Semiconductor image sensor
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.
1. A. back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor in the substrate;
a logic device disposed over the front side of the substrate;
a frame-like isolation structure surrounding the pixel sensor in the substrate;
a dielectric layer over the pixel sensor on the front side of the substrate;
a plurality of bar-like conductive structures disposed in the dielectric layer and arranged to align with the frame-like isolation structure; and
a conductor disposed in the dielectric layer and coupled to the plurality of bar-like conductive structures, Wherein a width of the conductor is less than a width of the frame-like isolation structure,
wherein each of the bar-like conductive structures is entirely overlapped by the frame-like isolation structure in a direction normal to the substrate, the frame-like isolation structure further comprises an insulating material portion and a conductive coating, and sidewalls of the insulating material portion are lined with the conductive coating, and
wherein the pixel sensor and the logic device are entirely surrounded by the frame-like isolation structure and the bar-like conductive structures from a plan view.
2. The BSI image sensor of claim 1 , wherein the pixel sensor is disposed to receive light with a wavelength.
3. The BSI image sensor of claim 2 , wherein the bar-like conductive structures are spaced apart from each other by the dielectric layer, and a spacing distance between the conductive structures is less than a half of the wavelength.
4. The BSI image sensor of claim 3 , wherein the spacing distance is less than 0.5 micrometers (μm).
5. The BSI image sensor of claim 1 , further comprises a sheet-like conductive structure disposed in the dielectric layer and overlapping at least a portion of the pixel sensor.
6. The BSI image sensor of claim 5 : wherein the sheet-like conductive structure is separated from the bar-like conductive structures by the dielectric layer.
7. The BSI image sensor of claim 1 , wherein a width of the bar-like conductive structures is less than the width of the isolation structure.
8. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor in the substrate;
a frame-like isolation structure surrounding the pixel sensor in the substrate;
a dielectric layer over the pixel sensor on the front side of the substrate;
a plurality of bar-like conductive structures disposed in the dielectric layer and arranged to align with the frame-like isolation structure; and
a conductor disposed in the dielectric layer and coupled to the plurality of bar-like conductive structures, wherein a top surface of the conductor is in contact with the one of the bar-like structures, and a width of the top surface of the conductor is less than a width of the frame-like isolation structure,
wherein the bar-like conductive structures are spaced apart from each other by the dielectric layer, each of the bar-like conductive structures is entirely overlapped by the frame-like isolation structure in a direction normal to the substrate, the frame-like isolation structure further comprises an insulating material portion and a conductive coating, and sidewalls of the insulating material portion are lined with the conductive coating.
9. The BSI image sensor of claim 8 , wherein the pixel sensor is disposed to receive light with a wavelength.
10. The BSI image sensor of claim 9 , wherein a spacing distance between the bar-like conductive structures is less than a half of the wavelength.
11. The BSI image sensor of claim 10 , wherein the spacing distance is less than 0.5 micrometers (μm).
12. The BSI image sensor of claim 8 , wherein a width of the bar-like conductive structures is less than the width of the isolation structure.
13. The BSI image sensor of claim 8 , further comprising a logic device disposed over the front side of the substrate.
14. The BSI image sensor of claim 13 , wherein at least one of the bar-like conductive structures is separated from the logic device.
15. The BSI image sensor of claim 8 , wherein the bar-like conductive structure is in contact with the isolation structure.
16. The BSI image sensor of claim 8 , further a back-end-of-line (BEOL) metallization stack disposed in the dielectric layer, wherein the bar-like conductive structure and the conductor are electrically isolated from the BEOL metallization stack.