CMP slurry composition for copper films and method of polishing copper films using the same
A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1,
1. A chemical mechanical polishing (CMP) slurry composition for copper films, the composition comprising:
a polar solvent or a non-polar solvent; and
polishing particles modified using a silicon-containing compound,
wherein the silicon-containing compound is represented by Formula 1,
wherein, in Formula 1,
R 1 , R 2 and R 3 are each independently a hydroxyl group, a substituted or unsubstituted alkoxy group, or a halogen;
R 4 is a substituted or unsubstituted bivalent organic group;
X 1 and X 2 are each independently hydrogen, —(C═O)O − M + , a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + , a substituted or unsubstituted aromatic hydrocarbon group containing at least one —(C═O)O − M + , a substituted or unsubstituted aliphatic hydrocarbon group free from —(C═O)O − M + , or a substituted or unsubstituted aromatic hydrocarbon group free from —(C═O)O − M + ,
M + is H + or a monovalent cation of an alkali metal,
at least one of X 1 and X 2 is —(C═O)O − M + , a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + , or a substituted or unsubstituted aromatic hydrocarbon group containing at least one —(C═O)O − M + .
2. The CMP slurry composition for copper films as claimed in claim 1 , wherein:
R 4 is a substituted or unsubstituted C 1 to C 10 alkylene group, and
at least one of X 1 and X 2 is a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + .
3. The CMP slurry composition for copper films as claimed in claim 1 , wherein the silicon-containing compound represented by Formula 1 includes a silicon-containing compound represented by one of Formula 1-1 to Formula 1-4:
(OC 2 H 5 ) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + ) [Formula 1-1]
(OH) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + ) [Formula 1-2]
(OCH 3 ) 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2 [Formula 1-3]
Cl 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2 , [Formula 1-4]
wherein, in Formulae 1-1 to 1-4, M + is defined the same as that of Formula 1.
4. The CMP slurry composition for copper films as claimed in claim 1 , wherein the polishing particles include silica.
5. The CMP slurry composition for copper films as claimed in claim 1 , wherein the polishing particles modified using the silicon-containing compound represented by Formula 1 are present in an amount of about 0.001 wt % to about 20 wt %, based on a total weight of the CMP slurry composition.
6. The CMP slurry composition for copper films as claimed in claim 1 , wherein the CMP slurry composition has a pH of 5 to 9.
7. The CMP slurry composition for copper films as claimed in claim 1 , further comprising a complexing agent, a corrosion inhibitor, an oxidizing agent, or a pH adjusting agent.
8. A method of polishing a copper film using the CMP slurry composition for copper films as claimed in claim 1 .
9. The method as claimed in claim 8 , wherein:
R 4 is a substituted or unsubstituted C 1 to Cm alkylene group, and
at least one of X 1 and X 2 is a substituted or unsubstituted aliphatic hydrocarbon group containing at least one —(C═O)O − M + .
10. The method as claimed in claim 8 , wherein the silicon-containing compound represented by Formula 1 includes a silicon-containing compound represented by one of Formula 1-1 to Formula 1-4:
(OC 2 H 5 ) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + ) [Formula 1-1]
(OH) 3 Si—CH 2 CH 2 CH 2 —NH(CH 2 —C(═O)O − M + ) [Formula 1-2]
(OCH 3 ) 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2 [Formula 1-3]
Cl 3 Si—CH 2 CH 2 CH 2 —N(CH 2 —C(═O)O − M + ) 2 , [Formula 1-4]
wherein Formulae 1-1 to 1-4, M + is defined the same as that of Formula 1.
11. The method as claimed in claim 8 , wherein the polishing particles include silica.
12. The method as claimed in claim 8 , wherein the polishing particles modified using the silicon-containing compound represented by Formula 1 are present in in the composition in an amount of about 0.001 wt % to about 20 wt %, based on a total weight of the CMP slurry composition.
13. The method as claimed in claim 8 , wherein the CMP slurry composition has a pH of 5 to 9.
14. The method as claimed in claim 8 , wherein the composition further includes a complexing agent, a corrosion inhibitor, an oxidizing agent, or a pH adjusting agent.