Metal oxide film and semiconductor device
A material having favorable ferroelectricity is provided. An embodiment of the present invention is a metal oxide film including a first layer and a second layer. The first layer contains first oxygen and hafnium, and the second layer contains second oxygen and zirconium. The hafnium and the zirconium are bonded to each other with the first oxygen positioned therebetween, and the second oxygen is bonded to the zirconium.
1 . A semiconductor device comprising:
a capacitor and a transistor electrically connected to the capacitor,
wherein the capacitor comprises a first conductor, a second conductor, and a metal oxide film between the first conductor and the second conductor,
wherein the metal oxide film has a layered crystal structure,
wherein the layered crystal structure has a structure in which a first layer and a second layer are alternately stacked,
wherein the first layer comprises first oxygen and hafnium,
wherein the second layer comprises second oxygen and zirconium,
wherein the first oxygen is bonded the hafnium,
wherein the first oxygen is bonded to the zirconium,
wherein the second oxygen is bonded to the zirconium,
wherein the metal oxide film has ferroelectricity, and
wherein the metal oxide film comprises hafnium oxide and zirconium oxide.
2 . The semiconductor device according to claim 1 , wherein the transistor comprises silicon in a channel formation region.
3 . The semiconductor device according to claim 1 , wherein the transistor comprises an oxide semiconductor in a channel formation region.
4 . The semiconductor device according to claim 1 , wherein a concentration of at least one of hydrogen and carbon in the metal oxide film is less than or equal to 5×10 20 atoms/cm 3 .
5 . The semiconductor device according to claim 1 , wherein a concentration of at least one of hydrogen and carbon in the metal oxide film is less than or equal to 1×10 20 atoms/cm 3 .
6 . The semiconductor device according to claim 1 , wherein the metal oxide film comprises chlorine.
7 . The semiconductor device according to claim 1 , wherein the transistor comprises indium oxide in a channel formation region.
8 . The semiconductor device according to claim 1 , wherein one of the first conductor and the second conductor comprises titanium nitride.
9 . A semiconductor device comprising:
a ferroelectric capacitor and a transistor electrically connected to the ferroelectric capacitor,
wherein the ferroelectric capacitor comprises a first conductor, a second conductor, and a metal oxide film between the first conductor and the second conductor,
wherein the metal oxide film has a layered crystal structure,
wherein the layered crystal structure has a structure in which a first layer and a second layer are alternately stacked,
wherein the first layer comprises first oxygen and hafnium,
wherein the second layer comprises second oxygen and zirconium,
wherein the first oxygen is bonded the hafnium,
wherein the first oxygen is bonded to the zirconium,
wherein the second oxygen is bonded to the zirconium,
wherein the metal oxide film comprises hafnium oxide and zirconium oxide, and
wherein the layered crystal structure comprises an orthorhombic crystal structure.
10 . The semiconductor device according to claim 9 , wherein the transistor comprises silicon in a channel formation region.
11 . The semiconductor device according to claim 9 , wherein the transistor comprises an oxide semiconductor in a channel formation region.
12 . The semiconductor device according to claim 9 , wherein the transistor comprises indium oxide in a channel formation region.
13 . The semiconductor device according to claim 9 , wherein a concentration of at least one of hydrogen and carbon in the metal oxide film is less than or equal to 5×10 20 atoms/cm 3 .
14 . The semiconductor device according to claim 9 , wherein a concentration of at least one of hydrogen and carbon in the metal oxide film is less than or equal to 1×10 20 atoms/cm 3 .
15 . The semiconductor device according to claim 9 , wherein the metal oxide film comprises chlorine.
16 . The semiconductor device according to claim 9 , wherein one of the first conductor and the second conductor comprises titanium nitride.