Semiconductor device and manufacturing method thereof
A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
1. A semiconductor device comprising a transistor, the transistor comprising:
a first insulator;
a second insulator over the first insulator;
an oxide semiconductor over an in contact with at least a part of a top surface of the second insulator;
a third insulator over and in contact with at least a part of a top surface of the oxide semiconductor;
a first conductor and a second conductor electrically connected to the oxide semiconductor;
a fourth insulator over the third insulator;
a third conductor over the fourth insulator, at least a part of the third conductor located between the first conductor and the second conductor;
a fifth insulator over the third conductor,
wherein the first insulator includes a first silicon oxide film, a hafnium oxide film of the first silicon oxide film, and a second silicon oxide film containing a halogen element over the hafnium oxide film,
wherein a side surface of the second insulator and a side surface of the oxide semiconductor overlap each other, and
wherein the fifth insulator is in contact with the side surface of the second insulator, the side surface of the oxide semiconductor, and a top surface of the first insulator.
2. The semiconductor device according to claim 1 , wherein a length of the third insulator and a length of the fourth insulator are longer than a length of the third conductor in a channel length direction of the transistor.
3. The semiconductor device according to claim 1 , wherein the fifth insulator is in contact with a top surface and a side surface of the fourth insulator.
4. A semiconductor device comprising a transistor, the transistor comprising:
a first insulator;
a second insulator over the first insulator;
an oxide semiconductor over an in contact with at least a part of a top surface of the second insulator;
a third insulator over and in contact with at least a part of a top surface of the oxide semiconductor;
a first conductor and a second conductor electrically connected to the oxide semiconductor;
a fourth insulator over the third insulator;
a third conductor over the fourth insulator, at least a part of the third conductor located between the first conductor and the second conductor;
a fifth insulator over the third conductor,
wherein the first insulator includes a first silicon oxide film, a hafnium oxide film of the first silicon oxide film, and a second silicon oxide film containing fluorine over the hafnium oxide film,
wherein a side surface of the second insulator and a side surface of the oxide semiconductor overlap each other, and
wherein the fifth insulator is in contact with the side surface of the second insulator, the side surface of the oxide semiconductor, and a top surface of the first insulator.
5. The semiconductor device according to claim 4 , wherein a length of the third insulator and a length of the fourth insulator are longer than a length of the third conductor in a channel length direction of the transistor.
6. The semiconductor device according to claim 4 , wherein the fifth insulator is in contact with a top surface and a side surface of the fourth insulator.