Semiconductor device

1. A semiconductor device comprising:

a substrate;

a lower electrode structure disposed on the substrate;

a dielectric layer disposed on the lower electrode structure; and

an upper electrode structure disposed on the dielectric layer,

wherein:

the lower electrode structure comprises:

a first lower electrode pattern having a first recess;

a second lower electrode pattern disposed in the first recess of the first lower electrode pattern and having a second recess; and

a third lower electrode pattern fully filling the second recess of the second lower electrode pattern,

the first lower electrode pattern is cylinder-shaped,

the second lower electrode pattern is cylinder-shaped, and

the dielectric layer contacts the first lower electrode pattern, the second lower electrode pattern and the third lower electrode pattern.

2. The semiconductor device of claim 1 , wherein the dielectric layer contacts a top surface of the third lower electrode pattern.

3. The semiconductor device of claim 2 , wherein a top surface of the first lower electrode pattern is substantially co-planar with a top surface of the second lower electrode pattern.

4. The semiconductor device of claim 1 , wherein the third lower electrode pattern is cylinder-shaped with a filled interior.

5. The semiconductor device of claim 1 , wherein the second lower electrode pattern includes a metal nitride layer.

6. The semiconductor device of claim 1 , further comprising a first support disposed on a side surface of the first lower electrode pattern,

wherein:

the first support includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface,

the dielectric layer is disposed on the top surface and the bottom surface of the first support, and

the side surface of the first support is directly in contact with the side surface of the first lower electrode pattern.

7. The semiconductor device of claim 6 , further comprising a second support disposed under the first support and disposed on the side surface of the first lower electrode pattern,

wherein:

the second support includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface,

the dielectric layer is disposed on the top surface and the bottom surface of the second support, and

the side surface of the second support is directly in contact with the side surface of the first lower electrode pattern.

8. The semiconductor device of claim 6 , wherein a top surface of the first lower electrode pattern is disposed higher than the top surface of the first support.

9. The semiconductor device of claim 1 , wherein the second lower electrode pattern has a multilayer structure and includes a nitride-based material.

10. A semiconductor device comprising:

a substrate;

a lower electrode structure disposed on the substrate;

a dielectric layer disposed on the lower electrode structure; and

an upper electrode structure disposed on the dielectric layer,

wherein:

the lower electrode structure comprises:

a first lower electrode pattern, a top surface of the first lower electrode pattern having a first recess;

a second lower electrode pattern disposed in the first recess of the first lower electrode pattern, a top surface of the second lower electrode pattern having a second recess; and

a third lower electrode pattern disposed on the second lower electrode pattern, and including a first portion and a second portion disposed on the first portion,

the first lower electrode pattern is cylinder-shaped,

the second lower electrode pattern is cylinder-shaped,

the first portion of the third lower electrode pattern fully fills the second recess of the second lower electrode pattern,

a bottom surface of the second portion of the third lower electrode pattern contacts at least one of the top surface of the first lower electrode pattern and the top surface of the second lower electrode pattern, and

the dielectric layer contacts a side surface of the first lower electrode pattern, and a top surface and a side surface of the second portion of the third lower electrode pattern.

11. The semiconductor device of claim 10 , wherein the bottom surface of the second portion of the third lower electrode pattern is substantially coplanar with the at least one of the top surface of the first lower electrode pattern and the top surface of the second lower electrode pattern.

12. The semiconductor device of claim 11 , wherein the top surface of the first lower electrode pattern is substantially coplanar with the top surface of the second lower electrode pattern.

13. The semiconductor device of claim 12 , wherein the side surface of the second portion of the third lower electrode pattern is vertically coplanar with the side surface of the first lower electrode pattern.

14. The semiconductor device of claim 10 , wherein a width of the second portion of the third lower electrode pattern is greater than a width of the first portion of the third lower electrode pattern.

15. The semiconductor device of claim 10 , wherein the first lower electrode pattern contacts the second lower electrode pattern and the third lower electrode pattern, and the second lower electrode pattern contacts the third lower electrode pattern.

16. A semiconductor device comprising:

a substrate;

a first insulation layer disposed on the substrate;

a contact plug penetrating the first insulation layer and electrically connected to the substrate;

a second insulation layer disposed on the first insulation layer and having a through-hole exposing a top surface of the contact plug;

a lower electrode structure disposed on the contact plug;

a dielectric layer disposed on the lower electrode structure; and

an upper electrode structure disposed on the dielectric layer,

wherein:

the lower electrode structure comprises:

a first lower electrode pattern disposed in the through-hole of the second insulation layer and contacting the top surface of the contact plug, the first lower electrode pattern being cylinder-shape and having a first recess;

a second lower electrode pattern disposed in the first recess of the first lower electrode pattern, the second lower electrode pattern being cylinder-shape and having a second recess; and

a third lower electrode pattern disposed on the second lower electrode pattern, and including a first portion and a second portion disposed on the first portion, the first portion of the third lower electrode pattern fully fills the second recess of the second lower electrode pattern,

a bottom surface of the second portion of the third lower electrode pattern contacts at least one of a top surface of the first lower electrode pattern and a top surface of the second lower electrode pattern,

the dielectric layer contacts the first lower electrode pattern and the third lower electrode pattern,

a width of the second portion of the third lower electrode pattern in a direction that is parallel to a top surface of the substrate is greater than a width of the first portion of the third lower electrode pattern in the direction, and

the bottom surface of the second portion of the third lower electrode pattern is substantially coplanar with at least one of the top surface of the first lower electrode pattern and the top surface of the second lower electrode pattern.

17. The semiconductor device of claim 16 , wherein a side surface of the second portion of the third lower electrode pattern is vertically coplanar with a side surface of the first lower electrode pattern.

18. The semiconductor device of claim 16 , wherein the dielectric layer contacts a side surface of the first lower electrode pattern, and a top surface and a side surface of the second portion of the third lower electrode pattern.

19. The semiconductor device of claim 16 , wherein the first lower electrode pattern contacts the second lower electrode pattern and the third lower electrode pattern, and the second lower electrode pattern contacts the third lower electrode pattern.