficial to reduce processes and improve the process integration, and is further beneficial to reduce process costs and shorten the production cycle. Moreover, the functional diversity of the adapter board is further improved, so that an application scenario of the adapter board is diversified.
1. An adapter board, comprising:
a base comprising:
an interconnect region used for forming a via interconnect structure thereon,
a capacitor region used for forming a capacitor thereon, and
a front surface and a rear surface that are opposite to each other;
a first capacitor located in a partial thickness of the base of the capacitor region and a second capacitor located in a partial thickness of the base of the interconnect region, each of the first capacitor and the second capacitor comprising:
a first electrode in contact with the base,
a capacitor dielectric layer located on the first electrode, and
a second electrode located on the capacitor dielectric layer, where top surfaces of the first capacitor and the second capacitor are opposite to the rear surface of the base; and
a via interconnect structure, running through the base of the interconnect region, where the second capacitor is located on a side wall of the via interconnect structure.
2. The adapter board according to claim 1 , wherein:
the via interconnect structure comprises a first portion close to the rear surface of the base and a second portion that is close to the front surface of the base and that is connected to the first portion; and
the second capacitor is located on a side wall of the second portion in lieu of the first portion.
3. The adapter board according to claim 1 , further comprising: a first insulating layer, located between the first capacitor and the base.
4. The adapter board according to claim 1 , wherein the material of the first electrode and the second electrode comprises polysilicon doped with conductive ions.
5. The adapter board according to claim 1 , wherein the material of the base comprises silicon.
6. The adapter board according to claim 1 , wherein a width of the first capacitor in a direction parallel to the surface of the base is 0.2 μm to 3 μm.
7. The adapter board according to claim 1 , wherein a depth of the first capacitor in a direction perpendicular to the surface of the base accounts for 30% to 60% of the thickness of the base.
8. The adapter board according to claim 1 , further comprising: a second insulating layer, located between the second capacitor and the via interconnect structure and between the via interconnect structure and the base.