IP Library › Granted Patent US 11,715,652
Granted Patent B2
US 11,715,652 · App. 16/583,711 · Granted Aug 1, 2023

Member for semiconductor manufacturing apparatus

Inventors: Masaki Ishikawa (Handa, JP); Yuji Akatsuka (Handa, JP)
Assignee: NGK INSULATORS, LTD.
H01L21/67098C04B35/111C04B35/64H01J37/32697H01J37/32724H01L21/6833H01L21/6838H01L21/68785
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Quick Facts
Patent No.
US 11,715,652
App. No.
16/583,711
Granted
Aug 1, 2023
Kind
B2
Abstract

A member for a semiconductor manufacturing apparatus includes a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode, a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion, a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the ring-shaped joint portion, and a gas flow channel. The gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in the thickness direction of the ceramic plate and an internal gas flow channel that passes from the upper surface to the lower surface of the dense plug while winding through the dense plug. The gas flow channel passes inside of an inner periphery of the joint portion.

Claims (8)

1. A member for a semiconductor manufacturing apparatus comprising: a ceramic plate having an upper surface serving as a wafer mounting surface and incorporating an electrode; a ceramic dense plug disposed adjacent to a lower surface side of the ceramic plate and ceramic-bonded to the ceramic plate by a ring-shaped joint portion; a metal cooling plate joined to the lower surface of the ceramic plate in a portion other than the joint portion; and a gas flow channel, wherein the gas flow channel includes a gas discharge hole that passes completely through the ceramic plate in a thickness direction of the ceramic plate and an internal gas flow channel that passes from an upper surface to a lower surface of the dense plug while winding through the dense plug, and wherein the gas flow channel passes inside of an inner periphery of the joint portion.

2. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the joint portion is a ceramic sintered body.

3. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the upper surface of the dense plug is provided with a concave portion that communicates with the gas discharge hole and the internal gas flow channel and that has an opening larger than the internal gas flow channel.

4. The member for a semiconductor manufacturing apparatus according to claim 3 , wherein the gas discharge hole is formed from a plurality of small gas holes, and the concave portion communicates with the plurality of small gas holes.

5. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the internal gas flow channel is a channel that is spiral or zigzag in shape.

6. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the dense plug comprises a columnar plug body including the internal gas flow channel and a cylindrical skirt portion protruding from the plug body downward.

7. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the cooling plate includes a cylindrical hole having an opening on the upper surface thereof, and

wherein at least part of the dense plug is disposed inside the cylindrical hole.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 26, 2019
From: ISHIKAWA, MASAKI; AKATSUKA, YUJI
To: NGK INSULATORS, LTD.
Reel/Frame 050501/0212 →
Continuity (2)
Provisional Application 62738205 · Sep 28, 2018
Related Publication 20200227291A1 · Jul 16, 2020
Cited By (3)
US 12,341,048 US 12,506,025 US 12,733,429