Secure erase for data corruption
Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.
1. A memory device comprising:
a memory array of NAND memory cells; and
a memory controller configured to perform operations comprising:
rendering a value stored in a first page of the memory array unreadable by applying a pre-programming pulse to memory cells of the first page without applying an erase pulse until a later garbage collection operation, the pre-programming pulse changing a voltage level of each of the respective memory cells of the first page to a same level.
2. The memory device of claim 1 , wherein the operations further comprise:
prior the operations of rendering the value stored in the first page unreadable, receiving an indication from a host device that the first page is to be rendered unreadable.
3. The memory device of claim 2 , wherein the indication from the host device comprises receiving a command from the host device identifying the first page as containing sensitive data.
4. The memory device of claim 3 , wherein the command is a write command.
5. The memory device of claim 1 , wherein the operations further comprise:
subsequent to the rendering the value stored in the first page unreadable, garbage collecting the first page, the garbage collecting applying the erase pulse to the first page.
6. The memory device of claim 5 , wherein the operations of garbage collection of the first page do not include the operations of applying the pre-programming pulse.
7. The memory device of claim 1 , wherein the operations of rendering the value stored in the first page of the memory array unreadable is responsive to receiving a command to modify the value.
8. A method comprising:
at a memory controller of a NAND memory device, performing operations comprising:
rendering a value stored in a first page of a memory array of the memory device unreadable by applying a pre-programming pulse to memory cells of the first page without applying an erase pulse until a later garbage collection operation, the pre-programming pulse changing a voltage level of each of the memory cells of the first page to a same level.
9. The method of claim 8 , wherein the method further comprises:
prior the operations of rendering the value stored in the first page unreadable, receiving an indication from a host device that the first page is to be rendered unreadable.
10. The method of claim 9 , wherein the indication from the host device comprises receiving a command from the host device identifying the first page as containing sensitive data.
11. The method of claim 10 , wherein the command is a write command.
12. The method of claim 8 , wherein the method further comprises:
subsequent to the rendering the value stored in the first page unreadable, garbage collecting the first page, the garbage collecting applying the erase pulse to the first page.
13. The method of claim 12 , wherein garbage collection of the first page does not include applying the pre-programming pulse.
14. The method of claim 8 , wherein the operations of rendering the value stored in the first page of the memory array unreadable is responsive to receiving a command to modify the value.
15. A non-transitory machine-readable medium, storing instructions, which when executed by a memory controller of a NAND memory device, causes the memory device to perform operations comprising:
rendering a value stored in a first page of a memory array of the memory device unreadable by applying a pre-programming pulse to memory cells of the first page without applying an erase pulse until a later garbage collection operation, the pre-programming pulse changing a voltage level of each of the memory cells of the first page to a same level.
16. The non-transitory machine-readable medium of claim 15 , wherein the operations further comprise:
prior the operations of rendering the value stored in the first page unreadable, receiving an indication from a host device that the first page is to be rendered unreadable.
17. The non-transitory machine-readable medium of claim 16 , wherein the indication from the host device comprises receiving a command from the host device identifying the first page as containing sensitive data.
18. The non-transitory machine-readable medium of claim 17 , wherein the command is a write command.
19. The non-transitory machine-readable medium of claim 15 , wherein the operations further comprise:
subsequent to the rendering the value stored in the first page unreadable, garbage collecting the first page, the garbage collecting applying the erase pulse to the first page.
20. The non-transitory machine-readable medium of claim 19 , wherein the operations of garbage collection of the first page do not include the operations of applying the pre-programming pulse.