Film deposition method and plasma processing apparatus

1. A film deposition method comprising. mounting an object to be processed on a stage, said object including a recess part;

maintaining an inside of a chamber to have a predetermined pressure and cooling the stage below −20° C.;

supplying only a low-vapor-pressure material selected from the group consisting of C 4 F 8 , C 4 F 6 , and isopropyl alcohol (IPA); and

generating plasma from the supplied gas including the low-vapor-pressure material, thereby causing a precursor generated only from the low-vapor-pressure material by the plasma to be deposited on the recess part of the object to be processed, wherein the predetermined pressure inside the chamber is between 50 mTorr (6.67 Pa) and the equilibrium vapor pressure of C 4 F 8 at the temperature of the supplied gas, and wherein the causing the precursor generated from the low-vapor-pressure material to be deposited is to deposit the precursor on the recess part, thereby filling the recess part with a flowable organic film, said flowable organic film being free of Si.

2. The film deposition method according to claim 1 , wherein the gas including the low-vapor-pressure material is a carbon-containing gas.

3. The film deposition method according to claim 1 , wherein an aspect ratio of the recess part is 2 or greater.

4. The film deposition method according to claim 1 ,

wherein as an aspect ratio of the recess part formed in the object to be processed becomes higher, a film deposition speed of depositing the precursor becomes higher.

5. The film deposition method according to claim 1 , the film deposition method further comprising:

completely filling an inside of the recessed part with the flowable organic film and then depositing over the recessed part with more of the flowable organic film.

6. The film deposition method according to claim 1 ,

wherein the film deposition speed in the recessed part formed in the object to be processed is faster than a film deposition speed in a fat part of the object to be processed.

7. The film deposition method according to claim 1 , the film deposition method further comprising:

applying high frequency power for a plasma generation to an inside of the chamber and high frequency power for a pull-in of a bias so that ion energy becomes 0 V or higher and 1000 V or lower.

8. The film deposition method according to claim 1 ,

wherein the gas including the low-vapor-pressure material includes an inert gas, and

wherein a ratio of a flow rate of the gas including the low-vapor-pressure material relative to a flow rate of the inert gas is 50% or less.

9. The film deposition method according to claim 1 ,

wherein the film deposition method is performed by any one of an inductively-coupled type plasma processing apparatus, a capacitive coupled plasma processing apparatus applying high frequency power for generating plasma on a side on an upper electrode, a microwave plasma processing apparatus, and a remote plasma apparatus.

10. The film deposition method according to claim 1 , wherein the recess part is formed and defined by etching the object to have a predetermined pattern.

11. A film deposition method comprising:

mounting an object on a stage, said object including a recess;

cooling the stage below −20° C.;

supplying, into the inside of a chamber, only a first gas consisting of:

an inert gas, and

a second gas selected from the group consisting of C 4 F 8 , C 4 F 6 and isopropyl alcohol (IPA);

adjusting a pressure within the chamber between 50 mTorr (6.67 Pa) and an equilibrium vapor pressure of C 4 F 8 at a given temperature of the gas;

depositing a flowable organic film in the recess and filling the recess with the flowable organic film by generating plasma only from the first gas.

12. The film deposition method of claim 11 , wherein the flowable organic film is a Si-free organic film.

13. A film deposition method comprising:

mounting an object on a stage, said object including a recess;

cooling the stage below −20° C.;

supplying, into the inside of a chamber, a gas including at least one selected from the group consisting of C 4 F 8 , C 4 F 6 , and isopropyl alcohol (IPA);

adjusting a pressure within the chamber between 50 mTorr (6.67 Pa) and an equilibrium vapor pressure of C 4 F 8 at a given temperature of the gas;

depositing a flowable organic film in the recess and filling the recess with the flowable organic film by generating plasma from the gas,. wherein the flowable organic film is a Si-free organic film.