Memory system and storage device
A memory system of an embodiment includes a nonvolatile memory, a primary cache memory, a secondary cache memory, and a processor. The processor performs address conversion by using logical-to-physical address conversion information relating to data to be addressed in the nonvolatile memory. Based on whether first processing is performed on the nonvolatile memory or second processing is performed on the nonvolatile memory, the processor controls to store whether the logical-to-physical address conversion information relating to the first processing to be in the primary cache memory as cache data or logical-to-physical address conversion information relating to the second processing to be in the secondary cache memory as cache data.
1. A memory system comprising:
a nonvolatile memory;
a first cache memory;
a second cache memory; and
a control circuit configured to perform address conversion by using logical-to-physical address conversion information relating to data to be addressed in the nonvolatile memory, wherein
based on whether first processing is performed on the nonvolatile memory or second processing different from the first processing is performed on the nonvolatile memory, the control circuit controls whether the logical-to-physical address conversion information relating to the first processing is to be stored in the first cache memory as first cache data or logical-to-physical address conversion information relating to the second processing is to be stored in the second cache memory as second cache data, and
narrow area access data are stored in the first cache memory and wide area access data are stored in the second cache memory.
2. The memory system according to claim 1 , wherein
in a case where the first cache memory becomes full of the first cache data, the control circuit moves the first cache data that are to be purged from the first cache memory to the second cache memory based on LRU, and stores the first cache data in the second cache memory.
3. The memory system according to claim 2 , wherein
in a case where the second cache memory becomes full of the second cache data, the control circuit erases the second cache data that are to be erased from the second cache memory based on the LRU.
4. The memory system according to claim 1 , wherein
in updating the second cache data stored in the second cache memory, the control circuit moves the second cache data to the first cache memory, stores the second cache data in the first cache memory, and updates the second cache data in the first cache memory.
5. The memory system according to claim 1 , wherein
the first cache data stored in the first cache memory and the second cache data stored in the second cache memory do not overlap with each other.
6. The memory system according to claim 1 , wherein
the second cache memory is provided in a memory which is included in a host apparatus which requests to write and to read the data into and from the nonvolatile memory, the request designating a logical address corresponding to a physical address of the nonvolatile memory.
7. The memory system according to claim 6 , wherein
a storage capacity of the second cache memory is set by the host apparatus.
8. The memory system according to claim 6 , wherein
the first processing is processing performed in response to the request from the host apparatus to read or write the data from or into the nonvolatile memory, and
the second processing is garbage collection performed on the nonvolatile memory.
9. The memory system according to claim 8 , wherein the second processing is performed without an access request from the host apparatus.
10. The memory system according to claim 1 , wherein
the memory system includes a memory controller including a processor that controls reading and writing of the data from and into the nonvolatile memory, and
the control circuit is the processor.
11. The memory system according to claim 1 , wherein
the memory system includes a memory controller including a processor that controls reading and writing of the data from and into the nonvolatile memory, and
the control circuit is a processor different from the processor.
12. The memory system according to claim 1 , wherein
the memory system includes a memory controller that controls reading and writing of the data from and into the nonvolatile memory, and
the first cache memory is included in the memory controller.
13. The memory system according to claim 1 , wherein
the first cache data is not included in the second cache data.
14. A storage device comprising:
a nonvolatile memory;
a memory controller configured to control the nonvolatile memory;
a host apparatus configured to transmit a request to access the nonvolatile memory to the memory controller;
a first cache memory;
a second cache memory; and
a control circuit configured to perform address conversion by using logical-to-physical address conversion information relating to data to be addressed in the nonvolatile memory, wherein
based on whether first processing is performed on the nonvolatile memory or second processing different from the first processing is performed on the nonvolatile memory, the control circuit controls whether the logical-to-physical address conversion information relating to the first processing is to be stored in the first cache memory as first cache data or logical-to-physical address conversion information relating to the second processing is to be stored in the second cache memory as second cache data, and
narrow area access data are stored in the first cache memory and wide area access data are stored in the second cache memory.
15. The storage device according to claim 14 , wherein the first cache data is not included in the second cache data.
16. The storage device according to claim 14 , wherein the second processing is performed without an access request from the host apparatus.