Image sensing device for cancelling a horizontal banding noise

1. An image sensing device, comprising:

a pixel array including a plurality of unit pixels coupled to a plurality of row lines, wherein at least one of the unit pixels includes a photo-diode for generating photo charges corresponding to an incident light and a transfer transistor for transferring the photo charges to a floating diffusion (FD) node in response to a transfer control signal transferred through a corresponding row line;

a row control circuit disposed at a first side of the pixel array and suitable for providing, to the respective row lines, the transfer control signal having a voltage level between a first voltage and a second voltage; and

a bias compensation circuit disposed at a second side of the pixel array and suitable for driving the transfer control signal to the second voltage during a reset read-out section of each of the row lines, wherein the bias compensation circuit includes a plurality of compensators coupled to the respective row lines, and wherein at least one of the compensators includes first and second compensation transistors coupled in series between a corresponding row line and a second voltage terminal.

2. The image sensing device of claim 1 ,

wherein each of the unit pixels further includes a reset transistor suitable for initializing the FD node according to a reset signal provided from the row control circuit,

wherein the reset read-out section is included in a section from disablement of the reset signal to enablement of the transfer control signal.

3. The image sensing device of claim 1 , wherein the first voltage has a source voltage level and the second voltage has a lower voltage level than a ground voltage level.

4. The image sensing device of claim 1 , wherein the first voltage has a higher voltage level than a source voltage level and the second voltage has a lower voltage level than a ground voltage level.

5. The image sensing device of claim 1 ,

wherein

the first and second compensation transistors have gates respectively receiving a source voltage signal and a compensation enable signal that is enabled during the reset read-out section.

6. The image sensing device of claim 1 , wherein each of the unit pixels further includes:

a driving transistor suitable for generating an electrical signal corresponding to charges stored in the FD node; and

a selection transistor suitable for outputting the electrical signal provided from the driving transistor as a pixel voltage according to a selection signal provided from the row control circuit.

7. The image sensing device of claim 6 ,

wherein the at least one of the compensators further includes:

a compensation signal generator suitable for generating a section determination signal based on the selection signal and a compensation enable signal that is enabled during the reset read-out section, and

wherein the first and second compensation transistors have gates respectively receiving a source voltage and the section determination signal.

8. An image sensing device, comprising:

a pixel array including a plurality of unit pixels coupled to a plurality of row lines, wherein each unit pixel includes a photo-diode for generating photo charges corresponding to an incident light and a transfer transistor for transferring the photo charges to a floating diffusion (FD) node in response to a transfer control signal transferred through a corresponding row line;

a first row control circuit disposed at a first side of the pixel array and suitable for providing, to odd row lines among the row lines, the transfer control signal having a voltage level between a first voltage and a second voltage;

a second row control circuit disposed at a second side of the pixel array and suitable for providing, to even row lines among the row lines, the transfer control signal;

a first bias compensation circuit disposed at the second side and suitable for driving the transfer control signal to the second voltage during a reset read-out section of the odd row lines; and

a second bias compensation circuit disposed at the first side and suitable for driving the transfer control signal to the second voltage during a reset read-out section of the even row lines.

9. The image sensing device of claim 8 ,

wherein each of the unit pixels further includes a reset transistor suitable for initializing the FD node according to a reset signal provided from the first row control circuit or the second row control circuit,

wherein the reset read-out section is included in a section from disablement of the reset signal to enablement of the transfer control signal.

10. The image sensing device of claim 8 , wherein the first voltage has a source voltage level or a higher voltage level than the source voltage level and the second voltage has a lower voltage level than a ground voltage level.

11. The image sensing device of claim 8 ,

wherein each of the first and second bias compensation circuit includes a plurality of compensators coupled to the respective row lines, and

wherein each of the compensators includes first and second compensation transistors coupled in series between a corresponding row line and a second voltage terminal and having gates respectively receiving a source voltage and a compensation enable signal that is enabled during the reset read-out section.

12. The image sensing device of claim 8 ,

wherein each of the unit pixels further includes:

a driving transistor suitable for generating an electrical signal corresponding to charges stored in the FD node; and

a selection transistor suitable for outputting the electrical signal provided from the driving transistor as a pixel voltage according to a selection signal provided from the first row control circuit or the second row control circuit, and

wherein each of the first and second bias compensation circuit includes a plurality of compensators coupled to the respective row lines,

wherein each of the compensators includes:

a compensation signal generator suitable for generating a section determination signal based on the selection signal and a compensation enable signal that is enabled during the reset read-out section; and

third and fourth compensation transistors coupled in series between a corresponding row line and a second voltage terminal and having gates respectively receiving a source voltage and the section determination signal.

13. An image sensing device, comprising:

a pixel array including a plurality of unit pixels coupled to a plurality of row lines, wherein each unit pixel includes a photo-diode for generating photo charges corresponding to an incident light, a transfer transistor for transferring the photo charges to a floating diffusion (FD) node in response to a transfer control signal, and a gain transistor for coupling the FD node to a dynamic range capacitor in response to a gain control signal;

a row control circuit disposed at a first side of the pixel array and suitable for providing, to the respective row lines, the gain control signal having a voltage level between a third voltage and a fourth voltage; and

a bias compensation circuit disposed at a second side of the pixel array and suitable for driving the gain control signal to the third voltage during a reset read-out section of each of the row lines.

14. The image sensing device of claim 13 ,

wherein each of the unit pixels further includes a reset transistor suitable for initializing the FD node according to a reset signal provided from the row control circuit,

wherein the reset read-out section is included in a section from disablement of the reset signal to enablement of the transfer control signal.

15. The image sensing device of claim 13 , wherein the third voltage has a higher voltage level than a source voltage level, and the fourth voltage has a ground voltage level or a lower voltage level than the ground voltage level.

16. The image sensing device of claim 13 ,

wherein the bias compensation circuit includes a plurality of compensators coupled to the respective row lines, and

wherein each of the compensators includes first and second compensation transistors coupled in series between a corresponding row line and a third voltage terminal and having gates respectively receiving a ground voltage and a compensation enable signal that is enabled during the reset read-out section.

17. The image sensing device of claim 13 ,

wherein each of the unit pixels further includes:

a driving transistor suitable for generating an electrical signal corresponding to charges stored in the FD node; and

a selection transistor suitable for outputting the electrical signal provided from the driving transistor as a pixel voltage according to a selection signal provided from the row control circuit,

wherein the bias compensation circuit includes a plurality of compensators coupled to the row lines, respectively, and

wherein each of the compensators includes:

a compensation signal generator suitable for generating a section determination signal based on the selection signal and a compensation enable signal that is enabled during the reset read-out section; and

third and fourth compensation transistors coupled in series between a corresponding row line and a third voltage terminal and having gates respectively receiving a ground voltage and the section determination signal.

18. The image sensing device of claim 13 ,

wherein the row control circuit further provides, to the respective row lines, the transfer control signal having a voltage level between a first voltage and a second voltage, and

wherein the bias compensation circuit further drives the transfer control signal to the second voltage during the reset read-out section.

19. The image sensing device of claim 18 , wherein the first voltage has a source voltage level or a higher voltage level than the source voltage level and the second voltage has a lower voltage level than a ground voltage level.

20. An image sensing device, comprising:

a pixel array including a plurality of unit pixels coupled to a plurality of row lines, wherein each unit pixel includes a photo-diode for generating photo charges corresponding to an incident light, a transfer transistor for transferring the photo charges to a floating diffusion (FD) node in response to a transfer control signal, and a gain transistor for coupling the FD node to a dynamic range capacitor in response to a gain control signal;

a first row control circuit disposed at a first side of the pixel array and suitable for providing, to odd row lines among the row lines, the gain control signal having a voltage level between a third voltage and a fourth voltage;

a second row control circuit disposed at a second side of the pixel array and suitable for providing, to even row lines among the row lines, the gain control signal;

a first bias compensation circuit disposed at the second side and suitable for driving the gain control signal to the third voltage during a reset read-out section of the odd row lines; and

a second bias compensation circuit disposed at the first side and suitable for driving the gain control signal to the third voltage during a reset read-out section of the even row lines.