Solid-state imaging element and solid-state imaging apparatus
A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.
1. A solid-state imaging element comprising:
a first electrode;
a second electrode opposed to the first electrode; and
a photoelectric conversion layer provided between the first electrode and the second electrode, wherein
the photoelectric conversion layer includes an exciton generation layer including a dye material and a first semiconductor material, and an exciton disassociation layer including a second semiconductor material.
2. The solid-state imaging element according to claim 1 , wherein the photoelectric conversion layer includes a first inter-layer including the first semiconductor material between the exciton generation layer and the exciton disassociation layer.
3. The solid-state imaging element according to claim 2 , wherein the photoelectric conversion layer includes a second inter-layer including the first semiconductor material and the second semiconductor material between the first inter-layer and the exciton disassociation layer.
4. The solid-state imaging element according to any of claim 1 , wherein the first semiconductor material and the second semiconductor material are semiconductor materials having mutually different polarities.
5. The solid-state imaging element according to claim 1 , wherein a bandgap of the first semiconductor material is equal to a bandgap of the dye material or smaller than the bandgap of the dye material.
6. The solid-state imaging element according to claim 1 , wherein the first semiconductor material and the second semiconductor material have a difference in energy level.
7. The solid-state imaging element according to claim 1 , wherein the second semiconductor material forms an interface with the first semiconductor material and is not in direct contact with the dye material.
8. The solid-state imaging element according to claim 1 , wherein the dye material, the first semiconductor material, and the second semiconductor material are organic materials.
9. A solid-state imaging apparatus provided with a plurality of pixels each including one or a plurality of solid-state imaging elements, each of the solid-state imaging elements comprising:
a first electrode;
a second electrode opposed to the first electrode; and
a photoelectric conversion layer provided between the first electrode and the second electrode, wherein
the photoelectric conversion layer includes an exciton generation layer including a dye material and a first semiconductor material, and an exciton disassociation layer including a second semiconductor material.