IP Library › Granted Patent US 11,728,355
Granted Patent B2
US 11,728,355 · App. 17/403,911 · Granted Aug 15, 2023

Imaging device and electronic device

Inventors: Takayuki Ikeda (Kanagawa, JP); Yoshiyuki Kurokawa (Kanagawa, JP); Shintaro Harada (Kanagawa, JP); Hidetomo Kobayashi (Kanagawa, JP); Roh Yamamoto (Toyama, JP); Kiyotaka Kimura (Kanagawa, JP); Takashi Nakagawa (Kanagawa, JP); Yusuke Negoro (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/14605H01L27/1225H01L27/14612H01L27/14643H01L29/7869H04N25/40H04N25/766H04N25/77
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Quick Facts
Patent No.
US 11,728,355
App. No.
17/403,911
Granted
Aug 15, 2023
Kind
B2
Abstract

An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.

Claims (13)

1. An imaging device comprising:

a pixel block comprising a pixel and a second circuit; and

a first circuit,

wherein the pixel is configured to obtain a first signal by photoelectric conversion,

wherein the second circuit is configured to generate a second signal on the basis of a sum of the first signals, and

wherein the first circuit is configured to generate a third signal by binarizing the second signal.

2. The imaging device according to claim 1 ,

wherein the pixel comprises a photoelectric conversion element, a first transistor, a second transistor, and

wherein the first transistor comprises a metal oxide in a channel formation region.

3. The imaging device according to claim 2 ,

wherein the second transistor comprises silicon in a channel formation region.

4. The imaging device according to claim 2 ,

wherein the metal oxide comprises indium, gallium, and zinc.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 17, 2021
From: IKEDA, TAKAYUKI; KUROKAWA, YOSHIYUKI; HARADA, SHINTARO; KOBAYASHI, HIDETOMO; YAMAMOTO, ROH; KIMURA, KIYOTAKA; NAKAGAWA, TAKASHI; NEGORO, YUSUKE
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 057196/0471 →
Priority Claims (2)
JP 2017-104338 · May 26, 2017 · national
JP 2018-040915 · Mar 7, 2018 · national
Continuity (2)
Continuation 16615156
Related Publication 20210384239A1 · Dec 9, 2021
Cited By (1)
US 12,585,431