Semiconductor package including semiconductor chips and dummy pad

1. A semiconductor package comprising:

a package substrate;

a first semiconductor chip, a second semiconductor chip and a third semiconductor chip on the package substrate; and

a dummy pad laterally disposed between the first semiconductor chip, the second semiconductor chip and the third semiconductor chip to overlap at least a portion of the first semiconductor chip, the second semiconductor chip and the third semiconductor chip,

wherein the dummy pad is disposed on the package substrate and in a space between the package substrate and the first semiconductor chip, the second semiconductor chip and the third semiconductor chip.

2. The semiconductor package of claim 1 , further comprising:

a molding member that fills the space between the package substrate and the first semiconductor chip, the second semiconductor chip and the third semiconductor chip to cover a top surface of the dummy pad.

3. The semiconductor package of claim 2 , wherein the molding member extends in a T-shape from the top surface of the dummy pad.

4. The semiconductor package of claim 1 , further comprising:

an under-fill that fills the space between the package substrate and the first semiconductor chip, the second semiconductor chip and the third semiconductor chip, covers a portion of a top surface of the dummy pad, and covers side surfaces of the dummy pad; and

a molding member that covers another portion of the top surface of the dummy pad.

5. The semiconductor package of claim 1 , wherein the second semiconductor chip and the third semiconductor chip are arranged in parallel along one side of the first semiconductor chip,

a lateral width of the dummy pad is greater than a separating distance between the first semiconductor chip and either one of the second semiconductor chip and the third semiconductor chip, and

a longitudinal width of the dummy pad is greater than a separating distance between the second semiconductor chip and the third semiconductor chip.

6. The semiconductor package of claim 5 , wherein the dummy pad overlaps the one side of the first semiconductor chip, overlaps one edge of second semiconductor chip opposing the one side of the first semiconductor chip, and overlaps one edge of the third semiconductor chip opposing the one side of the first semiconductor chip.

7. The semiconductor package of claim 1 , further comprising:

an insulating film including at least one of silicon oxide and silicon nitride disposed between the package substrate and the dummy pad.

8. The semiconductor package of claim 1 , wherein the package substrate comprises an interposer configured to provide electrical connection to at least one of the first semiconductor chip, the second semiconductor chip and the third semiconductor chip.

9. The semiconductor package of claim 1 , wherein the dummy pad comprises a conductive metal material, and the dummy pad is electrically isolated from the package substrate, the first semiconductor chip, the second semiconductor chip and the third semiconductor chip.

10. The semiconductor package of claim 9 , wherein the dummy pad has at least one of a flat panel shape in the form of a single rectangle, a stripe shape in the form of multiple parallel rectangles and a matrix shape in the form of an array of rectangles.

11. A semiconductor package comprising:

a redistribution structure;

at least three semiconductor chips on the redistribution structure;

a dummy pad between the redistribution structure and the at least three semiconductor chips; and

a molding member filling a space between the at least three semiconductor chips, such that the dummy pad overlaps at least a portion of each one of the at least three semiconductor chips, and the molding member covering at least a portion of a top surface of the dummy pad.

12. The semiconductor package of claim 11 , wherein a width of the dummy pad is greater than a separating distance between any two of the at least three semiconductor chips.

13. The semiconductor package 11 , wherein a bottom surface of each of the at least three semiconductor chips contacts the molding member, and

a bottom surface of the dummy pad contacts an insulating film formed on the redistribution structure and including at least one of silicon oxide and silicon nitride.

14. The semiconductor package of claim 11 , wherein the dummy pad is electrically isolated.

15. The semiconductor package of claim 11 , one of the at least three semiconductor chips has a stacked structure including a plurality of slices, and

another one of the least three semiconductor chips has a single layer structure.

16. A semiconductor package comprising:

an interposer;

semiconductor chips disposed adjacent to each other on the interposer, the semiconductor chips including a memory chip, a logic chip and a dummy chip;

a dummy pad disposed on the interposer and between the interposer and the semiconductor chips, wherein the dummy pad includes a metal material;

a molding member covering a bottom surface and side surfaces of the semiconductor chips, wherein the molding member covers a top surface and side surfaces of the dummy pad; and

a solder bump adhered to a bottom surface of the interposer,

wherein the dummy pad overlaps at least a portion of each one of the semiconductor chips.

17. The semiconductor package of claim 16 , wherein the dummy pad overlaps a side of the logic chip, and overlaps an edge of each one of the memory chip and the dummy chip.

18. The semiconductor package of claim 17 , wherein a first planar area where the dummy pad overlaps the logic chip is greater than each of a second planar area where the dummy pad overlaps the memory chip and a third planar area where the dummy pad overlaps the dummy chip.

19. The semiconductor package of claim 16 , wherein the memory chip is a high-bandwidth memory chip and is a stacked structure including a plurality of slices.

20. The semiconductor package of claim 16 , wherein a width of the dummy pad is greater than a maximum distance separating the semiconductor chips.