Semiconductor device, semiconductor wafer, memory device, and electronic device
An object is to provide a semiconductor device with large memory capacity. The semiconductor device includes first to seventh insulators, a first conductor, and a first semiconductor. The first conductor is positioned on a first top surface of the first insulator and a first bottom surface of the second insulator. The third insulator is positioned in a region including a side surface and a second top surface of the first insulator, a side surface of the first conductor, and a second bottom surface and a side surface of the second insulator. The fourth insulator, the fifth insulator, and the first semiconductor are sequentially stacked on the third insulator. The sixth insulator is in contact with the fifth insulator in a region overlapping the first conductor. The seventh insulator is positioned in a region including the first semiconductor and the sixth insulator.
1. A semiconductor device comprising:
a first insulator;
a first conductor over the first insulator;
a second insulator over the first conductor;
a third insulator enclosed by the first conductor in a first region;
a first semiconductor enclosed by the third insulator in the first region and a second region;
a fourth insulator in contact with the first semiconductor in the first region; and
a fifth insulator enclosed by the first semiconductor in the first region and the second region,
wherein the second region is over the first region,
wherein the first conductor, the third insulator, the first semiconductor, the fourth insulator and the fifth insulator overlap each other in the first region,
wherein the second insulator, the third insulator, the first semiconductor and the fifth insulator overlap each other in the second region,
wherein the fifth insulator is in contact with the first semiconductor in the second region,
wherein the first semiconductor comprises:
a first portion in the first region; and
a second portion in the second region, and
wherein the second portion has higher conductivity than the first portion.
2. The semiconductor device according to claim 1 , further comprising:
a sixth insulator between the third insulator and the first semiconductor,
wherein the sixth insulator is in contact with the first semiconductor in the first region and the second region.
3. The semiconductor device according to claim 2 , further comprising:
a seventh insulator between the sixth insulator and the third insulator,
wherein the seventh insulator is in contact with the third insulator in the first region.
4. The semiconductor device according to claim 3 , wherein the seventh insulator is in contact with the third insulator and the sixth insulator in the second region.
5. The semiconductor device according to claim 3 , wherein the third insulator is in contact with the sixth insulator in the second region.
6. The semiconductor device according to claim 2 , further comprising:
a second conductor interposed between the third insulator and the sixth insulator in the first region.
7. The semiconductor device according to claim 1 , further comprising:
a second semiconductor between the first conductor and the third insulator in the first region.
8. The semiconductor device according to claim 1 , further comprising:
a sixth insulator enclosed by the fifth insulator.
9. The semiconductor device according to claim 1 , further comprising:
a second conductor enclosed by the fifth insulator.
10. The semiconductor device according to claim 1 ,
wherein the first semiconductor comprises a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, and
wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer are stacked between the third insulator and the fifth insulator.
11. The semiconductor device according to claim 1 , wherein the first portion comprises a channel formation region of a transistor.
12. The semiconductor device according to claim 1 ,
wherein the first portion comprises a metal oxide,
wherein the second portion comprises a conductive compound,
wherein the metal oxide comprises a first element, and
wherein the conductive compound comprises the first element and a second element.
13. The semiconductor device according to claim 12 , wherein the fifth insulator comprises the second element.
14. A memory device comprising:
the semiconductor device according to claim 1 ; and
a peripheral circuit.
15. A semiconductor device comprising:
a first insulator;
a first conductor over the first insulator;
a second insulator over the first conductor;
a second conductor over the second insulator;
a third insulator enclosed by the first conductor in a first region;
a first semiconductor enclosed by the third insulator in the first region, a second region and a third region;
a fourth insulator in contact with the first semiconductor in the first region;
a fifth insulator enclosed by the first semiconductor in the first region, the second region and the third region;
a second semiconductor enclosed by the fifth insulator in the first region, the second region and the third region; and
a sixth insulator enclosed by the second semiconductor in the first region, the second region and the third region,
wherein the second region is over the first region,
wherein the third region is over the second region,
wherein the first conductor, the third insulator, the first semiconductor, the fourth insulator, the fifth insulator, the second semiconductor and the sixth insulator overlap each other in the first region,
wherein the second insulator, the third insulator, the first semiconductor, the fifth insulator, the second semiconductor and the sixth insulator overlap each other in the second region,
wherein the second conductor, the third insulator, the first semiconductor, the fifth insulator, the second semiconductor and the sixth insulator overlap each other in the third region,
wherein the fifth insulator is in contact with the first semiconductor in the second region and the third region,
wherein the first semiconductor comprises:
a first portion in the first region;
a second portion in the second region; and
a third portion in the third region, and
wherein each of the second portion and the third portion has higher conductivity than the first portion.
16. The semiconductor device according to claim 15 , further comprising:
a third conductor enclosed by the sixth insulator.
17. The semiconductor device according to claim 15 , further comprising:
a third semiconductor interposed between the first conductor and the third insulator in the first region.
18. The semiconductor device according to claim 15 ,
wherein the first semiconductor comprises a channel formation region of a first transistor in the first region, and
wherein the second semiconductor comprises a channel formation region of a second transistor in the third region.
19. The semiconductor device according to claim 18 , wherein one of a source and a drain of the first transistor is electrically connected to a gate of the second transistor.
20. A memory device comprising:
the semiconductor device according to claim 15 ; and
a peripheral circuit.