Memory system
A memory system includes a non-volatile memory and a controller including a memory having a lower access latency than the non-volatile memory. The controller is configured to track addresses of data stored in the non-volatile memory that were subject to prior wear leveling processes, in a buffer configured in the memory of the controller, perform a current wear leveling process on data stored in the non-volatile memory, and determine whether an address of the data subject to the current wear leveling process is stored in the buffer, and perform a pinning process to disable overwrite of data stored in the memory of the controller and corresponding to the address.
1 . A memory system comprising:
a non-volatile memory; and
a controller including a memory having a lower access latency than the non-volatile memory, the controller configured to:
temporarily store, in the memory, data to be written into the non-volatile memory and data read from the non-volatile memory;
track logical addresses of data stored in the non-volatile memory that were subject to a first limited number of recent wear leveling processes, in a ring buffer configured in the memory of the controller;
perform a current wear leveling process on first data stored in the non-volatile memory, and determine whether an logical address of the first data subject to the current wear leveling process is included in the tracked logical addresses and whether the first data is stored in the memory; and
upon determining that the logical address of the first data is included in the tracked logical addresses and that the first data is stored in the memory, perform a pinning process to disable overwrite of the first data stored in the memory.
2 . The memory system according to claim 1 , wherein
the memory includes a first memory for unpinned data and a second memory for pinned data, and
the controller is configured to store the first data subject to the current wear leveling process in the first memory until the pinning process, and transfer the data from the first memory to the second memory during the pinning process.
3 . The memory system according to claim 2 , wherein the controller is configured to enable overwrite of the unpinned data in the first memory.
4 . The memory system according to claim 1 , wherein the controller is configured to:
maintain an address list of logical addresses of data that are to be subjected to pinning processes; and
add the logical address of the first data subject to the current wear leveling process to the address list.
5 . The memory system according to claim 4 , wherein the controller is configured to:
upon determining that the first data subjected to the current wear leveling process is not stored in the memory, add the logical address of the first data subject to the current wear leveling process to the address list.
6 . The memory system according to claim 4 , wherein the controller is configured to add the logical address of the first data subject to the current wear leveling process to the address list in response to determining that a time period from a most recent one of the first limited number of recent wear leveling processes to the current wear leveling process is less than a threshold.
7 . The memory system according to claim 4 , wherein the controller is configured to:
perform another wear leveling process on second data stored in the non-volatile memory and the memory after the current wear leveling process, and determine that a logical address of the second data subject to the another wear leveling process is not included in the tracked logical addresses; and
perform an unpinning process to enable overwrite of the second data subject to the another wear leveling process.
8 . The memory system according to claim 1 , wherein the controller is configured to:
maintain an address list of logical addresses of data that are to be subjected to pinning processes.
9 . The memory system according to claim 8 , wherein the controller is configured to perform an unpinning process to enable overwrite of the first data in the memory subjected to the current pinning process based on an access frequency thereof.
10 . A method of controlling a memory system including a non-volatile memory and a memory having a lower access latency than the non-volatile memory, the method comprising:
temporarily storing, in the memory, data to be written into the non-volatile memory and data read from the non-volatile memory;
tracking logical addresses of data stored in the non-volatile memory that were subject to a first limited number of recent wear leveling processes, in a ring buffer configured in the memory;
performing a current wear leveling process on first data stored in the non-volatile memory, and determining whether an logical address of the first data subject to the current wear leveling process is included in the tracked logical addresses and whether the first data is stored in the memory; and
upon determining that the logical address of the first data is included in the tracked logical addresses and the first data is stored in the memory, performing a pinning process to disable overwrite of the first data stored in the memory.
11 . The method according to claim 10 , wherein
the memory includes a first memory for unpinned data and a second memory for pinned data, and
the method further comprises storing the first data subject to the current wear leveling process in the first memory until the pinning process, and transferring the data from the first memory to the second memory during the pinning process.
12 . The method according to claim 11 , further comprising:
enabling overwrite of the unpinned data in the first memory.
13 . The method according to claim 10 , further comprising:
maintaining an address list of logical addresses of data that are to be subjected to pinning processes; and
adding the logical address of the first data subject to the current wear leveling process to the address list.
14 . The method according to claim 13 , further comprising:
upon determining that the first data subjected to the current wear leveling process is not stored in the memory, adding the logical address of the first data subject to the current wear leveling process to the address list.
15 . The method according to claim 13 , further comprising:
adding the logical address of the first data subject to the current wear leveling process to the address list in response to determining that a time period from a most recent one of the first limited number of recent wear leveling processes to the current wear leveling process is less than a threshold.
16 . The method according to claim 13 , further comprising:
performing another wear leveling process on second data stored in the non-volatile memory and the memory after the current wear leveling process, and determining that a logical address of the second data subject to the another wear leveling process is not included in the tracked logical addresses; and
performing an unpinning process to enable overwrite of the second data subject to the another wear leveling process.
17 . The method according to claim 10 , further comprising:
maintaining an logical address list of addresses of data that are to be subjected to pinning process.
18 . The method according to claim 17 , further comprising:
performing an unpinning process to enable overwrite of the first data in the memory subjected to the current pinning process based on an access frequency thereof.