Semiconductor device including light-collimating layer and biometric device using the same

1. A semiconductor device, comprising:

a substrate having a plurality of pixels; and

a light-collimating layer disposed on the substrate, comprising:

a transparent material layer covering the pixels;

a first light-shielding layer disposed on the substrate;

a second light-shielding layer disposed on the first light-shielding layer;

a third light-shielding layer disposed on the second light-shielding layer; and

a plurality of transparent pillars disposed in the first light-shielding layer and the second light-shielding layer,

wherein the transparent material layer comprises:

a raised portion disposed between the substrate and the first light-shielding layer; and

a plurality of separating portions disposed between the first light-shielding layer and the second light-shielding layer and disposed between the second light-shielding layer and the third light-shielding layer,

wherein a thickness of the second light-shielding layer is different from a thickness of the third light-shielding layer.

2. The semiconductor device as claimed in claim 1 , wherein the raised portion is in direct contact with the pixels.

3. The semiconductor device as claimed in claim 1 , wherein the first light-shielding layer is disposed between the substrate and the second light-shielding layer.

4. The semiconductor device as claimed in claim 1 , wherein the raised portion fully or partially covers the pixels.

5. The semiconductor device as claimed in claim 1 , wherein the first light-shielding layer and the second light-shielding layer are formed of the same material.

6. The semiconductor device as claimed in claim 5 , wherein the material of the first light-shielding layer and the second light-shielding layer comprises a photoresist, an ink, a molding compound, a solder mask, an epoxy resin or a combination thereof.

7. The semiconductor device as claimed in claim 1 , wherein the first light-shielding layer, the second light-shielding layer, and the third light-shielding layer respectively have a plurality of holes, and the transparent pillars are at least disposed in the holes of the first light-shielding layer and the second light-shielding layer.

8. The semiconductor device as claimed in claim 7 , wherein a cross-sectional area of each hole of the first light-shielding layer is larger than a cross-sectional area of each hole of the second light-shielding layer, but smaller than a cross-sectional area of each hole of the third light-shielding layer.

9. The semiconductor device as claimed in claim 7 , wherein a cross-sectional area of each hole of the first light-shielding layer is equal to a cross-sectional area of each hole of the third light-shielding layer.

10. The semiconductor device as claimed in claim 1 , wherein a distance between the first light-shielding layer and the second light-shielding layer is different from a distance between the second light-shielding layer and the third light-shielding layer.

11. The semiconductor device as claimed in claim 1 , wherein a thickness of the raised portion is larger than a thickness of the separating portion.

12. The semiconductor device as claimed in claim 1 , wherein a top surface of each of the transparent pillars is round, oval, oblong, rectangular, hexagonal, irregular-shaped, or a combination thereof.

13. A biometric device, comprising:

the semiconductor device as claimed in claim 1 ;

a color filter layer disposed on the semiconductor device; and

a light source layer disposed on the color filter layer.

14. The biometric device as claimed in claim 13 , wherein the light source layer comprises a plurality of light sources, and the light sources are arranged in an array.

15. The biometric device as claimed in claim 13 , further comprising:

a cover plate disposed on a top of the light source layer.