Multiplexer with floating raised frame bulk acoustic wave device

1. A multiplexer comprising:

a first acoustic wave filter coupled to a common node, the first acoustic wave filter having a first passband; and

a second acoustic wave filter coupled to the common node, the second acoustic wave filter having a second passband, the second acoustic wave filter including a bulk acoustic wave resonator, the bulk acoustic wave resonator including a floating raised frame structure at a floating potential, the floating raised frame structure configured to cause a reflection coefficient of the second acoustic wave filter to be increased in the first passband.

2. The multiplexer of claim 1 wherein the multiplexer is configured to support carrier aggregation of at least a first carrier in the first passband and a second carrier within the second passband.

3. The multiplexer of claim 1 wherein the multiplexer is configured to support carrier aggregation of at least a first carrier in the first passband, a second carrier within the second passband, and a third carrier in a third passband in a third acoustic wave filter.

4. The multiplexer of claim 1 wherein the second acoustic wave filter includes a second bulk acoustic wave resonator, the second bulk acoustic wave resonator including a second floating raised frame structure.

5. The multiplexer of claim 1 wherein the bulk acoustic wave resonator includes a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode, the floating raised frame structure being positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode.

6. The multiplexer of claim 5 wherein the bulk acoustic wave resonator includes an overlap region that includes thicker metal of the first electrode that a central part of an active region, and the first electrode extends away from the piezoelectric layer in the overlap region.

7. The multiplexer of claim 6 wherein the floating raised frame structure is spaced apart from the first electrode by an air gap, and the air gap extends into at least part of the overlap region.

8. The multiplexer of claim 6 wherein the floating raised frame structure is spaced apart from the first electrode by an electrically insulating material, and the electrically insulating material extends into at least part of the overlap region.

9. The multiplexer of claim 1 wherein the bulk acoustic wave resonator includes an active region corresponding to a region in which two electrodes contact a piezoelectric layer and overlap an acoustic reflector, the floating raised frame structure spaced apart from the active region.

10. The multiplexer of claim 1 wherein the floating raised frame structure is disposed along a perimeter of the bulk acoustic wave resonator.

11. A packaged radio frequency module comprising:

a packaging substrate;

a multiplexer on the packaging substrate, the multiplexer including a first acoustic wave filter coupled to a common node and a second acoustic wave filter coupled to the common node, the second acoustic wave filter including a bulk acoustic wave resonator that includes a floating raised frame structure at a floating potential, the floating raised frame structure configured to cause a reflection coefficient of the second acoustic wave filter to be increased in a passband of the first acoustic wave filter; and

a radio frequency component on the packaging substrate, the radio frequency component electrically coupled to the second acoustic wave filter, the multiplexer and the radio frequency component being enclosed within a common package.

12. The packaged radio frequency module of claim 11 wherein the radio frequency component includes a power amplifier.

13. The packaged radio frequency module of claim 11 wherein the radio frequency component includes a radio frequency switch.

14. The packaged radio frequency module of claim 11 wherein the multiplexer is configured to support carrier aggregation of at least a first carrier in the passband of the first acoustic wave filter a second carrier within a passband of the second acoustic wave filter.

15. The packaged radio frequency module of claim 11 further comprising a third acoustic wave filter coupled to the common node.

16. The packaged radio frequency module of claim 11 wherein the second acoustic wave filter includes a second bulk acoustic wave resonator, the second bulk acoustic wave resonator including a second floating raised frame structure.

17. The packaged radio frequency module of claim 11 wherein the bulk acoustic wave resonator includes a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode, the floating raised frame structure being positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode.

18. The packaged radio frequency module of claim 11 wherein the bulk acoustic wave resonator includes an active region corresponding to a region in which two electrodes contact a piezoelectric layer and overlap an acoustic reflector, the floating raised frame structure spaced apart from the active region.

19. The packaged radio frequency module of claim 11 wherein the floating raised frame structure is disposed along a perimeter of the bulk acoustic wave resonator.

20. The packaged radio frequency module of claim 11 wherein the floating raised frame structure has an annular shape in plan view.